RURU50100 Data Sheet January 2000 File Number 3376.3 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <125ns This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors. • Avalanche Energy Rated Applications Formerly developmental type TA09910. • General Purpose Ordering Information Packaging PART NUMBER RURU50100 PACKAGE TO-218 BRAND • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V • Planar Construction • Switching Power Supplies • Power Switching Circuits JEDEC STYLE SINGLE LEAD TO-218 RURU50100 ANODE NOTE: When ordering, use the entire part number. Symbol CATHODE (FLANGE) K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RURU50100 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1000 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1000 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 1000 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 90oC) 50 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 100 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 500 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 150 W Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 40 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to 175 oC 1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 RURU50100 TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 50A - - 1.9 V IF = 50A, TC = 150oC - - 1.7 V VR = 1000V - - 250 µA VR = 1000V, TC = 150oC - - 1.5 mA IF = 1A, dIF/dt = 100A/µs - - 125 ns IF = 50A, dIF/dt = 100A/µs - - 200 ns ta IF = 50A, dIF/dt = 100A/µs - 110 - ns tb IF = 50A, dIF/dt = 100A/µs - 65 - ns - - 1.0 oC/W VF IR trr RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RθJC = Thermal resistance junction to case. pw = pulse width. D = duty cycle. Typical Performance Curves 1000 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 300 100 175oC 10 100oC 25oC 175oC 100 10 100oC 1.0 0.1 25oC 1 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 2 0.01 0 200 400 600 800 1000 VR, REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RURU50100 Typical Performance Curves (Continued) IF(AV), AVERAGE FORWARD CURRENT (A) 200 175 t, TIME (ns) 150 trr 125 100 ta 75 tb 50 25 0 1 10 IF, FORWARD CURRENT (A) 50 60 50 DC 40 SQ. WAVE 30 20 10 0 25 50 75 100 125 175 150 TC, CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS I = 1.4A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3