SSF7401 -30V , -2A P-Ch Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION The SSF7401 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5V. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. The SSF7401 is universally used for all commercial-industrial applications. A 3 ● C B Top View 1 1 K 2 E 2 D FEATURES ● L 3 F Small Package Outline Lower Gate Charge REF. A B C D E F MARKING CODE 7401 H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. D PACKAGE INFORMATION Package MPQ Leader Size SOT-323 3K 7 inch G S ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V -2 A -1.5 A -10 A 0.0028 °C / W PD 0.35 W RθJA 360 °C / W TJ, TSTG -55~150 °C Continuous Drain Current 3 Pulsed Drain Current TA=25°C TA=70°C 1.2 ID IDM Linear Derating Factor Power Dissipation Thermal Resistance Junction-Ambient 3 Operating Junction and Storage Temperature Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on FR4 board, t≦10sec http://www.SeCoSGmbH.com/ 18-Oct-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSF7401 -30V , -2A P-Ch Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current TJ = 25°C TJ = 70°C Drain-Source on-State Resistance Symbol Min. Typ. Max. Unit V(BR)DSS -30 - - V VGS=0, ID= -250μA VGS(th) -0.5 - -1.2 V VDS=VGS, ID= -250μA IGSS - - ±100 nA VGS= ±12V - - -1 - - -10 - - 120 - - 150 - - 190 IDSS RDS(ON) Forward Transconductance gFS - 4 Gate Resistance Rg - 12 - μA Test Conditions VDS= -30V, VGS=0 VDS= -24V, VGS=0 VGS = -10V, ID = -2A mΩ VGS = -4.5V, ID = -1.5A VGS = -2.5V, ID = -1A S VDS = -5V, ID = -1.2A Ω f=1.0MHz nC VDS= -15V, VGS= -4.5V, ID= -1A pF VDS= -15V, VGS=0, f =1MHz ns VDS= -15V, RL=15Ω, VGS= -10V, RG=3Ω Dynamic Total Gate Charge 2 Qg - 5.06 - Gate-Source Charge Qgs - 0.72 - Gate-Drain (‘‘Miller’’)Charge Qgd - 1.58 - Input Capacitance Ciss - 409 - Output Capacitance Coss - 55 - Reverse Transfer Capacitance Crss - 42 - td(on) - 6.2 - tr - 3.2 - td(off) - 41.2 - tf - 14.5 - Turn-On Time 2 Turn-Off Time Source-Drain Diode Diode Forward Voltage 2 VSD - - -1 V IS= -1A,VGS=0 Reverse Recovery Time 2 TRR - 13.2 - nS Reverse Recovery Charge Qrr - 5.4 - nC IS=-1A,VGS=0, dl/dt=100A / μS Continuous Source Current (Body Diode) IS - - -0.5 A VD= VG=0, VS= -1V Note: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300μs, duty cycle≦2%. 3. Surface mounted on FR4 board, t.≦10sec http://www.SeCoSGmbH.com/ 18-Oct-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSF7401 Elektronische Bauelemente -30V , -2A P-Ch Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 18-Oct-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSF7401 Elektronische Bauelemente -30V , -2A P-Ch Enhancement Mode MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 18-Oct-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4