BCDSEMI AP1661AP-G1

Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
General Description
Features
The AP1661A is an active power factor control IC
which is designed mainly for use as pre-converter in
electronic ballast, AC-DC adapters and off-line SMPS
applications.
·
·
·
·
The AP1661A includes an internal start-up timer for
stand-alone applications, a one-quadrant multiplier to
realize near unity power factor and a zero current
detector to ensure DCM boundary conduction operation. The totem pole output stage is capable of driving
power MOSFET with 600mA source current and
800mA sink current.
·
·
·
·
·
Designed with advanced BiCMOS process, the
AP1661A features low start-up current, low operation
current and low power dissipation. The AP1661A also
has rich protection features including over-voltage protection, input under-voltage lockout with hysteresis
and multiplier output clamp to limit maximum peak
current.
·
·
AP1661A
Comply with IEC61000-3-2 Standard
Proprietary Design for Minimum THD
Zero Current Detection Control for DCM Boundary Conduction Mode
Adjustable Output Voltage with Precise OverVoltage Protection
Ultra-low Startup Current: 30µA Typical
Low Quiescent Current: 2.5mA Typical
Precision Internal Reference Voltage: 1%
Internal Startup Timer
Disable Function for Reduced Current
Consumption
Totem Pole Output with 600mA Source Current
and 800mA Sink Current Capability
Under-voltage Lockout with 2.5V of Hysteresis
Applications
·
·
·
The AP1661A meets IEC61000-3-2 standard even at
one-quadrant load and its THD is lower than 10% at
high-end line voltage and full load.
AC-DC Adapter
Off-line SMPS
Electronic Ballast
This IC is available in SOIC-8 and DIP-8 packages.
SOIC-8
DIP-8
Figure 1. Package Types of AP1661A
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Pin Configuration
M Package
(SOIC-8)
P Package
(DIP-8)
INV
1
8
VCC
COMP
2
7
GD
GND
MULT
3
6
GND
ZCD
CS
4
5
ZCD
INV
1
8
VCC
COMP
2
7
GD
MULT
3
6
CS
4
5
Figure 2. Pin Configuration of AP1661A (Top View)
Pin Description
Pin Number
Pin Name
1
INV
Function
2
COMP
Output of the error amplifier
3
MULT
Input of the multiplier
4
CS
Inverting input of the error amplifier
Input of the current control loop comparator
5
ZCD
Zero current detection input. If it is connected to GND, the device is
disabled
6
GND
Ground. Current return for gate driver and control circuits of the IC
7
GD
8
VCC
Gate driver output
Supply voltage of gate driver and control circuits of the IC
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Functional Block Diagram
COMP
INV
MULT
2
1
3
VCC
4
Multiplier
2.5V
Voltage
Regulation
CS
Over Voltage
Detection
VCC
8
R Q
S
Internal
R1 Supply 7V
7
UVLO
R2
Driver
GD
Vref
Zero Current
Detector
2.1V
1.6V
Starter
Disable
6
5
GND
ZCD
Figure 3. Functional Block Diagram of AP1661A
Ordering Information
AP1661A
G1: Green
Circuit Type
Package
M: SOIC-8
P: DIP-8
Package
Temperature Range
SOIC-8
-40 to 85oC
DIP-8
-40 to 85oC
TR: Tape and Reel
Blank: Tube
Part Number
Marking ID
Packing Type
AP1661AM-G1
1661AM-G1
Tube
AP1661AMTR-G1
1661AM-G1
Tape & Reel
AP1661AP-G1
AP1661AP-G1
Tube
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant and green.
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Power Supply Voltage
VCC
20
V
Operating Supply Current
ICC
30
mA
Driver Output Current
IOUT
±800
mA
-0.3 to 7
V
-0.3 to 7
V
Input/Output of Error Amplifier, Input of
Multiplier
Current Sense Input
VINV, VCOMP,
VMULT
VCS
Zero Current Detector Input
IZCD
Thermal Resistance Junction-Ambient
RθJA
Power Dissipation and Thermal Characteristics @ TA=50oC
PTOT
Operating Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10
Seconds)
Source
-50
Sink
10
DIP-8
100
SOIC-8
150
DIP-8
1
SOIC-8
0.65
mA
oC/W
W
TJ
-40 to150
oC
TSTG
-65 to 150
oC
TLEAD
260
o
C
ESD (Human Body Model)
3000
V
ESD (Machine Model)
300
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Electrical Characteristics
VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
11.7
12.5
13.3
V
9.5
10
10.5
V
2.2
2.5
2.8
V
20
V
60
µA
Under Voltage Lockout Section
Turn-on Threshold
VCC-ON
VCC rising
Turn-off Threshold
VCC-OFF
VCC falling
Hysterisis
VCC-HYS
VCC Operating Range
VCC
After turn-on
10.5
Total Supply Section
Start-up Current
Operating Supply Current
ISTART-UP
ICC
Quiescent Current
IQ
Quiescent Current
IQ
VCC Zener Voltage
VZ
VCC=11.7V before turn-on
30
CL=1nF @frequency=70kHz
3.5
5
In OVP condition Vpin1=2.7V
1.4
2.1
2.5
3.75
mA
Vpin5≤150mV, VCC>VCC-OFF
mA
1.4
2.1
mA
Vpin5≤150mV, VCC<VCC-OFF
20
50
90
µA
ICC=20mA
20
22
24
V
2.465
2.5
2.535
Error Amplifier Section
Voltage Feedback Input
Threshold
VINV
Line Regulation
TA=25oC
10.3V<VCC<20V
VCC=10.3V to 20V
Input Bias Current
IINV
VINV=0V
Voltage Gain
GV
Open Loop
Gain Bandwidth
GB
Output
Voltage
Output
Current
2.44
60
V
2.56
2
5
mV
-0.1
-1
µA
80
dB
1
MHz
Upper Clamp
Voltage
VCOMP-H
ISOURCE=0.5mA
5.8
Lower Clamp
Voltage
VCOMP-L
ISINK=0.5mA
2.25
Source Current
ICOMP-H
VCOMP=4V, VINV=2.4V
-2
-4
Sink Current
ICOMP-L
VCOMP=4V, VINV=2.6V
2.5
4.5
VINV-TH
400
500
VMULT
0 to 3
0 to 3.5
V
Enable Threshold
-8
600
mA
mV
Multiplier Section
Linear Input Voltage Range
Output Maximum Slope
Gain
∆VCS/
∆VMULT
k
VMULT: 0 to 0.5V,
VCOMP=Upper Clamp Voltage
VMULT=1V, VCOMP=4V
Jul. 2009 Rev. 1. 0
V
1.7
0.45
0.6
0.75
1/V
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Electrical Characteristics (Continued)
VCC=14.5V, TA=-25oC to 125oC, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
-0.05
-1.0
µA
Current Sense Section
Input Bias Current
ICS
Current Sense Offset Voltage
VCS-OFFSET
Current Sense Reference
Clamp
VCS-CLAMP
Delay to Output
VCS =0V
VMULT=0V
30
VMULT=2.5V
5
VCOMP=Upper Clamp Voltage,
VMULT=2.5V
1.5
td(H-L)
1.6
mV
1.7
V
175
ns
2.1
V
Zero Current Detection Section
Input Threshold Voltage,
VZCD Rising Edge
Hysteresis Voltage
Upper Clamp Voltage
VZCD-R
(Note 2)
VZCD-RTH
(Note 2)
0.3
0.5
0.7
IZCD=20µA
4.5
5.1
5.9
IZCD=3mA
4.7
5.2
6.1
IZCD=-3mA
0.3
0.65
VZCD-H
V
V
Lower Clamp Voltage
VZCD-L
1
V
Source Current Capability
IZCD-SR
-3
-10
mA
Sink Current Capability
IZCD-SN
3
10
mA
250
mV
Sink Bias Current
IZCD-B
Disable Threshold
VZCD-DIS
Disable Hysterisis
VZCD-HYS
Restart Current After
Disable
IZCD-RES
1V≤VZCD≤4.5 V
µA
2
150
200
100
VZCD<VDIS; VCC>VCC-OFF
-100
-200
mV
-300
µA
Drive Output Section
Dropout Voltage
VOH
VOL
IGD-SOURCE=200mA, VCC=12V
2.5
3
IGD-SOURCE=20mA, VCC=12V
2
2.6
IGD-SINK=200mA, VCC=12V
0.9
1.9
V
V
Output Voltage Rise Time
tR
CL=1nF
40
100
ns
Output Voltage Fall Time
tF
CL=1nF
40
100
ns
13
15
V
1.1
V
Output Clamp Voltage
UVLO Saturation
VO-CLAMP
VOS
IGD-SOURCE=5mA, VCC=20V
10
VCC=0 to VCC-ON, ISINK=10mA
Output Over Voltage Section
OVP Triggering Current
Static OVP Threshold
IOVP
35
40
45
µA
VOVP_TH
2.1
2.25
2.4
V
tSTART
70
150
400
µs
Restart Timer
Restart Timer
Note 2: Limits over the full temperature are guaranteed by design, but not tested in production.
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
40
2.55
38
2.54
Feedback Input Threshold (V)
OVP Current Threshold (µA)
Typical Performance Characteristics
36
34
32
30
28
26
24
2.52
2.51
2.50
2.49
2.48
2.47
2.46
22
20
-40
2.53
2.45
-20
0
20
40
60
80
100
120
-40
140
-20
0
20
60
80
100
120
140
Temperature ( C)
Figure 4. OVP Current Threshold vs. Temperature
Figure 5. Feedback Input Threshold vs. Temperature
13.0
42
40
VCC ON
12.5
UVLO Threshold (V)
38
Startup Current (µA)
40
o
o
Temperature ( C)
36
34
32
30
12.0
11.5
11.0
VCC OFF
10.5
28
26
10.0
24
9.5
-40
22
-40
-20
0
20
40
60
80
100
120
140
Figure 6. Startup Current vs. Temperature
-20
0
20
40
60
80
100
120
140
o
o
Temperature ( C)
Temperature ( C)
Figure 7. Under Voltage Lockout Threshold vs. Temperature
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Typical Performance Characteristics (Continued)
-0.5
4.5
Output Saturation Voltage (V)
Output Saturation Voltage (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-1.0
-1.5
-2.0
-2.5
-3.0
0.5
-3.5
0.0
0
100
200
300
400
0
500
5
3
VCS (V)
Supply Current (mA)
4
2
1
0
10
15
300
400
500
Figure 9. Output Saturation Voltage vs. Source Current
Figure 8. Output Saturation Voltage vs. Sink Current
5
200
Source Current (mA)
Sink Current (mA)
0
100
20
25
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2
VCOMP=2.6V
VCOMP=2.8V
VCOMP=3.0V
VCOMP=3.2V
VCOMP=3.5V
VCOMP=4V
VCOMP=4.5V
VCOMP=5V
VCOMP=MAX
VMULT (V)
Supply Voltage (V)
Figure 11. Multiplier Characteristics Family
Figure 10. Supply Current vs. Supply Voltage
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Mechanical Dimensions
DIP-8
Unit: mm(inch)
0.700(0.028)
7.620(0.300)TYP
1.524(0.060) TYP
6°
5°
6°
3.200(0.126)
3.600(0.142)
3.710(0.146)
4.310(0.170) 4°
4°
0.510(0.020)MIN
3.000(0.118)
3.600(0.142)
0.204(0.008)
0.360(0.014)
8.200(0.323)
9.400(0.370)
0.254(0.010)TYP
2.540(0.100) TYP
0.360(0.014)
0.560(0.022)
0.130(0.005)MIN
6.200(0.244)
6.600(0.260)
R0.750(0.030)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
9.000(0.354)
9.400(0.370)
Note: Eject hole, oriented hole and mold mark is optional.
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
HIGH PERFORMANCE POWER FACTOR CORRECTOR
AP1661A
Mechanical Dimensions (Continued)
SOIC-8
4.700(0.185)
5.100(0.201)
7°
Unit: mm(inch)
0.320(0.013)
1.350(0.053)
1.750(0.069)
8°
8°
7°
0.675(0.027)
0.725(0.029)
D
5.800(0.228)
1.270(0.050)
6.200(0.244)
TYP
D
20:1
0.800(0.031)
0.300(0.012)
R0.150(0.006)
0.100(0.004)
0.200(0.008)
0°
8°
1.000(0.039)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.190(0.007)
0.250(0.010)
1°
5°
0.510(0.020)
0.900(0.035)
R0.150(0.006)
0.450(0.017)
0.800(0.031)
Note: Eject hole, oriented hole and mold mark is optional.
Jul. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
10
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
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