AVF150 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG (B) DESCRIPTION: A .100 X 45° The ASI AVF150 is a high power Class C transistor, Designed forIFF/DME/TACAN Applications in 960-1215 MHz. ØD .088 x 45° CHAMFER C B FEATURES: E F • Internal Input/Output Matching Networks • PG = 8.2 dB at 150 W/1150 MHz • Omnigold™ Metalization System • 30:1 load VSWR capability G H I MAXIMUM RATINGS IC VCC J K DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 D .120 / 3.05 .140 / 3.56 11 A E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 55 V G PDISS 400 W @ TC = 25 °C TJ -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 0.6 °C/W .285 / 7.24 H .003 / 0.08 I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 ORDER CODE: ASI10570 TC = 25 °C NONETEST CONDITIONS SYMBOL .007 / 0.18 .210 / 5.33 K CHARACTERISTICS .255 / 6.48 MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 10 mA 65 V BVCES IC = 25 mA 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V IC = 300 mA POUT = 150 W 5.0 f = 1025 - 1150 MHz 8.5 40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10.5 mA 120 --dB % REV. C 1/1