BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number BCM856BS Package Package configuration NXP JEITA SOT363 SC-88 very small SOT457 SC-74 small BCM856BS/DG BCM856DS BCM856DS/DG 1.2 Features n n n n Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors AEC-Q101 qualified 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Per transistor VCEO collector-emitter voltage IC collector current hFE DC current gain open base VCE = −5 V; IC = −2 mA - - −65 V - - −100 mA 200 290 450 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions hFE1/hFE2 hFE matching VCE = −5 V; IC = −2 mA VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA Min Typ Max [1] 0.9 1 - [2] - - 2 Unit Per device [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. mV 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 TR2 TR1 1 2 3 1 2 3 001aab555 sym018 3. Ordering information Table 4. Ordering information Type number BCM856BS Package Name Description Version SC-88 plastic surface-mounted package; 6 leads SOT363 SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 BCM856BS/DG BCM856DS BCM856DS/DG BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 2 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 4. Marking Table 5. Marking codes Type number Marking code[1] BCM856BS *BS BCM856BS/DG PB* BCM856DS DS BCM856DS/DG R9 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −65 V VEBO emitter-base voltage open collector - −5 V IC collector current - −100 mA ICM peak collector current single pulse; tp ≤ 1 ms - −200 mA Ptot total power dissipation Tamb ≤ 25 °C BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - 200 mW BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - 250 mW BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - 300 mW BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - 380 mW Per device total power dissipation Ptot Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BCM856BS_BCM856DS_1 Product data sheet Tamb ≤ 25 °C © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 3 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor Rth(j-a) thermal resistance from junction to ambient in free air BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - - 625 K/W BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - - 500 K/W BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - - 416 K/W BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - - 328 K/W Per device Rth(j-a) [1] thermal resistance from junction to ambient in free air Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCB = −30 V; IE = 0 A - - −15 nA VCB = −30 V; IE = 0 A; Tj = 150 °C - - −5 µA nA Per transistor ICBO collector-base cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 hFE DC current gain VCE = −5 V; IC = −10 µA - 250 - VCE = −5 V; IC = −2 mA 200 290 450 IC = −10 mA; IB = −0.5 mA - −50 −200 mV IC = −100 mA; IB = −5 mA - −200 −400 mV VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA [1] - −760 - mV IC = −100 mA; IB = −5 mA [1] - −920 - mV BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 4 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol VBE Parameter Conditions Min Typ Max Unit VCE = −5 V; IC = −2 mA [2] base-emitter voltage −600 −650 −700 mV VCE = −5 V; IC = −10 mA [2] - - −760 mV Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - - 2.2 pF Ce emitter capacitance VEB = −0.5 V; IC = ic = 0 A; f = 1 MHz - 10 - pF fT transition frequency VCE = −5 V; IC = −10 mA; f = 100 MHz 100 175 - MHz NF noise figure VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 kHz - 1.6 - dB VCE = −5 V; IC = −0.2 mA; RS = 2 kΩ; f = 1 kHz; B = 200 Hz - 3.1 - dB Per device hFE matching VCE = −5 V; IC = −2 mA [3] 0.9 1 - VBE1−VBE2 VBE matching VCE = −5 V; IC = −2 mA [4] - - 2 hFE1/hFE2 [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. BCM856BS_BCM856DS_1 Product data sheet mV © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 5 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 006aaa540 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) −0.16 −0.12 006aaa541 600 hFE (1) 400 −1.0 (2) −0.75 −0.08 −0.5 200 (3) −0.25 −0.04 0 0 −2 −4 −6 0 −10−2 −8 −10 VCE (V) Tamb = 25 °C −10−1 −1 −10 −102 −103 IC (mA) VCE = −5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 1. Collector current as a function of collector-emitter voltage; typical values 006aaa542 −1.3 VBEsat (V) −1.1 Fig 2. DC current gain as a function of collector current; typical values 006aaa543 −10 VCEsat (V) −0.9 −1 (1) −0.7 (2) (3) −10−1 −0.5 (1) (2) (3) −0.3 −0.1 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 IC (mA) IC/IB = 20 IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Base-emitter saturation voltage as a function of collector current; typical values Fig 4. −103 Collector-emitter saturation voltage as a function of collector current; typical values BCM856BS_BCM856DS_1 Product data sheet −102 IC (mA) (2) Tamb = 25 °C Fig 3. −10 © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 6 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 006aaa544 −1 VBE (V) 006aaa545 103 fT (MHz) −0.8 102 −0.6 −0.4 −10−1 −1 −10 −102 10 −103 −1 IC (mA) VCE = −5 V; Tamb = 25 °C Fig 5. −102 −10 IC (mA) VCE = −5 V; Tamb = 25 °C Base-emitter voltage as a function of collector current; typical values Fig 6. 006aaa546 8 Transition frequency as a function of collector current; typical values 006aaa547 15 Ce (pF) 13 Cc (pF) 6 11 4 9 2 7 0 0 −2 −4 −6 5 −8 −10 VCB (V) 0 −6 f = 1 MHz; Tamb = 25 °C Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values BCM856BS_BCM856DS_1 Product data sheet −4 VEB (V) f = 1 MHz; Tamb = 25 °C Fig 7. −2 © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 7 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 8. Application information V− VCC OUT2 OUT1 IN1 R1 TR1 IN2 TR2 l out TR1 TR2 V+ 006aaa524 Fig 9. 006aaa526 Current mirror Fig 10. Differential amplifier 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 3.1 2.7 0.45 0.15 4 6 3.0 2.5 pin 1 index 1 2 3 0.25 0.10 Fig 11. Package outline SOT363 (SC-88) 2 3 0.6 0.2 0.26 0.10 1.9 06-03-16 Dimensions in mm 04-11-08 Fig 12. Package outline SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet 4 0.40 0.25 0.95 1.3 Dimensions in mm 5 pin 1 index 1 0.3 0.2 0.65 1.7 1.3 1.1 0.9 © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 8 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 11. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number BCM856BS Package Description SOT363 BCM856BS/DG SOT363 BCM856DS SOT457 BCM856DS/DG SOT457 Packing quantity 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 15. [2] T1: normal taping [3] T2: reverse taping 12. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig 13. Reflow soldering footprint SOT363 (SC-88) BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 9 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 14. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig 15. Reflow soldering footprint SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 10 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 5.3 1.5 (4×) solder lands 1.475 0.45 (2×) 5.05 solder resist occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig 16. Wave soldering footprint SOT457 (SC-74) BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 11 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 13. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM856BS_BCM856DS_1 20080807 Product data sheet - - BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 12 of 14 BCM856BS; BCM856DS NXP Semiconductors PNP/PNP matched double transistors 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCM856BS_BCM856DS_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 7 August 2008 13 of 14 NXP Semiconductors BCM856BS; BCM856DS PNP/PNP matched double transistors 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 August 2008 Document identifier: BCM856BS_BCM856DS_1