BGX400 Silicon Switching Diodes 3 Switching applications High breakdown voltage Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage VRM 400 Forward current IF 250 Surge forward current, t = 1 ms IFS 2 Total power dissipation, TS = 71 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V mA A -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 315 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BGX400 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 400 - - IF = 1 A - - 1.6 IF = 2 A - - 2 IR - - 1 IR - - 50 CD - 10 - pF trr - 1 - µs DC characteristics Breakdown voltage V(BR) V I(BR) = 100 µA Forward voltage VF Reverse current µA VR = 400 V Reverse current VR = 400 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00022 Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF 2 Aug-20-2001 BGX400 Forward current IF = f (VF ) Reverse current IR = f (TA) TA = 25°C 10 1 ΙF BAW 78A...D EHB00095 A ΙR 10 5 nA BAW 78A...D EHB00097 max 10 4 10 0 5 typ. 10 3 10 -1 5 10 2 10 -2 5 10 -3 0 1 V 10 1 2 0 50 100 ˚C 150 TA VF Forward current IF = f (TS) 300 mA 240 IF 210 180 150 120 90 60 30 0 0 20 40 60 80 100 120 °C 150 TS 3 Aug-20-2001 BGX400 Permissible Pulse Load RthJS = f(tp ) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 IFmax / IFDC K/W RthJS 10 2 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Aug-20-2001