PD - 94394
IRL2203NS
IRL2203NL
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 30V
RDS(on) = 7.0mΩ
G
ID = 116A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
A
W
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)
Typ.
Max.
Units
–––
–––
0.85
40
°C/W
1
02/18/02
IRL2203NS/IRL2203NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
–––
–––
–––
V(BR)DSS
IGSS
Typ.
–––
0.029
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
160
23
66
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
7.0
VGS = 10V, ID = 60A
mΩ
10
VGS = 4.5V, ID = 48A
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 60A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 125°C
100
VGS = 16V
nA
-100
VGS = -16V
60
ID = 60A
14
nC
VDS = 24V
33
VGS = 4.5V, See Fig. 6 and 13
–––
VDD = 15V
–––
ID = 60A
–––
RG = 1.8Ω
–––
VGS = 4.5V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3290 –––
VGS = 0V
1270 –––
VDS = 25V
170 –––
pF
ƒ = 1.0MHz, See Fig. 5
1320
290 mJ IAS = 60A, L = 0.16mH
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 116
showing the
A
G
integral reverse
––– ––– 400
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 60A, VGS = 0V
––– 56
84
ns
TJ = 25°C, IF = 60A
––– 110 170
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 0.16mH RG = 25Ω,
IAS = 60A, VGS=10V (See Figure 12)
ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994.
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IRL2203NS/IRL2203NL
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
100
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
2.7V
20µs PULSE WIDTH
T = 25 C
°
J
1
0.1
1
10
2.7V
10
100
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
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7.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
3.0
1
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
°
J
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
10
2.0
20µs PULSE WIDTH
T = 175 C
1
0.1
ID = 100A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL2203NS/IRL2203NL
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
5000
4000
Ciss
3000
C
oss
2000
1000
15
VGS , Gate-to-Source Voltage (V)
6000
ID = 60A
VDS = 24V
VDS = 15V
12
9
6
3
Crss
0
1
10
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
20
VDS , Drain-to-Source Voltage (V)
1000
80
10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
ID , Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
Q G , Total Gate Charge (nC)
2.4
100
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL2203NS/IRL2203NL
120
LIMITED BY PACKAGE
VDS
I D , Drain Current (A)
100
VGS
RD
D.U.T.
RG
+
-VDD
80
VGS
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
Fig 10a. Switching Time Test Circuit
20
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRL2203NS/IRL2203NL
L
VD S
D .U .T
RG
IA S
2V0GS
V
tp
D R IV E R
+
- VD D
A
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
EAS , Single Pulse Avalanche Energy (mJ)
600
1 5V
ID
24A
42A
60A
TOP
500
BOTTOM
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRL2203NS/IRL2203NL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRL2203NS/IRL2203NL
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
8.89 (.3 50 )
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
8
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
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IRL2203NS/IRL2203NL
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE:
THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
www.irf.com
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
9
IRL2203NS/IRL2203NL
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.1 0 (.16 1 )
3.9 0 (.15 3 )
F EE D D IRE C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.60 (.45 7)
1 1.40 (.44 9)
0 .3 68 (.0 14 5)
0 .3 42 (.0 13 5)
1 5.42 (.6 09)
1 5.22 (.6 01)
24.30 (.95 7)
23.90 (.94 1)
TR L
10.90 (.42 9)
10.70 (.42 1)
1 .7 5 (.069 )
1 .2 5 (.049 )
4.7 2 (.13 6)
4.5 2 (.17 8)
1 6.10 (.6 34 )
1 5.90 (.6 26 )
F E ED D IRE C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
NO TES :
1. CO MF OR MS TO EIA-418.
2. CO NT RO LLING D IM EN SIO N: M ILLIM ETER .
3. DIM ENS ION M EASUR ED @ HU B.
4. INC LUD ES F LANG E DIST ORT IO N @ O UT ER EDG E.
60.00 (2.362)
M IN.
30.40 (1.197)
MA X.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/02
10
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