LT5516 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ The LT ®5516 is an 800MHz to 1.5GHz direct conversion quadrature demodulator optimized for high linearity receiver applications. It is suitable for communications receivers where an RF or IF signal is directly converted into I and Q baseband signals with bandwidth up to 260MHz. The LT5516 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, high frequency quadrature generator. Frequency Range: 800MHz to 1.5GHz High IIP3: 21.5dBm at 900MHz High IIP2: 52dBm Noise Figure: 12.8dB at 900MHz Conversion Gain: 4.3dB at 900MHz I/Q Gain Mismatch: 0.2dB Shutdown Mode 16-Lead QFN 4mm × 4mm Package with Exposed Pad In an RF receiver, the high linearity of the LT5516 provides excellent spur-free dynamic range, even with fixed gain front end amplification. This direct conversion receiver can eliminate the need for intermediate frequency (IF) signal processing, as well as the corresponding requirements for image filtering and IF filtering. Channel filtering can be performed directly at the outputs of the I and Q channels. These outputs can interface directly to channelselect filters (LPFs) or to a baseband amplifier. U APPLICATIO S ■ ■ ■ Cellular/PCS/UMTS Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO I/Q Output Power, IM3 vs RF Input Power 5V BPF LNA VCC RF + LT5516 IOUT+ 20 LPF VGA 0° RF – 0 IOUT– DSP LO INPUT LO + + QOUT 0°/90° LO – ENABLE LPF VGA 90° QOUT– EN Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure POUT, IM3 (dBm/TONE) BPF POUT –20 –40 IM3 –60 –80 5516 F01 –100 –18 –14 VCC = 5v TA = 25°C PLO = –10dBm fLO = 901MHz fRF1 = 899.9MHz fRF2 = 900.1MHz –10 –6 –2 RF INPUT POWER (dBm) 2 6 5516 TA01 5516f 1 LT5516 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART NUMBER QOUT – QOUT + IOUT + IOUT – TOP VIEW Power Supply Voltage ............................................ 5.5V Enable Voltage ...................................................... 0, VCC LO + to LO – Differential Voltage ............................... ±2V (+10dBm Equivalent) + – RF to RF Differential Voltage ................................ ±2V (+10dBm Equivalent) Operating Ambient Temperature ..............–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Maximum Junction Temperature .......................... 125°C 16 15 14 13 GND 1 RF + RF – LT5516EUF 12 VCC LO – 2 11 3 10 LO + GND 4 6 7 8 VCC VCM EN VCC 9 5 VCC UF PART MARKING UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN 5516 EXPOSED PAD IS GROUND (MUST BE SOLDERED TO PCB) TJMAX = 125°C, θJA = 38°C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. AC ELECTRICAL CHARACTERISTICS TA = 25°C. VCC = 5V, EN = high, fRF1 = 899.9MHz, fRF2 = 900.1MHz, fLO = 901MHz, PLO = –10dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2) PARAMETER CONDITIONS MIN Frequency Range LO Power Conversion Gain Voltage Gain, Load Impedance = 1k Conversion Gain Variation vs Temperature – 40°C to 85°C Noise Figure 2 TYP MAX UNITS 0.8 to 1.5 GHz –13 to – 2 dBm 4.3 dB 0.01 dB/°C R1 = 8.2Ω R1 = 3.3Ω, PLO = –5dBm 11.4 12.8 dB dB Input 3rd Order Intercept 2-Tone, –10dBm/Tone, ∆f = 200kHz R1 = 8.2Ω R1 = 3.3Ω, PLO = –5dBm 17.0 21.5 dBm dBm Input 2nd Order Intercept Input = –10dBm R1 = 8.2Ω R1 = 3.3Ω, PLO = –5dBm 46.0 52.0 dBm dBm Input 1dB Compression R1 = 8.2Ω 6.6 dBm 260 MHz Baseband Bandwidth I/Q Gain Mismatch (Note 4) I/Q Phase Mismatch (Note 4) Output Impedance Differential 0.2 1 0.7 dB degree 120 Ω LO to RF Leakage – 65 dBm RF to LO Isolation 57 dB 5516f 2 LT5516 DC ELECTRICAL CHARACTERISTICS PARAMETER TA = 25°C. VCC = 5V unless otherwise noted. CONDITIONS Supply Voltage TYP 4 Supply Current Shutdown Current MIN 80 117 EN = Low Turn-On Time Turn-Off Time EN = High (On) MAX UNITS 5.25 V 150 mA 20 µA 120 ns 650 ns 1.6 V EN = Low (Off) EN Input Current VENABLE = 5V 2 Output DC Offset Voltage (IOUT+ – IOUT–, QOUT+ – QOUT–) fLO = 901MHz, PLO = –10dBm 1 Output DC Offset Variation vs Temperature – 40°C to 85°C 20 1.3 V 25 mV µA µV/°C Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Tests are performed as shown in the configuration of Figure 2 with R1 = 8.2Ω, unless otherwise noted. Note 3: Specifications over the – 40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process control. Note 4: Measured at PRF = –10dBm and output frequency = 1MHz. 5516f 3 LT5516 U W TYPICAL PERFOR A CE CHARACTERISTICS (Test circuit optimized for 900MHz operation as shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency Supply Current vs Supply Voltage 25 R1 = 8.2Ω 140 TA = 85°C 120 TA = 25°C 100 TA = – 40°C GAIN (dB), NF (dB), IIP3 (dBm) SUPPLY CURRENT (mA) 160 80 60 20 IIP3 15 NF 10 5 40 4 4.5 5 SUPPLY VOLTAGE (V) PLO = –10dBm TA = 25°C VCC = 5V R1 = 8.2Ω CONV. GAIN 0 800 5.5 900 1000 1100 1200 RF INPUT FREQUENCY (MHz) 5516 G01 5516 G02 I/Q Output Power, IM3 vs RF Input Power IIP2 vs RF Input Frequency IIP2 (dBm) 60 20 PLO = –10dBm TA = 25°C VCC = 5V R1 = 8.2Ω 0 POUT, IM3 (dBm/TONE) 70 50 40 fLO = 901MHz VCC = 5V R1 = 8.2Ω OUTPUT POWER –20 IM3 –40 TA = – 40°C –60 TA = 85°C 30 20 800 1300 TA = 25°C –80 900 1000 1100 1200 RF INPUT FREQUENCY (MHz) –100 –18 1300 5516 G03 –14 –10 –6 –2 RF INPUT POWER (dBm) 2 6 5516 G04 I/Q Gain Mismatch vs RF Input Frequency 1.2 GAIN MISMATCH (dB) 0.8 TA = – 40°C 0.4 0 TA = 85°C TA = 25°C –0.4 –0.8 PLO = –10dBm fBB = 1MHz VCC = 5V R1 = 8.2Ω –1.2 800 900 1000 1100 1200 1300 1400 1500 RF INPUT FREQUENCY (MHz) 5516 G05 5516f 4 LT5516 U W TYPICAL PERFOR A CE CHARACTERISTICS (Test circuit optimized for 900MHz operation as shown in Figure 2) I/Q Phase Mismatch vs RF Input Frequency NF vs LO Input Power 6 18 16 fRF = 1300MHz 14 fRF = 1100MHz 12 fRF = 900MHz TA = – 40°C 2 0 NF (dB) PHASE MISMATCH (DEG) 4 TA = 25°C 10 TA = 85°C –2 8 –4 PLO = –10dBm fBB = 1MHz VCC = 5V R1 = 8.2Ω –6 800 TA = 25°C VCC = 5V R1 = 8.2Ω 6 4 –14 900 1000 1100 1200 1300 1400 1500 RF INPUT FREQUENCY (MHz) –12 –10 –8 –6 –4 LO INPUT POWER (dBm) 5516 G07 5516 G06 Conv Gain, IIP3 vs LO Input Power 20 IIP2 vs LO Input Power 70 TA = 85°C TA = – 40°C IIP3 8 TA = 85°C IIP2 (dBm) 12 fLO = 901MHz VCC = 5V R1 = 8.2Ω CONV GAIN TA = 25°C 55 50 TA = – 40°C 45 TA = 25°C TA = – 40°C 40 4 0 –14 fLO = 901MHz VCC = 5V R1 = 8.2Ω 60 TA = 25°C TA = 85°C –12 35 –10 –8 –6 –4 LO INPUT POWER (dBm) 30 –14 –2 5516 G08 –12 –10 –8 –6 –4 LO INPUT POWER (dBm) –2 5516 G09 Conv Gain, IIP3 vs Supply Voltage 20 TA = 85°C CONV GAIN (dB), IIP3 (dBm) CONV GAIN (dB), IIP3 (dBm) 65 16 –2 16 TA = – 40°C IIP3 12 TA = 25°C fLO = 901MHz PLO = –10dBm R1 = 8.2Ω 8 CONV GAIN TA = 25°C TA = – 40°C 4 TA = 85°C 0 4 4.5 5 SUPPLY VOLTAGE (V) 5.5 5516 G10 5516f 5 LT5516 U W TYPICAL PERFOR A CE CHARACTERISTICS (Test circuit optimized for 900MHz operation as shown in Figure 2) LO-RF Leakage vs LO Input Power –55 TA = 25°C VCC = 5V R1 = 8.2Ω fRF = 1100MHz 70 RF-LO ISOLATION (dB) –60 LO-RF LEAKAGE (dBm) RF-LO Isolation vs RF Input Power 80 fRF = 900MHz –65 fRF = 1300MHz –70 fRF = 1100MHz –75 fRF = 1300MHz 60 fRF = 900MHz 50 40 TA = 25°C VCC = 5V R1 = 8.2Ω 30 –80 –14 –12 –10 –8 –6 –4 LO INPUT POWER (dBm) 20 –15 –2 –10 –5 0 5 RF INPUT POWER (dBm) 10 5516 G12 5516 G11 RF, LO Port Return Loss vs Frequency Conv Gain vs Baseband Frequency 0 8 RF RETURN LOSS (dB) –5 6 CONV GAIN (dB) –10 LO –15 –20 –25 TA = 25°C VCC = 5V R1 = 8.2Ω –30 0 0.5 TA = – 40°C 4 TA = 85°C 2 TA = 25°C 0 fLO = 1000MHz VCC = 5V R1 = 8.2Ω –2 1 1.5 FREQUENCY (GHz) 2 –4 2.5 0.1 1 10 100 BASEBAND FREQUENCY (MHz) 1000 5516 G13 5516 G14 Conv Gain, NF, IIP3 vs R1 TA = 25°C VCC = 5V Supply Current, IIP2 vs R1 150 PLO = –5dBm fLO = 901MHz SUPPLY CURRENT (mA), IIP2 (dBm) GAIN (dB), NF (dB), IIP3 (dBm) 25 20 IIP3 15 NF 10 CONV GAIN 5 0 130 SUPPLY CURRENT 110 90 70 IIP2 50 30 3 4 5 6 R1 (Ω) 7 8 9 5516 G15 PLO = –5dBm fLO = 901MHz TA = 25°C VCC = 5V 3 4 5 6 R1 (Ω) 7 8 9 5516 G16 5516f 6 LT5516 U U U PI FU CTIO S GND (Pins 1, 4): Ground Pin. RF +, RF – (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 1.54V. They must be driven with a differential signal. An external matching network is required for impedance transformation. VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1µF capacitors. VCM (Pin 6): Common Mode and DC Return for the I-Mixer and Q-Mixer. An external resistor must be connected between this pin and ground to set the dc bias current of the I/Q demodulator. EN (Pin 7): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. LO +, LO – (Pins 10, 11): Differential Local Oscillator Input Pins. These pins are internally biased to 2.44V. They can be driven single-ended by connecting one to an AC ground through a 1000pF capacitor. However, differential input drive is recommended to minimize LO feedthrough to the RF input pins. QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC –0.68V for each pin. IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC –0.68V for each pin. GROUND (Pin 17, Backside Contact): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane. W BLOCK DIAGRA VCC VCC VCC VCC 5 8 9 12 I-MIXER LPF 16 IOUT+ 15 IOUT– RF AMP RF + 2 LO BUFFERS 0°/90° RF – 3 LPF 14 QOUT+ VCM 6 13 QOUT– Q-MIXER BIAS 7 EN 1 4 GND GND 17 10 11 LO + LO – 5516 BD 5516f 7 LT5516 TEST CIRCUITS J3 J5 IOUT– QOUT+ J4 J6 RF GND L1 33nH 4 RF + RF LO – L4 27nH LO + VCC C5 1nF VCC EN GND C1 1nF LO VCC LT5516 – VCM 3 6 1 VCC 2 T2 LDB31900M20C-416 J2 QOUT – IOUT + T1 J1 LDB31900M20C-416 IOUT – QOUT– QOUT + IOUT+ 6 1 2 4 3 C2 1nF VCC R3 1k EN C7 1nF REFERENCE DESIGNATION C1,C2,C5,C6,C7 C3 C4 L1 L4 R1 R2 R3 T1, T2 R1 8.2Ω VALUE 1nF 0.1µF 2.2µF 33nH 27nH 8.2Ω 100k 1k 1:4 R2 100k SIZE 0402 0402 3216 0402 0402 0402 0402 0402 C6 1nF C3 0.1µF C4 2.2µF PART NUMBER AVX 04025C102JAT AVX 0402ZD104KAT AVX TPSA225M010R1800 Murata LQP10A Murata LQP10A Murata LDB31900M20C-416 5516 F02 Figure 2. 900MHz Evaluation Circuit Schematic Figure 3. Component Side Silkscreen of Evaluation Board Figure 4. Component Side Layout of Evaluation Board 5516f 8 LT5516 U W U U APPLICATIO S I FOR ATIO The LT5516 is a direct I/Q demodulator targeting high linearity receiver applications, including wireless infrastructure. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. The RF signal is applied to the inputs of the RF amplifier and is then demodulated into I/Q baseband signals using quadrature LO signals. The quadrature LO signals are internally generated by precision 90° phase shifters. The demodulated I/Q signals are lowpass filtered internally with a –3dB bandwidth of 265MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude; their phases are 90° apart. RF Input Port Differential drive is highly recommended for the RF inputs to minimize the LO feedthrough to the RF port and to maximize gain. (See Figure 2.) A 1:4 transformer is used on the demonstration board for wider bandwidth matching. To assure good NF and maximize the demodulator gain, a low loss transformer is employed. Shunt inductor L1, with high resonance frequency, is required for proper impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete L-C circuits to produce the required balanced waveforms at the RF + and RF – inputs.The differential impedance of the RF inputs is listed in Table 1. Table 1. RF Input Differential Impedance FREQUENCY (MHz) DIFFERENTIAL INPUT DIFFERENTIAL S11 An external resistor (R1) is connected to Pin 6 (VCM) to set the optimum DC current for I/Q mixer linearity. The IIP3 can be improved with a smaller R1 at a price of slightly higher NF and ICC. The RF performances of NF, IIP3 and IIP2 vs R1 are shown in the Typical Performance Characteristics. LO Input Port The LO inputs (Pins 10,11) should be driven differentially to minimize LO feedthrough to the RF port. This can be accomplished by means of a single-ended to differential conversion as shown in Figure 2. L4, the 27nH shunt inductor, serves to tune out the capacitive component of the LO differential input. The resonance frequency of the inductor should be greater than the operating frequency. A 1:4 transformer is used on the demo board to match the 200Ω on-chip resistance to a 50Ω source. Figure 6 shows the LO input equivalent circuit and the associated matching network. Single-ended to differential conversion at the LO inputs can also be implemented using a discrete L-C circuit to produce a balanced waveform without a transformer. An alternative solution is a simple single-ended termination. However, the LO feedthrough to RF may be degraded. Either LO + or LO – input can be terminated to a 50Ω source with a matching circuit, while the other input is connected to ground through a 100pF bypass capacitor. Table 2 shows the differential input impedance of the LO input port. IMPEDANCE (Ω) MAG ANGLE (˚) 800 258.7-j195.2 0.779 –16.9 Table 2. LO Input Differential Impedance 900 239.9-j181.8 0.766 –18.3 FREQUENCY DIFFERENTIAL INPUT DIFFERENTIAL S11 1000 224.1-j170.0 0.753 –19.6 (MHz) IMPEDANCE (Ω) MAG ANGLE (˚) 1100 210.9-j160.0 0.740 –20.9 800 134.7-j65.1 0.552 –22.5 128.5-j66.7 0.517 –25.4 1200 200.7-j152.1 0.729 –21.9 900 1300 191.4-j144.7 0.718 –23.0 1000 121.8-j67.5 0.512 –28.5 1400 183.2-j138.3 0.707 –24.0 1100 115.7-j67.2 0.505 –31.8 –24.9 1200 109.3-j66.1 0.498 –35.0 1500 176.5-j133.1 0.698 1300 103.0-j64.4 0.490 –38.3 The RF+ and RF– inputs (Pins 2, 3) are internally biased at 1400 96.7-j62.1 0.480 –42.0 2.44V. These two pins should be DC blocked when connected to ground or other matching components. The RF input equivalent circuit is shown in Figure 5. 1500 91.0-j59.4 0.469 –45.8 5516f 9 LT5516 U U W U APPLICATIO S I FOR ATIO I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60Ω resistor. The output dc bias voltage is VCC – 0.68V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120Ω in parallel with a 5pF internal capacitor, forming a lowpass filter with a –3dB corner frequency at 265MHz. RLOAD (the singleended load resistance) should be larger than 600Ω to assure full gain. The gain is reduced by 20 • log(1 + 120Ω/ RLOAD) in dB when the differential output is terminated by RLOAD. For instance, the gain is reduced by 6.85dB when each output pin is connected to a 50Ω load (100Ω differential load). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. The phase relationship between the I-channel output signal and Q-channel output signal is fixed. When the LO input frequency is larger (or smaller) than the RF input frequency, the Q-channel outputs (QOUT+, QOUT–) lead (or lag) I-channel outputs (IOUT+, IOUT–) by 90°. When AC output coupling is used, the resulting highpass filter’s –3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600Ω. Care should be taken when the demodulator’s outputs are DC coupled to the external load, to make sure that the I/Q mixers are biased properly. If the current drain from the outputs exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 13mA when the outputs are connected to an external load with a DC voltage higher than VCC – 0.68V. The I/Q output equivalent circuit is shown in Figure 7. LT5516 VCC J1 T1 LDB31900M20C-416 RF 2 2 3 6 1 RF + L1 33nH 1.54V 1k 4 3 RF – 1.54V C1 1nF 5516 F05 Figure 5. RF Input Equivalent Circuit with External Matching 5516f 10 LT5516 U U W U APPLICATIO S I FOR ATIO VCC VCC 60Ω J2 LO 10 2 3 6 1 60Ω 60Ω 60Ω IOUT+ T2 LDB31900M20C-416 LO + 2.44V L4 27nH IOUT– 5pF 200Ω 4 11 LO 16 15 + QOUT – QOUT– 2.44V C2 1nF 14 13 5pF 5516 F06 5516 F07 Figure 6. LO Input Equivalent Circuit with External Matching Figure 7. I/Q Output Equivalent Circuit U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ±0.05 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 (UF) QFN 0802 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 5516f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5516 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones LT5500 RF Front End Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer, 1.8V ≤ VSUPPLY ≤ 5.25V LT5502 400MHz Quadrature Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply LTC5505 300MHz to 3.5GHz RF Power Detector >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain LTC5507 100kHz to 1GHz RF Power Detector 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, SC70 Package LT5511 High Signal Level Up Converting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 High Signal Level Down Converting Mixer DC-3GHz, 20dBm IIP3, Integrated LO Buffer 5516f 12 Linear Technology Corporation LT/TP 0503 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2003 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.