LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator U FEATURES DESCRIPTIO ■ The LT ®5515 is a 1.5GHz to 2.5GHz direct conversion quadrature demodulator optimized for high linearity receiver applications. It is suitable for communications receivers where an RF signal is directly converted into I and Q baseband signals with bandwidth up to 260MHz. The LT5515 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, high frequency quadrature generator. ■ ■ ■ ■ ■ ■ ■ ■ Frequency Range: 1.5GHz to 2.5GHz High IIP3: 20dBm at 1.9GHz High IIP2: 51dBm at 1.9GHz Noise Figure: 16.8dB at 1.9GHz Conversion Gain: –0.7dB at 1.9GHz I/Q Gain Mismatch: 0.3dB I/Q Phase Mismatch: 1° Shutdown Mode 16-Lead QFN 4mm × 4mm Package with Exposed Pad In an RF receiver, the high linearity of the LT5515 provides excellent spur-free dynamic range, even with fixed gain front end amplification. This direct conversion receiver can eliminate the need for intermediate frequency (IF) signal processing, as well as the corresponding requirements for image filtering and IF filtering. Channel filtering can be performed directly at the outputs of the I and Q channels. These outputs can interface directly to channelselect filters (LPFs) or to a baseband amplifier. U APPLICATIO S ■ ■ ■ ■ Cellular/PCS/UMTS Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator RF Power Amplifier Linearization LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. U TYPICAL APPLICATIO I/Q Output Power, IM2, IM3 vs RF Input Power 5V BPF LNA VCC RF + LT5515 IOUT+ 20 LPF VGA 0° RF – IOUT– DSP LO INPUT LO + QOUT+ 0°/90° LO – ENABLE LPF VGA 90° QOUT – EN POUT, IM2, IM3 (dBm/TONE) BPF 0 POUT – 20 IM3 – 40 IM2 – 60 TA = 25°C PLO = –5dBm fLO = 1901MHz fRF1 = 1899.9MHz fRF2 = 1900.1MHz – 80 5515 F01 –100 –16 –12 –8 –4 0 RF INPUT POWER (dBm) 4 8 5515 • TA01 Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure 5515fa 1 LT5515 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART NUMBER QOUT – QOUT + IOUT + IOUT – TOP VIEW Power Supply Voltage ............................................ 5.5V Enable Voltage ...................................................... 0, VCC LO + to LO – Differential Voltage ............................... ±2V (+10dBm Equivalent) + – RF to RF Differential Voltage ................................ ±2V (+10dBm Equivalent) Operating Ambient Temperature ..............–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Maximum Junction Temperature .......................... 125°C 16 15 14 13 GND 1 12 VCC RF + 2 11 LO – RF – 17 3 LT5515EUF 10 LO + GND 4 6 7 8 VCC VCM EN VCC 9 5 VCC UF PART MARKING UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB TJMAX = 125°C, θJA = 38°C/W 5515 Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges. AC ELECTRICAL CHARACTERISTICS TA = 25°C. VCC = 5V, fRF1 = 1899.9MHz, fRF2 = 1900.1MHz, fLO = 1901MHz, PLO = –5dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2) PARAMETER CONDITIONS MIN TYP MAX UNITS Frequency Range 1.5 to 2.5 GHz LO Power –10 to 0 dBm Conversion Gain Voltage Gain, Load Impedance = 1k Noise Figure –3 –0.7 dB 16.8 dB Input 3rd Order Intercept 2-Tone, –10dBm/Tone, ∆f = 200kHz 20 Input 2nd Order Intercept 2-Tone, –10dBm/Tone, ∆f = 200kHz 51 dBm 9 dBm 260 MHz Input 1dB Compression Baseband Bandwidth I/Q Gain Mismatch (Note 4) 0.3 I/Q Phase Mismatch (Note 4) 1 Output Impedance Differential dBm 0.7 dB deg 120 Ω LO to RF Leakage – 46 dBm RF to LO Isolation 46 dB 5515fa 2 LT5515 DC ELECTRICAL CHARACTERISTICS PARAMETER TA = 25°C. VCC = 5V unless otherwise noted. CONDITIONS Supply Voltage TYP 4 Supply Current Shutdown Current MIN 95 125 EN = Low Turn-On Time Turn-Off Time EN = High (On) MAX UNITS 5.25 V 160 mA 20 µA 120 ns 650 ns 1.6 V EN = Low (Off) EN Input Current VENABLE = 5V 2 Output DC Offset Voltage (⏐IOUT+ – IOUT–⏐, ⏐QOUT+ – QOUT–⏐) fLO = 1901MHz, PLO = –5dBm 4 Output DC Offset Variation vs Temperature – 40°C to 85°C 30 Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Tests are performed as shown in the configuration of Figure 2 with R1 = 8.2Ω, unless otherwise noted. 1.3 V 25 mV µA µV/°C Note 3: Specifications over the – 40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process control. Note 4: Measured at PRF = –5dBm and output frequency = 1MHz. 5515fa 3 LT5515 U W TYPICAL PERFOR A CE CHARACTERISTICS (Test circuit optimized for 1.9GHz operation as shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency Supply Current vs Supply Voltage 170 IIP2 vs RF Input Frequency 25 70 PLO = –5dBm TA = 25°C VCC = 5V IIP3 GAIN (dB), NF (dB), IIP3 (dBm) TA = 85°C 130 TA = 25°C 110 TA = – 40°C 90 60 NF 15 10 IIP2 (dBm) 150 SUPPLY CURRENT (mA) 20 PLO = –5dBm TA = 25°C VCC = 5V 50 40 5 30 0 CONV GAIN –5 1.7 5.5 4.5 5.0 SUPPLY VOLTAGE (V) 1.8 2.3 2.2 1.9 2.0 2.1 RF INPUT FREQUENCY (GHz) 5515 ¥ G01 GAIN MISMATCH (dB) –20 TA = – 40°C –40 TA = 25°C –60 TA = 85°C 6 fBB = 1MHz PLO = –5dBm VCC = 5V 4 TA = 85°C 0.6 TA = 25°C TA = – 40°C 0.2 – 0.2 –80 –100 –16 –12 –8 –4 0 RF INPUT POWER (dBm) 4 8 – 0.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 RF INPUT FREQUENCY (GHz) 5515 ¥ G04 12 8 4 fRF = 1.7GHz fRF = 1.9GHz 16 TA = 25°C 14 TA = – 40°C 0 –4 4.0 5.5 5515 ¥ G07 12 –12 –10 –2 –8 –6 –4 LO INPUT POWER (dBm) IIP3 TA = 25°C 2.4 0 5515 ¥ G08 TA = 85°C TA = – 40°C 16 12 8 fLO = 1901MHz VCC = 5V 4 CONV GAIN 0 TA = 25°C VCC = 5V TA = 85°C 4.5 5.0 SUPPLY VOLTAGE (V) 2.3 2.2 1.9 2.0 2.1 RF INPUT FREQUENCY (GHz) 20 fRF = 2.1GHz 18 CONV GAIN 1.8 Conv Gain, IIP3 vs LO Input Power 24 TA = – 40°C fLO = 1901MHz PLO = –5dBm TA = – 40°C 5515 ¥ G06 NF vs LO Input Power NF (dB) CONV GAIN (dB), IIP3 (dBm) TA = 25°C 16 –2 TA = 85°C 20 TA = 25°C 0 –6 1.7 2.4 20 IIP3 TA = 85°C 2 5515 ¥ G05 Conv Gain, IIP3 vs Supply Voltage 24 fBB = 1MHz PLO = –5dBm –4 CONV GAIN (dB), IIP3 (dBm) POUT, IM3 (dBm/TONE) 1.0 2.4 I/Q Phase Mismatch vs RF Input Frequency 1.4 OUTPUT POWER IM3 2.3 1.9 2.0 2.1 2.2 RF INPUT FREQUENCY (GHz) 5515 ¥ G03 I/Q Gain Mismatch vs RF Input Frequency 20 fLO = 1901MHz VCC = 5V 1.8 5515 ¥ G02 I/Q Output Power, IM3 vs RF Input Power 0 20 1.7 2.4 PHASE MISMATCH (DEG) 70 4.0 –4 –12 TA = 25°C TA = – 40°C TA = 85°C –10 –8 –6 –4 –2 LO INPUT POWER (dBm) 0 5515 ¥ G09 5515fa 4 LT5515 U W TYPICAL PERFOR A CE CHARACTERISTICS (Test circuit optimized for 1.9GHz operation as shown in Figure 2) LO-RF Leakage vs LO Input Power IIP2 vs LO Input Power 70 –40 60 –45 TA = – 40°C 50 TA = 25°C 45 TA = 85°C 40 TA = 25°C VCC = 5V 70 RF-LO ISOLATION (dB) 55 80 TA = 25°C VCC = 5V LO-RF LEAKAGE (dBm) IIP2 (dBm) fLO = 1901MHz 65 VCC = 5V RF-LO Isolation vs RF Input Power fRF = 1.9GHz fRF = 2.2GHz –50 fRF = 1.7GHz fRF = 2.4GHz –55 60 fRF = 2.4GHz 50 fRF = 2.2GHz fRF = 1.9GHz 40 fRF = 1.7GHz 30 35 30 –10 –8 –6 –2 –4 LO INPUT POWER (dBm) –60 –12 0 –10 20 –15 0 –8 –6 –4 –2 LO INPUT POWER (dBm) –10 5515 ¥ G11 5515 ¥ G10 RF, LO Port Return Loss vs Frequency 5515 ¥ G12 Conv Gain vs Baseband Frequency Conv Gain, NF, IIP3 vs R1 2 0 25 fLO = 1901MHz PLO = –5dBm TA = 25°C VCC = 5V IIP3 CONV GAIN (dB) RF LO –15 –20 1.5 TA = 25°C TA = 85°C –2 –4 –6 –8 2.5 2.0 FREQUENCY (GHz) 3.0 fLO = 1.9GHz VCC = 5V 10 1 100 BASEBAND FREQUENCY (MHz) 0.1 1000 5515 ¥ G14 5515 ¥ G13 20 NF 15 10 5 CONV GAIN 0 –5 2 3 4 5 6 7 R1 (Ω) 8 9 10 5515 ¥ G15 Supply Current, IIP2 vs R1 150 SUPPLY CURRENT (mA), IIP2 (dBm) RETURN LOSS (dB) –10 GAIN (dB), NF (dB), IIP3 (dBm) TA = – 40°C 0 –5 10 –5 0 5 RF INPUT POWER (dBm) 130 SUPPLY CURRENT 110 fLO = 1901MHz PLO = –5dBm 90 TA = 25°C VCC = 5V 70 IIP2 50 30 2 3 4 5 6 7 R1 (Ω) 8 9 10 5515 ¥ G16 5515fa 5 LT5515 U U U PI FU CTIO S GND (Pins 1, 4): Ground Pin. RF +, RF – (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 1.54V. They must be driven with a differential signal. An external matching network is required for impedance transformation. VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1µF capacitors. VCM (Pin 6): Common Mode and DC Return for the I-Mixer and Q-Mixer. An external resistor must be connected between this pin and ground to set the DC bias current of the I/Q demodulator. EN (Pin 7): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. LO +, LO – (Pins 10, 11): Differential Local Oscillator Input Pins. These pins are internally biased to 2.44V. They can be driven single-ended by connecting one to an AC ground through a 1000pF capacitor. However, differential input drive is recommended to minimize LO feedthrough to the RF input pins. QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC –0.85V for each pin. IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC –0.85V for each pin. GROUND (Pin 17, Backside Contact): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane. W BLOCK DIAGRA VCC VCC VCC VCC 5 8 9 12 I-MIXER LPF 16 IOUT+ 15 IOUT– RF AMP RF + 2 LO BUFFERS 0°/90° RF – 3 LPF 14 QOUT+ VCM 6 13 QOUT– Q-MIXER BIAS 7 EN 1 4 GND GND 17 10 11 LO + LO – 5515 BD 5515fa 6 LT5515 TEST CIRCUITS J3 IOUT– J5 QOUT+ C18 (OPT) C21 (OPT) J4 J6 RF L1 10nH 4 RF + RF L2 (OPT) LO + GND VCC C5 1nF VCC C1 100pF LO VCC LO – LT5515 – EN C17 100pF GND VCM 3 6 1 VCC 2 T2 LDB311G9005C-300 J2 QOUT – IOUT + T1 J1 LDB311G9020C-452 QOUT– C20 (OPT) QOUT + C19 (OPT) IOUT – IOUT+ 6 1 2 4 3 C2 100pF C16 100pF VCC R3 1k EN C7 1nF REFERENCE DESIGNATION C1, C2, C16, C17 C5, C6, C7 C3 C4 L1 R1 R2 R3 T1 T2 R1 4.3Ω VALUE 100pF 1nF 0.1µF 2.2µF 10nH 4.3Ω 100k 1k 1:4 1:1 R2 100k SIZE 0402 0402 0402 3216 0402 0402 0402 0402 C6 1nF C3 0.1µF C4 2.2µF PART NUMBER AVX 04025C101JAT AVX 04025C102JAT AVX 0402ZD104KAT AVX TPSA225M010R1800 Murata LQP15M Murata LDB311G9020C-452 Murata LDB311G9005C-300 5515 F02 Figure 2. Evaluation Circuit Schematic for 1900MHz PCS/UMTS Application Figure 3. Topside of Evaluation Board Figure 4. Bottom Side of Evaluation Board 5515fa 7 LT5515 U W U U APPLICATIO S I FOR ATIO The LT5515 is a direct I/Q demodulator targeting high linearity receiver applications, including wireless infrastructure. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. The RF+ and RF– inputs (Pins 2, 3) are internally biased at 1.54V. These two pins should be DC blocked when connected to ground or other matching components. The RF input equivalent circuit is shown in Figure 5. The RF signal is applied to the inputs of the RF amplifier and is then demodulated into I/Q baseband signals using quadrature LO signals. The quadrature LO signals are internally generated by precision 90° phase shifters. The demodulated I/Q signals are lowpass filtered internally with a –3dB bandwidth of 260MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude; their phases are 90° apart. A 4.3Ω resistor (R1) is connected to Pin 6 (VCM) to set the optimum DC current for I/Q mixer linearity. The trade-off of the NF and IIP3 as a function of R1 is shown in the “Typical Performance Characteristics”. When a smaller R1 is used for better linearity, the total supply current will increase. A 5V ±5% power supply is recommended to assure high linearity performance. LO Input Port RF Input Port Differential drive is highly recommended for the RF inputs to minimize the LO feedthrough to the RF port and to maximize gain. (See Figure 2.) A 1:4 transformer is used on the demonstration board for wider bandwidth matching. To assure good NF and maximize the demodulator gain, a low loss transformer is employed. Shunt inductor L1, with high resonance frequency, is required for proper impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete L-C circuits to produce the required balanced waveforms at the RF + and RF – inputs.The differential impedance of the RF inputs is listed in Table 1. Table 1. RF Input Differential Impedance FREQUENCY (GHz) DIFFERENTIAL INPUT DIFFERENTIAL S11 IMPEDANCE (Ω) MAG ANGLE(°) 1.5 115.7-j132.7 0.698 –24.9 1.6 111.7-j128.1 0.689 –25.9 1.7 108.1-j123.7 0.681 –26.8 1.8 104.8-j120.2 0.674 –27.7 1.9 101.7-j116.9 0.667 –28.5 2.0 98.8-j113.8 0.661 –29.4 2.1 96.0-j111.1 0.655 –30.2 2.2 93.3-j108.7 0.650 –31.1 2.3 90.7-j106.2 0.645 –32.0 2.4 88.3-j104.2 0.641 –32.8 2.5 85.9-j102.2 0.637 –33.7 The LO inputs (Pins 10,11) should be driven differentially to minimize LO feedthrough to the RF port. This can be accomplished by means of a single-ended to differential conversion as shown in Figure 2. L4, the 12nH shunt inductor, serves to tune out the capacitive component of the LO differential input. The resonance frequency of the inductor should be greater than the operating frequency. A 1:2 transformer is used on the demo board to match the LO port to a 50Ω source. Figure 6 shows the LO input equivalent circuit and the associated matching network. Single-ended to differential conversion at the LO inputs can also be implemented using a discrete L-C circuit to produce a balanced waveform without a transformer. An alternative solution is a simple single-ended termination. However, the LO feedthrough to RF may be degraded. Either LO + or LO – input can be terminated to a 50Ω source with a matching circuit, while the other input is connected to ground through a 100pF bypass capacitor. 5515fa 8 LT5515 U U W U APPLICATIO S I FOR ATIO Table 2 shows the differential input impedance of the LO input port. Table 2. LO Input Differential Impedance FREQUENCY (GHz) DIFFERENTIAL INPUT DIFFERENTIAL S11 IMPEDANCE (Ω) MAG ANGLE (˚) 1.5 69.3-j59.4 0.469 –45.8 1.6 64.3-j56.4 0.457 –49.8 1.7 60.0-j52.7 0.440 –53.9 1.8 56.4-j48.9 0.421 –58.0 1.9 53.7-j44.9 0.399 –62.2 2.0 51.4-j41.2 0.377 –66.1 2.1 49.8-j37.5 0.352 –69.9 2.2 48.6-j34.2 0.328 –73.3 2.3 47.8-j31.0 0.303 –76.5 2.4 47.3-j28.2 0.279 –79.5 2.5 46.9-j25.6 0.257 –82.3 ended load resistance) should be larger than 600Ω to assure full gain. The gain is reduced by 20 • log(1 + 120Ω/ RLOAD) in dB when the differential output is terminated by RLOAD. For instance, the gain is reduced by 6.85dB when each output pin is connected to a 50Ω load (100Ω differential load). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. The phase relationship between the I-channel output signal and Q-channel output signal is fixed. When the LO input frequency is larger (or smaller) than the RF input frequency, the Q-channel outputs (QOUT+, QOUT–) lead (or lag) I-channel outputs (IOUT+, IOUT–) by 90°. When AC output coupling is used, the resulting highpass filter’s –3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600Ω. I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60Ω resistor. The output DC bias voltage is VCC – 0.85V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120Ω in parallel with a 5pF internal capacitor, forming a lowpass filter with a –3dB corner frequency at 260MHz. RLOAD (the single- Care should be taken when the demodulator’s outputs are DC coupled to the external load, to make sure that the I/Q mixers are biased properly. If the current drain from each output exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 14mA when the outputs are connected to an external load with a DC voltage higher than VCC – 0.85V. The I/Q output equivalent circuit is shown in Figure 7. LT5515 VCC J1 T1 LDB311G9020C-452 RF 2 2 3 6 1 RF + L1 10nH 1k 4 3 RF – 1.54V C1 1nF NOTE: NO CONNECTION REQUIRED ACCORDING TO BALUN TRANSFORMER MANUFACTURER 5515 F05 Figure 5. RF Input Equivalent Circuit with External Matching at 1.9GHz 5515fa 9 LT5515 U U W U APPLICATIO S I FOR ATIO VCC J2 T2 LDB311G9010C-440 LO 10 2 6 1 3 LO + L4 12nH 200Ω 4 11 LO – C2 1nF NOTE: NO CONNECTION REQUIRED ACCORDING TO BALUN TRANSFORMER MANUFACTURER 5515 F06 Figure 6. LO Input Equivalent Circuit with External Matching at 1.9GHz VCC 60Ω 60Ω 60Ω 60Ω IOUT+ IOUT– 5pF QOUT 16 15 + QOUT– 14 13 5pF 5515 F07 Figure 7. I/Q Output Equivalent Circuit 5515fa 10 LT5515 U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ±0.05 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.75 ± 0.05 R = 0.115 TYP 15 PIN 1 NOTCH R = 0.20 TYP OR 0.35 × 45° CHAMFER 16 0.55 ± 0.20 PIN 1 TOP MARK (NOTE 6) 1 2.15 ± 0.10 (4-SIDES) 2 (UF16) QFN 1004 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 5515fa Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5515 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones LT5500 RF Front End Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer, 1.8V ≤ VSUPPLY ≤ 5.25V LT5502 400MHz Quadrature Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply LTC5505 300MHz to 3.5GHz RF Power Detector >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain LTC5507 100kHz to 1GHz RF Power Detector 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, SC70 Package LT5511 High Signal Level Up Converting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 High Signal Level Down Converting Mixer DC-3GHz, 20dBm IIP3, Integrated LO Buffer LT5516 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator 5515fa 12 Linear Technology Corporation LT 0406 REV A • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com © LINEAR TECHNOLOGY CORPORATION 2003