VISHAY BA783S

BA782S, BA783S
Bandswitching Diodes
FEATURES
SOD-323
♦ Silicon Epitaxial Planar Diode Switches
♦ For electronic bandswitching in radio and
.012 (0.3)
TV tuners in the frequency range of
50 … 1000 MHz.The dynamic forward resistance
is constant and very small over a wide range of
frequency and forward current. The reverse
capacitance is also small and largely
independent of the reverse voltage.
.106 (2.7)
.091 (2.3)
.079 (2.0)
.063 (1.6)
Cathode Mark
max. .049 (1.25)
max. .004 (0.1)
.059 (1.5)
.043 (1.1)
max. .006 (0.15)
Top View
♦ These diodes are also available in SOD-123 case
with the type designations BA782 and BA783.
min. .010 (0.25)
MECHANICAL DATA
Case: SOD-323 Plastic Package
Weight: approx. 0.004 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
VR
35
V
Forward Continuous Current at Tamb = 25 °C
IF
100
mA
Junction Temperature
Tj
125
°C
Storage Temperature Range
TS
–55 to +125
°C
4/98
258
BA782S, BA783S
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at IF = 100 mA
VF
–
–
1
V
Leakage Current at VR = 20 V
IR
–
–
50
nA
BA782S
BA783S
BA782S
BA783S
rf
rf
rf
rf
–
–
–
–
–
–
–
–
0.7
1.2
0.5
0.9
Ω
Ω
Ω
Ω
BA782S
BA783S
Ctot
Ctot
Ctot
–
–
–
–
–
–
1.5
1.25
1.2
pF
pF
pF
LS
–
2.5
–
nH
Dynamic Forward Resistance
at f = 50 to 1000 MHz, IF = 3 mA
at f = 50 to 1000 MHz, IF = 10 mA
Capacitance
at VR = 1 V, f = 1 MHz
at VR = 3 V, f = 1 MHz
Series Inductance across Case
RATINGS AND CHARACTERISTIC CURVES BA782S, BA783S
259