LL4151 Small Signal Diodes FEATURES MiniMELF ♦ Silicon Epitaxial Planar Diode Cathode Mark .142 (3.6) .134 (3.4) ∅ .063 (1.6) .055 (1.4) ♦ Fast switching diode in MiniMELF .019 (0.48) .011 (0.28) case especially suited for automatic insertion. ♦ This diode is also available in other case styles including the DO-35 case with the type designation 1N4151 and the SOD-123 case with the type designation 1N4151W. MECHANICAL DATA Dimensions in inches and (millimeters) Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Value Unit Reverse Voltage VR 50 V Peak Reverse Voltage VRM 75 V Forward DC current at Tamb = 25 °C IF 2001) mA Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that electrodes are kept at ambient temperature. 4/98 LL4151 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit VF – – 1 V IR IR – – – – 50 50 nA µA Ctot – – 2 pF trr trr – – – – 4 2 ns ns Thermal Resistance Junction to Ambient Air RthJA – – 0.351) K/mW Rectification Efficiency at f = 100 MHz, VRF = 2 V ηv 0.45 – – – Forward Voltage at IF = mA Leakage Current at VR = 50 V at VR = 50 V, Tj = 150 °C Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA through IR = 10 mA to IR = 1 mA from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω 1) Valid provided that electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES LL4151 RATINGS AND CHARACTERISTIC CURVES LL4151