HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HSC276A S5 UFP Outline Cathode mark Mark 1 S5 2 1. Cathode 2. Anode HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 5 V Reverse voltage VR 3 V Average rectified current IO 30 mA Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 − − V I R = 1 mA Reverse current IR − − 50 µA VR = 0.5V Forward current IF 35 − − mA VF = 0.5V Capacitance C − − 0.85 pF VR = 0.5V, f = 1 MHz − 30 − − V C=200pF , R = 0Ω , Both forward and reverse direction 1 pulse. *1 ESD-Capability Notes 1. Failure criterion ; IR ≥ 100µA at V R =0.5 V 2 HSC276A Main Characteristic -2 -1 10 Reverse current I R (A) 10 (A) Forward current IF -2 10 10 -3 Ta= 75°C Ta= 25°C -4 10 -3 10 -4 10 Ta= 75°C -5 10 Ta= 25°C -6 -5 10 10 0 0.2 0.4 0.6 0.8 1.0 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 0 4.0 2.0 3.0 1.0 Reverse voltage V R (V) 5.0 Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 0.1 0.1 1.0 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HSC276A Package Dimensions 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Unit: mm Hitachi Code JEDEC EIAJ Mass 4 UFP — Conforms 0.0016 g HSC276A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. 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