HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 (Z) Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HSD88 S3 SFP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSD88 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 10 V Average rectified current IO 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF1 350 — 420 mV IF = 1 mA VF2 500 — 580 IR1 — — 0.2 IR2 — — 10 C — — 0.8 pF VR = 0 V, f = 1 MHz — 30 — — V C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Reverse current Capacitance 1 ESD-Capability * IF = 10 mA µA VR = 2 V VR = 10 V Notes: 1. Failure criterion ; IR > 0.4 µA at VR = 2 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.0, Jun. 2001, page 2 of 5 HSD88 10-2 10-6 10-3 10-7 Reverse current IR (A) Forward current IF (A) Main Characteristic 10-4 Ta = –25°C Ta = 0°C 10-5 Ta = 25°C Ta = 75°C Ta = 50°C 10-8 Ta = 25°C 10-9 Ta = 50°C Ta = 0°C Ta = 75°C Ta = –25°C 10-6 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) 10-10 0 2 4 6 8 10 Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz Capacitance C (pF) 10 1.0 10-1 10-1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage Rev.0, Jun. 2001, page 3 of 5 HSD88 Package Dimensions As of January, 2001 1.0 ± 0.10 0.13 ± 0.05 1.4 ± 0.10 0.5 – 0.55 0.3 ± 0.05 0.6 ± 0.05 Unit: mm Hitachi Code JEDEC EIAJ Mass (reference value) Rev.0, Jun. 2001, page 4 of 5 SFP — — 0.0010 g HSD88 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 Rev.0, Jun. 2001, page 5 of 5