RENESAS HAT2140H

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
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and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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HAT2140H
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1581B(Z)
Preliminary
3rd. Edition
Aug. 2002
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 12.5 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT2140H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
25
A
100
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Avalanche energy
EAR
Note1
Note 3
Note 3
Note2
25
A
25
A
62.5
mJ
30
W
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to + 150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc=25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.2, Aug. 2002, page 2 of 5
HAT2140H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
100
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
12.5
16.0
mΩ
ID = 12.5 A, VGS = 10 V
resistance
RDS(on)
—
13.5
18.0
mΩ
ID = 12.5 A, VGS = 7 V
Forward transfer admittance
|yfs|
27
45
—
S
ID = 12.5 A, VDS = 10 V
Input capacitance
Ciss
—
6500
—
pF
VDS = 10 V
Output capacitance
Coss
—
480
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
210
—
pF
f = 1 MHz
Total gate charge
Qg
—
105
—
nc
VDD = 50 V
Gate to source charge
Qgs
—
20
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
22
—
nc
ID = 25 A
Turn-on delay time
td(on)
—
25
—
ns
VGS = 10 V, ID = 12.5 A
Rise time
tr
—
24
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
100
—
ns
RL = 2.4 Ω
Fall time
tf
—
12
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.83
1.08
V
IF = 25 A, VGS = 0
—
55
—
ns
IF = 25 A, VGS = 0
diF/ dt = 100 A/ µs
Body–drain diode reverse recovery trr
time
Note4
Note4
Note4
Note4
Notes: 4. Pulse test
Rev.2, Aug. 2002, page 3 of 5
HAT2140H
Package Dimensions
As of January, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.2, Aug. 2002, page 4 of 5
LFPAK
—
—
0.080 g
HAT2140H
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.2, Aug. 2002, page 5 of 5