RENESAS HSM123

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
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algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
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rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
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(http://www.renesas.com).
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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when considering the use of a product contained herein for any specific purposes, such as apparatus or
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contained therein.
HSM123
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-027F (Z)
Rev.6
Nov. 2002
Features
• Low capacitance, proof against high voltage.
• Fast recovery time.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSM123
A9
MPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode2
2. Anode1
3. Cathode1
Anode2
HSM123
Absolute Maximum Ratings *1
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Peak forward current
IFM
300
mA
4
A
Non-Repetitive peak forward surge current
IFSM *
2
Average forward current
IO
100
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. Per one device.
2. Within 1 µs forward surge current.
Electrical Characteristics *
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
—
0.70
1.0
V
IF = 10 mA
VF2
—
0.79
1.0
IF = 50 mA
VF3
—
0.85
1.2
IF = 100 mA
Reverse current
IR
—
—
0.1
µA
VR = 80 V
Capacitance
C
—
1.0
4.0
pF
VR = 0 V, f = 1 MHz
Reverse recovery time
trr
—
—
3.0
ns
IF = 10 mA, VR = 6 V, RL = 50 Ω
Note: Per one device.
Rev.6, Nov. 2002, page 2 of 2
HSM123
Main Characteristic
10-5
10-2
10-4
Reverse current IR (A)
Forward current IF (A)
10-3
10-5
10-6
10-7
10-6
10-7
10-8
10-8
10-9
0
0.2
0.4
0.6
0.8
1.0
10-9
0
20
40
60
80
100
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward Current vs. Forward Voltage
Fig.2 Reverse Current vs. Reverse Voltage
f=1MHz
Capacitance C (pF)
10
1.0
0.1
1.0
10
100
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse Voltage
Rev.6, Nov. 2002, page 3 of 3
HSM123
Package Dimensions
As of July, 2002
1.9 ± 0.2
2.8
+ 0.2
– 0.6
+ 0.2
1.1 – 0.1
0.3
2.8 +– 0.1
0 – 0.1
(0.3)
(0.95) (0.95)
+ 0.10
0.16 – 0.06
(0.65)
1.5 ± 0.15
0.10
3–0.4 +– 0.05
(0.65)
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.6, Nov. 2002, page 4 of 4
MPAK
—
Conforms
0.011 g
HSM123
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.6, Nov. 2002, page 5 of 5