MAXIM MAX5925BEUB

19-3443; Rev 0; 10/04
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
The MAX5924/MAX5925/MAX5926 are available with
open-drain PGOOD and/or PGOOD outputs. The
devices also feature a circuit breaker with temperaturecompensated RDS(ON) sensing. The MAX5926 features
a selectable 0ppm/°C or 3300ppm/°C temperature coefficient. The MAX5924 temperature coefficient is
0ppm/°C and the MAX5925 temperature coefficient is
3300ppm/°C. Autoretry and latched fault-management
configurations are available (see the Selector Guide).
Features
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
Hot Swap 1V to 13.2V with VCC ≥ 2.25V
Drive High-Side n-Channel MOSFET
Operation With or Without RSENSE
Protected During Turn-On into Shorted Load
Circuit-Breaker Threshold Adjustable Down to
10mV
Programmable Slew-Rate Control
Circuit Breaker with Temperature-Compensated
RDS(ON) Sensing
Programmable Turn-On Voltage
Autoretry or Latched Fault Management
10-Pin µMAX or 16-Pin QSOP Packages
Ordering Information
TEMP RANGE
PIN-PACKAGE
MAX5924AEUB
PART
-40°C to +85°C
10 µMAX
MAX5924BEUB*
-40°C to +85°C
10 µMAX
MAX5924CEUB*
-40°C to +85°C
10 µMAX
MAX5924DEUB*
-40°C to +85°C
10 µMAX
MAX5925AEUB
-40°C to +85°C
10 µMAX
MAX5925BEUB*
-40°C to +85°C
10 µMAX
MAX5925CEUB*
-40°C to +85°C
10 µMAX
MAX5925DEUB*
-40°C to +85°C
10 µMAX
MAX5926EEE*
-40°C to +85°C
16 QSOP–EP**
*Future product—contact factory for availability.
**EP = Exposed pad.
Typical Operating Circuits
Applications
TYPICAL OPERATION WITHOUT RSENSE
Base Stations
BACKPLANE
RAID
Remote-Access Servers
VS
VCC
REMOVABLE CARD
N
1V TO VCC
VOUT
2.25V TO 13.2V
RCB
Network Routers and Switches
Servers
RSC
CB
GATE SENSE OUT
Portable Device Bays
SC_DET
VCC
µMAX is a registered trademark of Maxim Integrated Products, Inc.
Selector Guide appears at end of data sheet.
Pin Configurations appear at end of data sheet.
GND
GND
MAX5925
MAX5926
SEE FIGURE 1 FOR A DETAILED TYPICAL OPERATING CIRCUIT WITHOUT RSENSE.
Typical Operating Circuits continued at end of data sheet.
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX5924/MAX5925/MAX5926
General Description
The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap
controllers allow the safe insertion and removal of circuit
cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device
supply voltage, VCC, is at or above 2.25V and the hotswapped supply, VS, does not exceed VCC.
The MAX5924/MAX5925/MAX5926 hot-swap controllers
limit the inrush current to the load and provide a circuitbreaker function for overcurrent protection. The devices
operate with or without a sense resistor. When operating without a sense resistor, load-probing circuitry
ensures a short circuit is not present during startup,
then gradually turns on the external MOSFET. After the
load probing is complete, on-chip comparators provide
overcurrent protection by monitoring the voltage drop
across the external MOSFET on-resistance. In the event
of a fault condition, the load is disconnected.
The MAX5924/MAX5925/MAX5926 include many integrated features that reduce component count and
design time, including programmable turn-on voltage,
slew rate, and circuit-breaker threshold. An on-board
charge pump provides the gate drive for a low-cost,
external n-channel MOSFET.
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted).
VCC .........................................................................-0.3V to +14V
GATE*.....................................................................-0.3V to +20V
All Other Pins .........-0.3V to the lower of (VCC + 0.3V) and +14V
SC_DET Current (200ms pulse width, 15% duty cycle) ...140mA
Continuous Current (all other pins) .....................................20mA
Continuous Power Dissipation (TA = +70°C)
10-Pin µMAX (derate 6.9mW/°C above +70°C) ...........556mW
16-Pin QSOP (derate 18.9mW/°C above +70°C).......1509mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*GATE is internally driven and clamped. Do not drive GATE with external source.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA =
-40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open,
TA = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
13.20
V
POWER SUPPLIES
VCC Operating Range
VCC
2.25
VS Operating Range
VS
VS as defined in Figure 1
Supply Current
ICC
FET on, SC_DET = VCC
1.05
VCC
V
1.5
2.5
mA
2.06
2.25
UNDERVOLTAGE LOCKOUT (UVLO)
UVLO Threshold
VUVLO
VCC UVLO Deglitch Time
tDG
VCC UVLO Startup Delay
tD,UVLO
Default value, VS and VCC increasing, Figure 1
1.86
(Note 2)
900
123
277
V
µs
350
ms
LOAD-PROBE
Load-Probe Resistance (Note 3)
Load-Probe Timeout
Load-Probe Threshold Voltage
RLP
2.25V < VCC < 5V
4
30
65
5V < VCC < 13.2V
3
10
20
tLP
VLP,TH
(Note 4)
Ω
61
102
163
ms
180
200
220
mV
CIRCUIT BREAKER
ICB
ICB25
TC = high (MAX5926), MAX5924
TC = low (MAX5926),
MAX5925 (Note 5)
Circuit-Breaker Programming
Current
ICB85
Circuit-Breaker Programming
Current During Startup
(No RSENSE)
ICB,SU
Circuit-Breaker Enable Threshold
(No RSENSE)
VCB,EN
2
TC = low (MAX5926),
MAX5925 (Note 5)
35
37
42
VCC = 2.25V,
TA = +25°C
44
51
58
5V ≤ VCC ≤ 13.2V,
TA = +25°C
49
54
58
VCC = 2.25V,
TA = +85°C
47
52
60
5V ≤ VCC ≤ 13.2V,
TA = +85°C
58
63
70
VGATE - VOUT, rising gate voltage (Note 6)
µA
2 x ICB
µA
4.0
V
_______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
(VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA =
-40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open,
TA = +25°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
Circuit-Breaker Comparator
Offset Voltage
VCB_OS
Fast Circuit-Breaker Offset
Resistor
RCBF
Figure 3
1.2
Slow Circuit-Breaker Delay
tCBS
VCB - VSENSE = 10mV
0.95
Fast Circuit-Breaker Delay
tCBF
VCB - VSENSE = 500mV
Circuit-Breaker Trip Gate
Pulldown Current
IGATE,PD
Circuit-Breaker Temperature
Coefficient
TCICB
VGATE = 2.5V, VCC = 13.2V
20
TYP
MAX
UNITS
0.3
±4.7
mV
1.9
2.5
kΩ
1.6
2.80
ms
280
ns
27
mA
MAX5924, TC = high (MAX5926)
0
MAX5925, TC = low (MAX5926)
3300
ppm/°C
MOSFET DRIVER
External Gate Drive
VGS
Load Voltage Slew Rate
SR
Gate Pullup Current Capacity
IGATE
VGATE - VOUT
2.25V ≤ VCC ≤ 12.6V
3.46
4.91
6.70
VCC = 13.2V (Note 7)
3.33
5
6.70
SLEW = open, CGATE = 10nF
2.19
9.5
16.00
SLEW = 300nF, CGATE = 10nF (Note 8)
0.44
0.84
1.18
VGATE = 0V
239
V
V/ms
µA
ENABLE COMPARATOR
EN, EN1 Reference Threshold
EN, EN1 Hysteresis
VEN/UVLO
VEN (MAX5924/MAX5925) or
VEN1 (MAX5926) rising
0.755
VEN,HYS
EN, EN1 Input Bias Current
IEN
0.795
0.836
30
V
mV
EN (MAX5924/MAX5925) = VCC,
EN1 (MAX5926) = VCC
±8
±50
nA
DIGITAL OUTPUTS (PGOOD, PGOOD)
Power-Good Output Low Voltage
VOL
IOL = 1mA
0.3
0.4
V
Power-Good Output Open-Drain
Leakage Current
IOH
PGOOD/PGOOD = 13.2V
0.2
1
µA
70
99
%
Power-Good Trip Point (% of VGS) VTHPGOOD VGATE - VOUT, rising gate voltage
Power-Good Hysteresis
50
VPG,HYS
0.36
V
LOGIC AND TIMING (TC, LATCH (MAX5926), EN2 (MAX5926)
Autoretry Delay
Input Voltage
Input Bias Current
tRETRY
Autoretry mode
VIH
1.0
1.6
VIL
IBIAS
2.6
2.0
0.4
Logic high at 13.2V
3
s
V
µA
_______________________________________________________________________________________
3
MAX5924/MAX5925/MAX5926
ELECTRICAL CHARACTERISTICS (continued)
ELECTRICAL CHARACTERISTICS (continued)
(VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA =
-40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open,
TA = +25°C, unless otherwise noted.) (Note 1)
All devices are 100% tested at TA = +25°C and +85°C. All temperature limits at -40°C are guaranteed by design.
VCC drops 30% below the undervoltage lockout voltage during tDG are ignored.
RLP is the resistance measured between VCC and SC_DET during the load-probing phase, tLP.
Guaranteed by design.
The circuit-breaker programming current increases linearly from VCC = 2.25V to 5V. See the Circuit-Breaker Current vs.
Supply Voltage graph in the Typical Operating Characteristics.
Note 6: See the Startup Mode section for more information.
Note 7: VGATE is clamped to 17V (typ) above ground.
Note 8: dv/dt = 330 x 10-9/CSLEW (V/ms), nMOS device used for measurement was IRF9530N. Slew rate is measured at the load.
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Typical Operating Characteristics
(VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.)
MAX5926 SUPPLY CURRENT
vs. TEMPERATURE
ENABLED
2.4
1.6
VCC = VS
VCC = 13.2V
2.0
7
MAX5924 toc02
VCC = VS
MAX5924 toc01
2.0
GATE-DRIVE VOLTAGE
vs. SUPPLY VOLTAGE
MAX5924 toc03
MAX5926 SUPPLY CURRENT
vs. SUPPLY VOLTAGE
6
VCC = 5.0V
DISABLED
VGATE - VS (V)
1.2
ICC (mA)
ICC (mA)
1.6
1.2
0.8
5
VS = 1V
VS = 3V
4
VS = VCC
VS = 5V
0.8
VCC = 3.0V
0.4
VCC = 2.25V
0
4
6
8
10
12
2
-15
-40
14
10
35
60
85
2
4
6
8
10
12
14
TEMPERATURE (°C)
VCC (V)
GATE-DRIVE VOLTAGE
vs. TEMPERATURE
CIRCUIT-BREAKER CURRENT
vs. HOT-SWAP VOLTAGE
CIRCUIT-BREAKER CURRENT
vs. SUPPLY VOLTAGE (TC = 3300ppm/°C)
VCC = 5.0V
56
5.5
55
MAX5924 toc05
VCC = VS
TC = 3300ppm/°C
52
MAX5924 toc06
VCC (V)
MAX5924 toc04
2
6.0
3
0.4
0
VCC = VS
53
VCC = 3.0V
4.5
48
ICB (µA)
ICB (µA)
5.0
VGS (V)
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
51
44
4.0
VCC = 13.2V
3.0
VCC = 13.2V
36
-40
-15
10
35
TEMPERATURE (°C)
4
49
TC = 0ppm/°C
40
3.5
60
85
0
2
4
6
8
VS (V)
10
12
47
14
2
4
6
8
VCC (V)
_______________________________________________________________________________________
10
12
14
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
CIRCUIT-BREAKER PROGRAMMING
CURRENT vs. TEMPERATURE
CIRCUIT-BREAKER CURRENT
vs. SUPPLY VOLTAGE (TC = 0ppm/°C)
VCC = VS
39.2
VCC = VS = 5V
70
60
ICB (µA)
39.0
ICB (µA)
MAX5924 toc08
80
MAX5924 toc07
39.4
38.8
TC = 3300ppm/°C
50
38.6
40
38.4
30
TC = 0ppm/°C
20
38.2
2
4
6
8
10
12
-40
14
TURN-ON WAVEFORM
(CSLEW = OPEN)
-15
10
35
60
85
TEMPERATURE (°C)
VCC (V)
TURN-ON WAVEFORM
(CSLEW = 330nF)
MAX5924 toc09
GATE
5V/div
MAX5924 toc10
GATE
5V/div
0V
0V
OUT
5V/div
0V
OUT
5V/div
0V
PGOOD
5V/div
0V
PGOOD
5V/div
0V
200µs/div
2ms/div
TURN-OFF WAVEFORM
OVERCURRENT CIRCUIT-BREAKER EVENT
MAX5924 toc11
MAX5924 toc12
1A/div
EN1
5V/div
0V
IFET
0A
tCBS
GATE
10V/div
5V/div
GATE
0V
10V/div
0V
0V
OUT
PGOOD
5V/div
0V
5V/div
PGOOD
0V
2µs/div
400µs/div
_______________________________________________________________________________________
5
MAX5924/MAX5925/MAX5926
Typical Operating Characteristics (continued)
(VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.)
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
Typical Operating Characteristics (continued)
(VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.)
AUTORETRY DELAY
SHORT-CIRCUIT CIRCUIT-BREAKER EVENT
MAX5924 toc14
MAX5924 toc13
IFET
1A/div
EN1
tD,UVLO
0A
GATE
5V/div
OUT
0V
5V/div
0V
5V/div
0V
tRETRY
5V/div
SC_DET
5V/div
0V
OUT
100mV/div
0V
PGOOD
0V
2µs/div
400ms/div
OVERCURRENT FAULT AND
AUTORETRY DELAY
UVLO DELAY AND LOAD PROBING
MAX5924 toc16
MAX5924 toc15
EN1
GATE
SC_DET
5V/div
0V
5V/div
0V
EN1
5V/div
SC_DET
5V/div
0V
tD,UVLO
tLP
5V/div
0V
0V
OUT
200mV/div
OUT
100mV/div
0V
0V
40ms/div
400ms/div
UVLO RESPONSE
UVLO DEGLITCH RESPONSE
MAX5924 toc17
MAX5924 toc18
>tDG
2V/div
GATE
2V/div
GATE
<tDG
0V
1V/div
1V/div
VCC
VCC
0V
200µs/div
6
0V
0V
200µs/div
_______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
PIN
MAX5924A/ MAX5924B/
MAX5924C/ MAX5924D/
MAX5926
MAX5925A/ MAX5925B/
MAX5925C MAX5925D
NAME
FUNCTION
Power-Supply Input. Connect VCC to a voltage between 2.25V and 13.2V.
VCC must always be equal to or greater than VS (see Figure 1).
Short-Circuit Detection Output. SC_DET forces current into the external load
through a series resistor, RSC, at startup to determine whether there is a short
circuit (load probing). Select RSC based on the desired slow-comparator trip
current (see the Selecting a Circuit-Breaker Threshold section). Connect
SC_DET to VCC when using RSENSE, or to disable load probing when it is not
desired.
1
1
1
VCC
2
2
2
SC_DET
3
3
—
EN
4
—
4
PGOOD
Open-Drain Active-Low Power-Good Output
—
4
7
PGOOD
Open-Drain Active-High Power-Good Output
5
5
5
GND
Ground
6
6
12
SLEW
Slew-Rate Adjustment Input. Connect an external capacitor between SLEW and
GND to adjust the gate slew rate. Leave SLEW unconnected for the default
slew rate.
7
7
13
GATE
Gate-Drive Output. Connect GATE to the gate of the external n-channel
MOSFET.
8
8
14
OUT
Output Voltage. Connect OUT to the source of the external MOSFET.
9
9
15
SENSE
10
10
16
CB
Circuit-Breaker Threshold Input. Connect an external resistor, RCB, from CB to
VS to set the circuit-breaker threshold voltage.
ON/OFF Control Input. Drive EN high to enable the device. Drive EN low to
disable the device. An optional external resistive-divider connected between
VCC, EN, and GND sets the programmable turn-on voltage.
Circuit-Breaker Sense Input. Connect SENSE to OUT when not using an
external RSENSE (Figure 1). Connect SENSE to the drain of the external
MOSFET when using an external RSENSE (Figure 2).
—
—
3
EN1
Active-High ON/OFF Control Input. Drive EN1 high to enable the device when
EN2 is low. Drive EN1 low to disable the device, regardless of the state of EN2.
An optional external resistive-divider between VCC, EN1, and GND sets the
programmable turn-on voltage while EN2 is low.
—
—
6
EN2
Active-Low ON/OFF Control Input. Drive EN2 low to enable the device when
EN1 is high. Drive EN2 high to disable the device, regardless of the state of
EN1.
—
—
8
LATCH
Latch Mode Input. Drive LATCH low for autoretry mode. Drive LATCH high for
latched mode.
—
—
9
TC
Circuit-Breaker Temperature Coefficient Selection Input. Drive TC low to select
a 3300ppm/°C temperature coefficient. Drive TC high to select a 0ppm/°C
temperature coefficient.
—
—
10, 11
N.C.
—
—
EP
EP
No Connection. Not internally connected.
Exposed Pad. Connect EP to GND.
_______________________________________________________________________________________
7
MAX5924/MAX5925/MAX5926
Pin Description
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
BACKPLANE
VS
VCC
REMOVABLE CARD
1V TO VCC
2.25V TO 13.2V
RSC
RCB
CB
GATE SENSE
20kΩ
V+
OUT
VCC
ON (ON*)
SC_DET
GND
MAX5925
MAX5926
EN (EN1**)
EN2**
EN
EN2
TC**
CL
PGOOD**
PGOOD (PGOOD*)
LATCH** GND
GND
SLEW
CSLEW
*MAX5925A AND MAX5925C.
**MAX5926.
DC-DC CONVERTER
Figure 1. Typical Operating Circuit (Without RSENSE)
BACKPLANE
VS
VCC
REMOVABLE CARD
RSENSE
1V TO VCC
2.25V TO 13.2V
20kΩ
RCB
CB
SENSE
GATE
VCC
GND
EN (EN1**)
EN2**
EN
EN2
TC**
VCC
V+
OUT
ON (ON*)
SC_DET
MAX5924
MAX5926
CL
PGOOD**
PGOOD (PGOOD*)
LATCH**
*MAX5924A AND MAX5924C.
**MAX5926.
GND
GND
SLEW
CSLEW
DC-DC CONVERTER
Figure 2. Typical Operating Circuit (With RSENSE)
8
_______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
MAX5924/MAX5925/MAX5926
GATE
VCC
CHARGE PUMP
SLEW
N
A
MAX5924
MAX5925
MAX5926
2µA
VCC
RLP
N
VCB,TH
CB
SC_DET
VS
SLOW
COMPARATOR
OUT
TIMER
RCBF
VCBF,TH
FAST
COMPARATOR
0.2V
OSCILLATOR
ICB
TC***
PGOOD*
LOGIC
CONTROL
SENSE
PGOOD**
LATCH***
VCC
1.24V
REF
EN/(EN1***)
VCC
0.8V
VCC
GND
1.24V
*MAX5924B, MAX5924D, MAX5925B, MAX5925D, MAX5926 ONLY.
**MAX5924A, MAX5924C, MAX5925A, MAX5925C, MAX5926 ONLY.
***MAX5926 ONLY.
EN2***
Figure 3. Functional Diagram
_______________________________________________________________________________________
9
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
Detailed Description
VCC RISES ABOVE
VUVLO
The MAX5924/MAX5925/MAX5926 are hot-swap controller ICs designed for applications where a line card is
inserted into a live backplane. Normally, when a line card
is plugged into a live backplane, the card’s discharged
filter capacitors provide a low impedance that can
momentarily cause the main power supply to collapse.
The MAX5924/MAX5925/MAX5926 are designed to
reside either in the backplane or in the removable card
to provide inrush current limiting and short-circuit protection. This is achieved using an external n-channel
MOSFET and an optional external current-sense resistor.
Several critical parameters can be programmed:
• Slew rate (inrush current)
• Circuit-breaker threshold
• Turn-on voltage
• Fault-management mode (MAX5926)
• Circuit-breaker temperature coefficient (MAX5926)
AUTODETECT
RSENSE
RSENSE
PRESENT
RSENSE
ABSENT
LOAD
PROBE*
SLEW-RATELIMITED STARTUP
SUCCESS
FAILURE
NORMAL
OPERATION
FAULT
MANAGEMENT
*VOUT MUST REACH VLP,TH WITHIN tLP.
Figure 4. Startup Flow Chart
See the Selector Guide for a device-specific list of factory-preset features and parameters.
VOUT
SR = dV
dt
Startup Mode
The MAX5924/MAX5925/MAX5926 control an external
MOSFET connected in series with the hot-swapped
power supply, V S . These devices hold the external
MOSFET off while the supply voltage, VCC, is below the
undervoltage lockout threshold or when the device is
disabled (see the EN (MAX5924/MAX5925, EN1/EN2
(MAX5926) section). When VCC rises above VUVLO and
the MAX5924/MAX5925/MAX5926 are enabled, an
undervoltage lockout timer initiates. VCC must remain
greater than VUVLO for tD,UVLO to enter startup.
During the first stage of startup, the MAX5924/
MAX5925/MAX5926 detect whether an external sense
resistor is present and autoconfigure accordingly
(Figure 4). Bilevel fault protection temporarily disables,
and load-probing circuitry enables, if no sense resistor
is detected (see the Load Probing section). During load
probing, if VOUT does not rise above VLP,TH within tLP,
the device manages the fault according to the selected
fault-management mode (see the Latched and
Autoretry Fault Management section). If V OUT rises
above V LP,TH within t LP , the MAX5924/MAX5925/
MAX5926 begin startup (Figure 5). If an external
R SENSE is detected, load probing is bypassed and
bilevel fault protection enables with a startup circuitbreaker programming current of ICB,SU = 2 x ICB to
accommodate the higher-than-normal inrush current
required to charge board capacitance, CL.
10
SR = dV
dt
CL = SMALL
VLP,TH
(0.2V typ)
VOUT
IINRUSH
CL = LARGE
CL = SMALL
I PROBE
ILOAD
ILOAD
tPROBE < tLP
Figure 5. Startup Waveform
During startup, the MAX5924/MAX5925/MAX5926 gradually turn on the MOSFET, and VOUT rises at a rate determined by the selected slew rate, SR (see the Slew Rate
section). The inrush current, IINRUSH, is limited to a level
proportional to the load capacitance, CL, and SR:
IINRUSH(A) = CL x 1000 x SR
where SR is in V/ms and CL is the load capacitance in
Farads. For operation with and without RSENSE, once
VGS exceeds VCB,EN, PGOOD and/or PGOOD assert
and the MAX5924/MAX5925/MAX5926 enable standard
bilevel fault protection (see the Bilevel Fault Protection
section).
______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
Normal Operation
In normal operation, after startup is complete, protection is provided by turning off the external MOSFET
when a fault condition is encountered. Dual-speed/
bilevel fault protection incorporates two comparators
with different thresholds and response times to monitor
the current:
1) Slow comparator. This comparator has a 1.6ms
(typ) response time. The slow comparator ignores
low-amplitude momentary current glitches. After an
extended overcurrent condition, a fault is acknowledged and the MOSFET gate is discharged.
2) Fast comparator. This comparator has a fixed
response time and a higher threshold voltage. The
fast comparator turns off the MOSFET immediately
after it detects a large amplitude event such as a
short circuit.
In each case, when a fault is encountered, the powergood output deasserts and the device drives GATE low.
After a fault, the MAX5924A, MAX5924B, MAX5925A,
and MAX5925B latch GATE low and the MAX5924C,
MAX5924D, MAX5925C, and MAX5925D enter the
autoretry mode. The MAX5926 has selectable latched or
autoretry modes. Figure 7 shows the slow comparator
response to an overcurrent fault.
Bilevel Fault Protection
Bilevel Fault Protection in Startup Mode
Bilevel fault protection is disabled during startup when
no RSENSE is detected. The device enables bilevel fault
protection when RSENSE is detected, but the overcurrent
trip levels are higher than normal during startup because
ICB,SU = 2 x ICB (see the Startup Mode section).
Slow Comparator
The slow comparator is disabled during startup while
the external MOSFET turns on. This allows the
MAX5924/MAX5925/MAX5926 to ignore higher than
normal inrush currents charging the board capacitors
when a card is first plugged in.
PGOOD*
PGOOD**
VGATE
VTHPGOOD
14
4.3V TO 6.7V
RLP (Ω)
12
VOUT
10
8
ILIM
6
ILOAD
tCBS
VCC = VS
4
2
4
6
8
10
12
14
VCC (V)
Figure 6. Load-Probe Resistance vs. Supply Voltage
*MAX5924B, MAX5924D, MAX5925B, MAX5925D, AND MAX5926 ONLY.
**MAX5924A, MAX5924C, MAX5925A, MAX5925C, AND MAX5926 ONLY.
Figure 7. Slow Comparator Response to an Overcurrent Fault
______________________________________________________________________________________
11
MAX5924/MAX5925/MAX5926
Load Probing
The MAX5924/MAX5925/MAX5926 load-probing circuitry detects short-circuit conditions during startup. As the
device begins load probing, SC_DET is connected to
VCC through an internal switch with an on-resistance of
RLP (Figure 6). VCC then charges the load with a probe
current:
IPROBE = (VCC - VOUT)/(RLP + RSC) (Figure 1)
If the load voltage does not reach VLP,TH (0.2V, typ)
within tLP, a short-circuit fault is detected and the channel is turned off according to the selected fault-management mode (see the Fault Management section and
Figure 5). PGOOD/PGOOD asserts at the end of the
startup period, tSTART, if no fault condition is present
(see the Turn-On Waveforms in the Typical Operating
Characteristics).
Table 1. Selecting Fault Management
Mode (MAX5926)
60
VCC = 13.2V
LATCH
50
IGATE, PD (mA)
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
40
30
Autoretry mode
High
Latched mode
Power-Good Outputs
The power-good output(s) are open-drain output(s) that
deassert:
• When VCC < VUVLO
20
10
0
0
1
2
3
4
5
6
7
VGS (V)
Figure 8a. Gate Discharge Current vs. MOSFET Gate-to-Source
Voltage
If the slow comparator detects an overload condition while
in normal operation (after startup is complete), it turns off
the external MOSFET by discharging the gate capacitance with I GATE,PD . The magnitude of I GATE,PD
depends on the external MOSFET gate-to-source voltage, VGS. The discharge current is strongest immediately following a fault and decreases as the MOSFET
gate is discharged (Figure 8a).
Fast Comparator
The fast comparator is used for serious current overloads
or short circuits. If the load current reaches the fast comparator threshold, the device quickly forces the MOSFET
off. The fast comparator has a response time of 280ns,
and discharges GATE with IGATE,PD (Figure 8a).
Latched and Autoretry Fault Management
The MAX5924A, MAX5924B, MAX5925A, and MAX5925B
latch the external MOSFET off when an overcurrent fault
is detected. Following an overcurrent fault, the
MAX5924C, MAX5924D, MAX5925C, and MAX5925D
enter autoretry mode. The MAX5926 can be configured
for either latched or autoretry mode (see Table 1).
In autoretry, a fault turns the external MOSFET off then
automatically restarts the device after the autoretry
delay, tRETRY. During the autoretry delay, pull EN or
EN1 low to restart the device. In latched mode, pull EN
or EN1 low for at least 100µs to clear a latched fault
and restart the device.
12
FAULT MANAGEMENT
Low
• During tD,UVLO
• When VGS < VTHPGOOD
• During load probing
• When disabled (EN = GND (MAX5924/MAX5925),
EN1 = GND or EN2 = high (MAX5926))
• During fault management
• During t RETRY or when latched off (MAX5924A,
MAX5924B, MAX5925A, MAX5925B, or MAX5926
(LATCH = low)).
PGOOD/PGOOD asserts only if the part is in normal
mode and no faults are present.
Undervoltage Lockout (UVLO)
UVLO circuitry prevents the MAX5924/MAX5925/
MAX5926 from turning on the external MOSFET until VCC
exceeds the UVLO threshold, VUVLO, for tD,UVLO. UVLO
protects the external MOSFET from insufficient gate-drive
voltage, and tD,UVLO ensures that the board is fully
plugged into the backplane and VCC is stable prior to
powering the hot-swapped system. Any input voltage
transient at VCC below the UVLO threshold for more than
the UVLO deglitch period, tDG, resets the device and initiates a startup sequence. Device operation is protected
from momentary input-voltage steps extending below the
UVLO threshold for a deglitch period, tDG. However, the
power-good output(s) may momentarily deassert if the
magnitude of a negative step in VCC exceeds approximately 0.5V, and VCC drops below VUVLO. Operation is
unaffected and the power-good output(s) assert(s) within
200µs as shown in Figure 8b. This figure also shows that
if the UVLO condition exceeds tDG = 900µs (typ), the
power-good output(s) again deassert(s) and the load is
disconnected.
______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
MAX5924/MAX5925/MAX5926
VS = VCC = 13.2V
CSLEW = 1µF
CL = 10µF
GATE
2V/div
MOSFET ONLY
VCC
5V/div
1V/div
MOSFET AND
CGATE = 20nF
0V
0V
1V/div
PGOOD
200µs/div
10ms/div
Figure 8b. PGOOD Behavior with Large Negative Input-Voltage
Step when VS is Near VS(MIN)
Determining Inrush Current
Determining a circuit’s inrush current is necessary to
choose a proper MOSFET. The MAX5924/MAX5925/
MAX5926 regulate the inrush current by controlling the
output-voltage slew rate, but inrush current is also a
function of load capacitance. Determine an anticipated
inrush current using the following equation:
IINRUSH (A) = CL
dVOUT
= CL × SR × 1000
dt
where CL is the load capacitance in Farads, and SR is
the selected MAX5924/MAX5925/MAX5926 output slew
rate in V/ms. For example, assuming a load capacitance of 100µF and using the value of SR = 10V/ms, the
anticipated inrush current is 1A. If a 16V/ms output slew
rate is used, the inrush current increases to 1.6A.
Choose SR so the maximum anticipated inrush current
does not trip the fast circuit-breaker comparator during
startup.
Slew Rate
The MAX5924/MAX5925/MAX5926 limit the slew rate of
VOUT. Connect an external capacitor, CSLEW, between
SLEW and GND to adjust the slew-rate limit. Floating
SLEW sets the maximum slew rate to the default value.
Calculate CSLEW using the following equation:
CSLEW = 330 ✕ 10-9 / SR
where SR is the desired slew rate in V/ms.
A 2µA (typ) pullup current clamped to 1.4V causes an
initial jump in the gate voltage, VGATE, if CGATE is small
Figure 9. Impact of CGATE on the VGATE Waveform
VS
RCB
R1
VCC
CB
GATE
SENSE
OUT
EN (EN1)
R2
MAX5924_
MAX5925_
MAX5926
RSC
SC_DET
(EN2)
GND
( ) ARE FOR MAX5926 ONLY.
VS,TURN-ON =
(R2 + R1) VEN/UVLO
R2
Figure 10. Adjustable Turn-On Voltage
and the slew rate is slow (Figure 3). Figure 9 illustrates
how the addition of gate capacitance eliminates this initial jump. CGATE should not exceed 25nF.
EN (MAX5924/MAX5925),
EN1/EN2 (MAX5926)
The enable comparators control the on/off function of
the MAX5924/MAX5925/MAX5926. Enable is also used
to reset the fault latch in latch mode. Pull EN or EN1 low
for 100µs to reset the latch. A resistive divider between
EN or EN1, VS, and GND sets the programmable turnon voltage to a voltage greater than VUVLO (Figure 10).
______________________________________________________________________________________
13
15,000
15,000
TC = 0ppm/°C
12,000
12,000
VS = 1.5V
9000
6000
TC = 3300ppm/°C
VS = 1.5V
VS = 1.4V
RCB(MAX) (Ω)
RCB(MAX) (Ω)
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
VS = 1.4V
VS = 1.3V
9000
VS = 1.3V
6000
VS = 1.2V
VS = 1.2V
3000
VS = 1.1V
3000
VS = 1.1V
VS = 1.0V
VS = 1.0V
0
0
-40
-15
10
35
60
85
-15
-40
TEMPERATURE (°C)
10
35
60
85
TEMPERATURE (°C)
Figure 11. Maximum Circuit-Breaker Programming Resistor vs. Temperature
Selecting a Circuit-Breaker Threshold
The MAX5924/MAX5925/MAX5926 offer a circuit-breaker function to protect the external MOSFET and the load
from the potentially damaging effects of excessive current. As load current flows through RDS(ON) (Figure 12)
or RSENSE (Figure 13), a voltage drop is generated.
After VGS exceeds VCB,EN, the MAX5924/MAX5925/
MAX5926 monitor this voltage to detect overcurrent
conditions. If this voltage exceeds the circuit-breaker
threshold, the external MOSFET turns off and the
power-good output(s) deassert(s). To accommodate
different MOSFETs, sense resistors, and load currents,
the MAX5924/MAX5925/MAX5926 voltage across RCB
can be set between 10mV and 500mV. The value of the
circuit-breaker voltage must be carefully selected
based on VS (Figure 11).
No RSENSE Mode
When operating without RSENSE, calculate the circuitbreaker threshold using the MOSFET’s RDS(ON) at the
worst possible operating condition, and add a 20%
overcurrent margin to the maximum circuit current. For
example, if a MOSFET has an RDS(ON) of 0.06Ω at TA =
+25°C, and a normalized on-resistance factor of 1.75 at
TA = +105°C, the RDS(ON) used for calculation is the
product of these two numbers, or (0.06Ω) x (1.75) =
0.105Ω. Then, if the maximum current is expected to be
2A, using a 20% margin, the current for calculation is
(2A) x (1.2) = 2.4A. The resulting minimum circuitbreaker threshold is then a product of these two numbers, or (0.105Ω) x (2.4A) = 0.252V. Using this method
to choose a circuit-breaker threshold allows the circuit
to operate under worst-case conditions without causing
a circuit-breaker fault, but the circuit-breaker function
will still detect a short circuit or a gross overcurrent
condition.
14
ILOAD
RDS(ON)
VS
VOUT
RCB
CB
GATE
SENSE OUT
SLOW
COMPARATOR
VCB,TH
VCB,OS
MAX5925
MAX5926
RCBF
FAST
COMPARATOR
VCBF,TH
TC
SELECT
VCB,OS
ICB
Figure 12. Circuit Breaker Using RDS(ON)
To determine the proper circuit-breaker resistor value
use the following equation, which refers to Figure 12:
RCB =
(ITRIPSLOW
x RDS(ON)( T)) + VCB ,OS
ICB
where ITRIPSLOW is the desired slow-comparator trip
current.
______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
VS
50
VOUT
RCB
GATE
VCB AND VSENSE (mV)
SENSE
CB
OUT
SLOW
COMPARATOR
VCB,TH
VCB,OS
MAX5925
MAX5926
RCBF
FAST
COMPARATOR
VCBF,TH
ICB
TC
SELECT
VS = VCC = 13.2V, RCB = 672Ω, ITRIPSLOW = 5A,
RDS(ON)(25) = 6.5mΩ
45
CIRCUIT-BREAKER TRIP REGION
(VSENSE ≥ VCB)
40
35
30
VSENSE = RDS(ON)(T) x ILOAD(MAX)
(4500ppm/°C)
25
VCB,OS
VCB = ICB(T) x RCB + RCB,OS
(3300ppm/°C)
20
-15
-40
10
35
60
85
110
TEMPERATURE (°C)
Figure 14. Circuit-Breaker Trip Point and Current-Sense
Voltage vs. Temperature
Figure 13. Circuit Breaker Using RSENSE
The fast-comparator trip current is determined by the
selected RCB value and cannot be adjusted independently. The fast-comparator trip current is given by:
ITRIPFAST =
ICB x (RCBF + RCB) ± VCB ,OS
RDS(ON)( T)
RSENSE Mode
When operating with R SENSE , calculate the circuitbreaker threshold using the worst possible operating
conditions, and add a 20% overcurrent margin to the
maximum circuit current. For example, with a maximum
expected current of 2A, using a 20% margin, the current for calculation is (2A) x (1.2) = 2.4A. The resulting
minimum circuit-breaker threshold is then a product of
this current and RSENSE = 0.06Ω, or (0.06Ω) x (2.4A) =
0.144V. Using this method to choose a circuit-breaker
threshold allows the circuit to operate under worst-case
conditions without causing a circuit-breaker fault, but
the circuit-breaker function will still detect a short-circuit
or a gross overcurrent condition.
Table 2. Programming the Temperature
Coefficient (MAX5926)
To determine the proper circuit-breaker resistor value,
use the following equation, which refers to Figure 12:
RCB =
(ITRIPSLOW
x RSENSE) + VCB ,OS
ICB
where ITRIPSLOW is the desired slow-comparator trip
current.
The fast-comparator trip current is determined by the
selected RCB value and cannot be adjusted independently. The fast-comparator trip current is given by:
ITRIPFAST =
ICB x (RCBF + RCB) ± VCB ,OS
RSENSE
Table 3. Suggested External MOSFETs
APPLICATION
CURRENT (A)
PART
DESCRIPTION
1
International Rectifier
IRF7401
SO-8
TC
TCICB (ppm/°C)
2
Siliconix Si4378DY
SO-8
High
0
5
Siliconix SUD40N02-06
DPAK
Low
3300
10
Siliconix SUB85N02-03
D2PAK
______________________________________________________________________________________
15
MAX5924/MAX5925/MAX5926
ILOAD
RSENSE
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
Applications Information
HIGH-CURRENT PATH
Component Selection
SENSE RESISTOR
RCB
MAX5924
MAX5925
MAX5926
Figure 15. Kelvin Connection for the Current-Sense Resistor
Circuit-Breaker Temperature Coefficient
In applications where the external MOSFET’s on-resistance is used as a sense resistor to determine overcurrent conditions, a 3300ppm/°C temperature coefficient
is desirable to compensate for the RDS(ON) temperature coefficient. Use the MAX5926’s TC input to select
the circuit-breaker programming current’s temperature
coefficient, TCICB (see Table 2). The MAX5924 temperature coefficient is preset to 0ppm/°C, and the
MAX5925’s is preset to 3300ppm/°C.
Setting TCICB to 3300ppm/°C allows the circuit-breaker
threshold to track and compensate for the increase in the
MOSFET’s RDS(ON) with increasing temperature. Most
MOSFETs have a temperature coefficient within a
3000ppm/°C to 7000ppm/°C range. Refer to the MOSFET
data sheet for a device-specific temperature coefficent.
RDS(ON) and ICB are temperature dependent, and can
therefore be expressed as functions of temperature. At
a given temperature, the MAX5925/MAX5926 indicate
an overcurrent condition when:
ITRIPSLOW x RDS(ON)(T) ≥ ICB(T) x RCB + |VCB,OS|
where VCB,OS is the worst-case offset voltage. Figure 14
graphically portrays operating conditions for a MOSFET
with a 4500ppm/°C temperature coefficient.
n-Channel MOSFET
Select the external n-channel MOSFET according to the
application’s current and voltage level. Table 3 lists some
recommended components. Choose the MOSFET’s
on-resistance, RDS(ON), low enough to have a minimum
voltage drop at full load to limit the MOSFET power dissipation. High RDS(ON) can cause undesired power
loss and output ripple if the board has pulsing loads or
triggers an external undervoltage reset monitor at full
load. Determine the device power-rating requirement to
accommodate a short circuit on the board at startup
with the device configured in autoretry mode.
Using the MAX5924/MAX5925/MAX5926 in latched mode
allows the consideration of MOSFETs with higher RDS(ON)
and lower power ratings. A MOSFET can typically withstand single-shot pulses with higher dissipation than the
specified package rating. Low MOSFET gate capacitance is not necessary since the inrush current limiting is
achieved by limiting the gate dv/dt. Table 4 lists some
recommended manufacturers and components.
Be sure to select a MOSFET with an appropriate gate
drive (see the Typical Operating Characteristics).
Typically, for VCC less than 3V or greater than 12V, select
a 2.5V VGS MOSFET.
Optional Sense Resistor
Select the sense resistor in conjunction with RCB to set
the slow and fast circuit-breaker thresholds (see the
Selecting a Circuit-Breaker Threshold section). The
sense-resistor power dissipation depends on the device
configuration. If latched mode is selected, PRSENSE =
(IOVERLOAD)2 x RSENSE; if autoretry is selected, then
P RSENSE = (I OVERLOAD ) 2 x R SENSE x (t ON /t RETRY ).
Choose a sense-resistor power rating of twice the
PRSENSE for long-term reliable operation. In addition,
ensure that the sense resistor has an adequate I2T rating
to survive instantaneous short-circuit conditions.
Table 4. Component Manufacturers
COMPONENT
Sense Resistors
MOSFETs
16
MANUFACTURER
PHONE
Dale-Vishay
402-564-3131
www.vishay.com
WEBSITE
www.irctt.com
IRC
828-264-8861
Fairchild
888-522-5372
www.fairchildsemi.com
International Rectifier
310-233-3331
www.irf.com
______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
RCB =
• Full-Load Current = 5A
• No RSENSE
• IINRUSH = 500mA
Procedures:
1) Calculate the required slew rate and corresponding
CSLEW:
I
V
SR = INRUSH = 3.3
1000 × CL
ms
CSLEW =
330 × 10 −9
330 × 10 −9
=
= 0.1µF
SR
3.3 V
ms
2) Select a MOSFET and determine the worst-case
power dissipation.
3) Minimize power dissipation at full load current and
at high temperature by selecting a MOSFET with an
appropriate RDS(ON). Assume a 20°C temperature
difference between the MAX5924/MAX5925/
MAX5926 and the MOSFET.
For example, at room temperature the IRF7822’s
RDS(ON) = 6.5mΩ. The temperature coefficient for
this device is 4000ppm/°C. The maximum RDS(ON)
for the MOSFET at TJ(MOSFET) = +105°C is:
(ITRIPSLOW
x RDS(ON)105
ICB85
) + VCB,OS
RCB = ((6A x 8.58mΩ) + 4.7mV)/69.5µA = 808Ω
Layout Considerations
Keep all traces as short as possible and maximize the
high-current trace dimensions to reduce the effect of
undesirable parasitic inductance. Place the MAX5924/
MAX5925/MAX5926 close to the card’s connector. Use
a ground plane to minimize impedance and inductance. Minimize the current-sense resistor trace length
(<10mm), and ensure accurate current sensing with
Kelvin connections.
When the output is short circuited, the voltage drop
across the external MOSFET becomes large. Hence, the
power dissipation across the switch increases, as does
the die temperature. An efficient way to achieve good
power dissipation on a surface-mount package is to lay
out two copper pads directly under the MOSFET package on both sides of the board. Connect the two pads
to the ground plane through vias, and use enlarged
copper mounting pads on the top side of the board.
It is important to maximize the thermal coupling between
the MOSFET and the MAX5925/MAX5926 to balance the
device junction temperatures. When the temperatures of
the two devices are equal, the circuit-breaker trip
threshold is most accurate. Keep the MOSFET and the
MAX5925/MAX5926 as close to each other as possible
to facilitate thermal coupling.
ppm 

RDS(ON)105 = 6.5mΩ × 1 + (105°C − 25°C) × 4000


°C 
= 8.58mΩ
Typical Operating Circuits
(continued)
The power dissipation in the MOSFET at full load is:
2
2
PD = I R = (5A)
BACKPLANE
× 8.58mΩ = 215mW
VS
4) Select RCB.
Since the MOSFET’s temperature coefficient is
4000ppm/°C, which is greater than TC ICB
(3300ppm/°C), calculate the circuit-breaker threshold at high temperature so the circuit breaker is
guaranteed not to trip at lower temperature during
normal operation (Figure 15).
ITRIPSLOW = IFULL LOAD + 20% = 5A + 20% = 6A
RDS(ON)105 = 8.58mΩ (max), from step 2
ICB85 = 58µA x (1 + (3300ppm/°C x (85 - 25)°C)
= 69.5µA (min)
VCC
TYPICAL OPERATION WITH RSENSE
REMOVABLE CARD
RSENSE
1V TO VCC
N
VOUT
2.25V TO 13.2V
RCB
CB
SENSE GATE
OUT
VCC
GND
GND
MAX5924
MAX5926
SEE FIGURE 2 FOR A DETAILED TYPICAL OPERATING CIRCUIT WITH RSENSE.
______________________________________________________________________________________
17
MAX5924/MAX5925/MAX5926
Design Procedure
Given:
• VCC = VS = 5V
• CL = 150µF
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
Selector Guide
POWER-GOOD OUTPUT
CIRCUIT-BREAKER
TEMPCO
(ppm/°C)
FAULT MANAGEMENT
PGOOD
(OPEN-DRAIN)
PGOOD
(OPEN-DRAIN)
MAX5924A
0
Latched
✓
—
MAX5924B
0
Latched
—
✓
MAX5924C
0
Autoretry
✓
—
MAX5924D
0
Autoretry
—
✓
MAX5925A
3300
Latched
✓
—
MAX5925B
3300
Latched
—
✓
MAX5925C
3300
Autoretry
✓
—
MAX5925D
3300
Autoretry
—
✓
0 or 3300 (Selectable)
Latched or Autoretry (Selectable)
✓
✓
PART
MAX5926
Pin Configurations
TOP VIEW
VCC 1
16 CB
SC_DET 2
VCC 1
SC_DET
2
EN
3
PGOOD (PGOOD)
GND
10 CB
9
SENSE
8
OUT
4
7
GATE
5
6
SLEW
MAX5924
MAX5925
µMAX
( ) FOR THE MAX5924A, MAX5924C, MAX5925A, AND MAX5925C.
15 SENSE
EN1 3
14 OUT
PGOOD 4
GND 5
13 GATE
MAX5926
12 SLEW
EN2 6
11 N.C.
PGOOD 7
10 N.C.
LATCH 8
9
TC
QSOP-EP
Chip Information
TRANSISTOR COUNT: 3751
PROCESS: BiCMOS
18
______________________________________________________________________________________
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
10LUMAX.EPS
e
4X S
10
INCHES
10
H
0 0.50±0.1
0.6±0.1
1
1
0.6±0.1
BOTTOM VIEW
TOP VIEW
D2
MILLIMETERS
MAX
DIM MIN
0.043
A
0.006
A1
0.002
A2
0.030
0.037
D1
0.116
0.120
0.114
0.118
D2
0.116
E1
0.120
E2
0.114
0.118
H
0.187
0.199
L
0.0157 0.0275
L1
0.037 REF
b
0.007
0.0106
e
0.0197 BSC
c
0.0035 0.0078
0.0196 REF
S
α
0°
6°
MAX
MIN
1.10
0.15
0.05
0.75
0.95
3.05
2.95
3.00
2.89
3.05
2.95
2.89
3.00
4.75
5.05
0.40
0.70
0.940 REF
0.177
0.270
0.500 BSC
0.090
0.200
0.498 REF
0°
6°
E2
GAGE PLANE
A2
c
A
b
D1
FRONT VIEW
A1
α
E1
L
L1
SIDE VIEW
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, 10L uMAX/uSOP
APPROVAL
DOCUMENT CONTROL NO.
21-0061
REV.
I
1
1
______________________________________________________________________________________
19
MAX5924/MAX5925/MAX5926
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
QSOP,EXP. PADS.EPS
MAX5924/MAX5925/MAX5926
1V to 13.2V, n-Channel Hot-Swap Controllers
Require No Sense Resistor
PACKAGE OUTLINE,
16L QSOP, .150" EXPOSED PAD
21-0112
C
1
1
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
20 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2004 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.