19-3443; Rev 0; 10/04 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor The MAX5924/MAX5925/MAX5926 are available with open-drain PGOOD and/or PGOOD outputs. The devices also feature a circuit breaker with temperaturecompensated RDS(ON) sensing. The MAX5926 features a selectable 0ppm/°C or 3300ppm/°C temperature coefficient. The MAX5924 temperature coefficient is 0ppm/°C and the MAX5925 temperature coefficient is 3300ppm/°C. Autoretry and latched fault-management configurations are available (see the Selector Guide). Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Hot Swap 1V to 13.2V with VCC ≥ 2.25V Drive High-Side n-Channel MOSFET Operation With or Without RSENSE Protected During Turn-On into Shorted Load Circuit-Breaker Threshold Adjustable Down to 10mV Programmable Slew-Rate Control Circuit Breaker with Temperature-Compensated RDS(ON) Sensing Programmable Turn-On Voltage Autoretry or Latched Fault Management 10-Pin µMAX or 16-Pin QSOP Packages Ordering Information TEMP RANGE PIN-PACKAGE MAX5924AEUB PART -40°C to +85°C 10 µMAX MAX5924BEUB* -40°C to +85°C 10 µMAX MAX5924CEUB* -40°C to +85°C 10 µMAX MAX5924DEUB* -40°C to +85°C 10 µMAX MAX5925AEUB -40°C to +85°C 10 µMAX MAX5925BEUB* -40°C to +85°C 10 µMAX MAX5925CEUB* -40°C to +85°C 10 µMAX MAX5925DEUB* -40°C to +85°C 10 µMAX MAX5926EEE* -40°C to +85°C 16 QSOP–EP** *Future product—contact factory for availability. **EP = Exposed pad. Typical Operating Circuits Applications TYPICAL OPERATION WITHOUT RSENSE Base Stations BACKPLANE RAID Remote-Access Servers VS VCC REMOVABLE CARD N 1V TO VCC VOUT 2.25V TO 13.2V RCB Network Routers and Switches Servers RSC CB GATE SENSE OUT Portable Device Bays SC_DET VCC µMAX is a registered trademark of Maxim Integrated Products, Inc. Selector Guide appears at end of data sheet. Pin Configurations appear at end of data sheet. GND GND MAX5925 MAX5926 SEE FIGURE 1 FOR A DETAILED TYPICAL OPERATING CIRCUIT WITHOUT RSENSE. Typical Operating Circuits continued at end of data sheet. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX5924/MAX5925/MAX5926 General Description The MAX5924/MAX5925/MAX5926 1V to 13.2V hot-swap controllers allow the safe insertion and removal of circuit cards into live backplanes. These devices hot swap supplies ranging from 1V to 13.2V provided that the device supply voltage, VCC, is at or above 2.25V and the hotswapped supply, VS, does not exceed VCC. The MAX5924/MAX5925/MAX5926 hot-swap controllers limit the inrush current to the load and provide a circuitbreaker function for overcurrent protection. The devices operate with or without a sense resistor. When operating without a sense resistor, load-probing circuitry ensures a short circuit is not present during startup, then gradually turns on the external MOSFET. After the load probing is complete, on-chip comparators provide overcurrent protection by monitoring the voltage drop across the external MOSFET on-resistance. In the event of a fault condition, the load is disconnected. The MAX5924/MAX5925/MAX5926 include many integrated features that reduce component count and design time, including programmable turn-on voltage, slew rate, and circuit-breaker threshold. An on-board charge pump provides the gate drive for a low-cost, external n-channel MOSFET. MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND, unless otherwise noted). VCC .........................................................................-0.3V to +14V GATE*.....................................................................-0.3V to +20V All Other Pins .........-0.3V to the lower of (VCC + 0.3V) and +14V SC_DET Current (200ms pulse width, 15% duty cycle) ...140mA Continuous Current (all other pins) .....................................20mA Continuous Power Dissipation (TA = +70°C) 10-Pin µMAX (derate 6.9mW/°C above +70°C) ...........556mW 16-Pin QSOP (derate 18.9mW/°C above +70°C).......1509mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature .....................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C *GATE is internally driven and clamped. Do not drive GATE with external source. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open, TA = +25°C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 13.20 V POWER SUPPLIES VCC Operating Range VCC 2.25 VS Operating Range VS VS as defined in Figure 1 Supply Current ICC FET on, SC_DET = VCC 1.05 VCC V 1.5 2.5 mA 2.06 2.25 UNDERVOLTAGE LOCKOUT (UVLO) UVLO Threshold VUVLO VCC UVLO Deglitch Time tDG VCC UVLO Startup Delay tD,UVLO Default value, VS and VCC increasing, Figure 1 1.86 (Note 2) 900 123 277 V µs 350 ms LOAD-PROBE Load-Probe Resistance (Note 3) Load-Probe Timeout Load-Probe Threshold Voltage RLP 2.25V < VCC < 5V 4 30 65 5V < VCC < 13.2V 3 10 20 tLP VLP,TH (Note 4) Ω 61 102 163 ms 180 200 220 mV CIRCUIT BREAKER ICB ICB25 TC = high (MAX5926), MAX5924 TC = low (MAX5926), MAX5925 (Note 5) Circuit-Breaker Programming Current ICB85 Circuit-Breaker Programming Current During Startup (No RSENSE) ICB,SU Circuit-Breaker Enable Threshold (No RSENSE) VCB,EN 2 TC = low (MAX5926), MAX5925 (Note 5) 35 37 42 VCC = 2.25V, TA = +25°C 44 51 58 5V ≤ VCC ≤ 13.2V, TA = +25°C 49 54 58 VCC = 2.25V, TA = +85°C 47 52 60 5V ≤ VCC ≤ 13.2V, TA = +85°C 58 63 70 VGATE - VOUT, rising gate voltage (Note 6) µA 2 x ICB µA 4.0 V _______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor (VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open, TA = +25°C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN Circuit-Breaker Comparator Offset Voltage VCB_OS Fast Circuit-Breaker Offset Resistor RCBF Figure 3 1.2 Slow Circuit-Breaker Delay tCBS VCB - VSENSE = 10mV 0.95 Fast Circuit-Breaker Delay tCBF VCB - VSENSE = 500mV Circuit-Breaker Trip Gate Pulldown Current IGATE,PD Circuit-Breaker Temperature Coefficient TCICB VGATE = 2.5V, VCC = 13.2V 20 TYP MAX UNITS 0.3 ±4.7 mV 1.9 2.5 kΩ 1.6 2.80 ms 280 ns 27 mA MAX5924, TC = high (MAX5926) 0 MAX5925, TC = low (MAX5926) 3300 ppm/°C MOSFET DRIVER External Gate Drive VGS Load Voltage Slew Rate SR Gate Pullup Current Capacity IGATE VGATE - VOUT 2.25V ≤ VCC ≤ 12.6V 3.46 4.91 6.70 VCC = 13.2V (Note 7) 3.33 5 6.70 SLEW = open, CGATE = 10nF 2.19 9.5 16.00 SLEW = 300nF, CGATE = 10nF (Note 8) 0.44 0.84 1.18 VGATE = 0V 239 V V/ms µA ENABLE COMPARATOR EN, EN1 Reference Threshold EN, EN1 Hysteresis VEN/UVLO VEN (MAX5924/MAX5925) or VEN1 (MAX5926) rising 0.755 VEN,HYS EN, EN1 Input Bias Current IEN 0.795 0.836 30 V mV EN (MAX5924/MAX5925) = VCC, EN1 (MAX5926) = VCC ±8 ±50 nA DIGITAL OUTPUTS (PGOOD, PGOOD) Power-Good Output Low Voltage VOL IOL = 1mA 0.3 0.4 V Power-Good Output Open-Drain Leakage Current IOH PGOOD/PGOOD = 13.2V 0.2 1 µA 70 99 % Power-Good Trip Point (% of VGS) VTHPGOOD VGATE - VOUT, rising gate voltage Power-Good Hysteresis 50 VPG,HYS 0.36 V LOGIC AND TIMING (TC, LATCH (MAX5926), EN2 (MAX5926) Autoretry Delay Input Voltage Input Bias Current tRETRY Autoretry mode VIH 1.0 1.6 VIL IBIAS 2.6 2.0 0.4 Logic high at 13.2V 3 s V µA _______________________________________________________________________________________ 3 MAX5924/MAX5925/MAX5926 ELECTRICAL CHARACTERISTICS (continued) ELECTRICAL CHARACTERISTICS (continued) (VCC, EN (MAX5924/MAX5925), EN1 (MAX5926) = +2.25V to +13.2V; EN2 (MAX5926) = 0V; VS (see Figure 1) = +1.05V to VCC; TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC = 5V, RL = 500Ω from OUT to GND, CL = 100µF, SLEW = open, TA = +25°C, unless otherwise noted.) (Note 1) All devices are 100% tested at TA = +25°C and +85°C. All temperature limits at -40°C are guaranteed by design. VCC drops 30% below the undervoltage lockout voltage during tDG are ignored. RLP is the resistance measured between VCC and SC_DET during the load-probing phase, tLP. Guaranteed by design. The circuit-breaker programming current increases linearly from VCC = 2.25V to 5V. See the Circuit-Breaker Current vs. Supply Voltage graph in the Typical Operating Characteristics. Note 6: See the Startup Mode section for more information. Note 7: VGATE is clamped to 17V (typ) above ground. Note 8: dv/dt = 330 x 10-9/CSLEW (V/ms), nMOS device used for measurement was IRF9530N. Slew rate is measured at the load. Note 1: Note 2: Note 3: Note 4: Note 5: Typical Operating Characteristics (VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.) MAX5926 SUPPLY CURRENT vs. TEMPERATURE ENABLED 2.4 1.6 VCC = VS VCC = 13.2V 2.0 7 MAX5924 toc02 VCC = VS MAX5924 toc01 2.0 GATE-DRIVE VOLTAGE vs. SUPPLY VOLTAGE MAX5924 toc03 MAX5926 SUPPLY CURRENT vs. SUPPLY VOLTAGE 6 VCC = 5.0V DISABLED VGATE - VS (V) 1.2 ICC (mA) ICC (mA) 1.6 1.2 0.8 5 VS = 1V VS = 3V 4 VS = VCC VS = 5V 0.8 VCC = 3.0V 0.4 VCC = 2.25V 0 4 6 8 10 12 2 -15 -40 14 10 35 60 85 2 4 6 8 10 12 14 TEMPERATURE (°C) VCC (V) GATE-DRIVE VOLTAGE vs. TEMPERATURE CIRCUIT-BREAKER CURRENT vs. HOT-SWAP VOLTAGE CIRCUIT-BREAKER CURRENT vs. SUPPLY VOLTAGE (TC = 3300ppm/°C) VCC = 5.0V 56 5.5 55 MAX5924 toc05 VCC = VS TC = 3300ppm/°C 52 MAX5924 toc06 VCC (V) MAX5924 toc04 2 6.0 3 0.4 0 VCC = VS 53 VCC = 3.0V 4.5 48 ICB (µA) ICB (µA) 5.0 VGS (V) MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor 51 44 4.0 VCC = 13.2V 3.0 VCC = 13.2V 36 -40 -15 10 35 TEMPERATURE (°C) 4 49 TC = 0ppm/°C 40 3.5 60 85 0 2 4 6 8 VS (V) 10 12 47 14 2 4 6 8 VCC (V) _______________________________________________________________________________________ 10 12 14 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor CIRCUIT-BREAKER PROGRAMMING CURRENT vs. TEMPERATURE CIRCUIT-BREAKER CURRENT vs. SUPPLY VOLTAGE (TC = 0ppm/°C) VCC = VS 39.2 VCC = VS = 5V 70 60 ICB (µA) 39.0 ICB (µA) MAX5924 toc08 80 MAX5924 toc07 39.4 38.8 TC = 3300ppm/°C 50 38.6 40 38.4 30 TC = 0ppm/°C 20 38.2 2 4 6 8 10 12 -40 14 TURN-ON WAVEFORM (CSLEW = OPEN) -15 10 35 60 85 TEMPERATURE (°C) VCC (V) TURN-ON WAVEFORM (CSLEW = 330nF) MAX5924 toc09 GATE 5V/div MAX5924 toc10 GATE 5V/div 0V 0V OUT 5V/div 0V OUT 5V/div 0V PGOOD 5V/div 0V PGOOD 5V/div 0V 200µs/div 2ms/div TURN-OFF WAVEFORM OVERCURRENT CIRCUIT-BREAKER EVENT MAX5924 toc11 MAX5924 toc12 1A/div EN1 5V/div 0V IFET 0A tCBS GATE 10V/div 5V/div GATE 0V 10V/div 0V 0V OUT PGOOD 5V/div 0V 5V/div PGOOD 0V 2µs/div 400µs/div _______________________________________________________________________________________ 5 MAX5924/MAX5925/MAX5926 Typical Operating Characteristics (continued) (VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.) MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor Typical Operating Characteristics (continued) (VCC = 5V, CL = 100µF, CSLEW = 330nF, CGATE = 10nF, RL = 500Ω, Figure 1, TA = +25°C, unless otherwise noted.) AUTORETRY DELAY SHORT-CIRCUIT CIRCUIT-BREAKER EVENT MAX5924 toc14 MAX5924 toc13 IFET 1A/div EN1 tD,UVLO 0A GATE 5V/div OUT 0V 5V/div 0V 5V/div 0V tRETRY 5V/div SC_DET 5V/div 0V OUT 100mV/div 0V PGOOD 0V 2µs/div 400ms/div OVERCURRENT FAULT AND AUTORETRY DELAY UVLO DELAY AND LOAD PROBING MAX5924 toc16 MAX5924 toc15 EN1 GATE SC_DET 5V/div 0V 5V/div 0V EN1 5V/div SC_DET 5V/div 0V tD,UVLO tLP 5V/div 0V 0V OUT 200mV/div OUT 100mV/div 0V 0V 40ms/div 400ms/div UVLO RESPONSE UVLO DEGLITCH RESPONSE MAX5924 toc17 MAX5924 toc18 >tDG 2V/div GATE 2V/div GATE <tDG 0V 1V/div 1V/div VCC VCC 0V 200µs/div 6 0V 0V 200µs/div _______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor PIN MAX5924A/ MAX5924B/ MAX5924C/ MAX5924D/ MAX5926 MAX5925A/ MAX5925B/ MAX5925C MAX5925D NAME FUNCTION Power-Supply Input. Connect VCC to a voltage between 2.25V and 13.2V. VCC must always be equal to or greater than VS (see Figure 1). Short-Circuit Detection Output. SC_DET forces current into the external load through a series resistor, RSC, at startup to determine whether there is a short circuit (load probing). Select RSC based on the desired slow-comparator trip current (see the Selecting a Circuit-Breaker Threshold section). Connect SC_DET to VCC when using RSENSE, or to disable load probing when it is not desired. 1 1 1 VCC 2 2 2 SC_DET 3 3 — EN 4 — 4 PGOOD Open-Drain Active-Low Power-Good Output — 4 7 PGOOD Open-Drain Active-High Power-Good Output 5 5 5 GND Ground 6 6 12 SLEW Slew-Rate Adjustment Input. Connect an external capacitor between SLEW and GND to adjust the gate slew rate. Leave SLEW unconnected for the default slew rate. 7 7 13 GATE Gate-Drive Output. Connect GATE to the gate of the external n-channel MOSFET. 8 8 14 OUT Output Voltage. Connect OUT to the source of the external MOSFET. 9 9 15 SENSE 10 10 16 CB Circuit-Breaker Threshold Input. Connect an external resistor, RCB, from CB to VS to set the circuit-breaker threshold voltage. ON/OFF Control Input. Drive EN high to enable the device. Drive EN low to disable the device. An optional external resistive-divider connected between VCC, EN, and GND sets the programmable turn-on voltage. Circuit-Breaker Sense Input. Connect SENSE to OUT when not using an external RSENSE (Figure 1). Connect SENSE to the drain of the external MOSFET when using an external RSENSE (Figure 2). — — 3 EN1 Active-High ON/OFF Control Input. Drive EN1 high to enable the device when EN2 is low. Drive EN1 low to disable the device, regardless of the state of EN2. An optional external resistive-divider between VCC, EN1, and GND sets the programmable turn-on voltage while EN2 is low. — — 6 EN2 Active-Low ON/OFF Control Input. Drive EN2 low to enable the device when EN1 is high. Drive EN2 high to disable the device, regardless of the state of EN1. — — 8 LATCH Latch Mode Input. Drive LATCH low for autoretry mode. Drive LATCH high for latched mode. — — 9 TC Circuit-Breaker Temperature Coefficient Selection Input. Drive TC low to select a 3300ppm/°C temperature coefficient. Drive TC high to select a 0ppm/°C temperature coefficient. — — 10, 11 N.C. — — EP EP No Connection. Not internally connected. Exposed Pad. Connect EP to GND. _______________________________________________________________________________________ 7 MAX5924/MAX5925/MAX5926 Pin Description MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor BACKPLANE VS VCC REMOVABLE CARD 1V TO VCC 2.25V TO 13.2V RSC RCB CB GATE SENSE 20kΩ V+ OUT VCC ON (ON*) SC_DET GND MAX5925 MAX5926 EN (EN1**) EN2** EN EN2 TC** CL PGOOD** PGOOD (PGOOD*) LATCH** GND GND SLEW CSLEW *MAX5925A AND MAX5925C. **MAX5926. DC-DC CONVERTER Figure 1. Typical Operating Circuit (Without RSENSE) BACKPLANE VS VCC REMOVABLE CARD RSENSE 1V TO VCC 2.25V TO 13.2V 20kΩ RCB CB SENSE GATE VCC GND EN (EN1**) EN2** EN EN2 TC** VCC V+ OUT ON (ON*) SC_DET MAX5924 MAX5926 CL PGOOD** PGOOD (PGOOD*) LATCH** *MAX5924A AND MAX5924C. **MAX5926. GND GND SLEW CSLEW DC-DC CONVERTER Figure 2. Typical Operating Circuit (With RSENSE) 8 _______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor MAX5924/MAX5925/MAX5926 GATE VCC CHARGE PUMP SLEW N A MAX5924 MAX5925 MAX5926 2µA VCC RLP N VCB,TH CB SC_DET VS SLOW COMPARATOR OUT TIMER RCBF VCBF,TH FAST COMPARATOR 0.2V OSCILLATOR ICB TC*** PGOOD* LOGIC CONTROL SENSE PGOOD** LATCH*** VCC 1.24V REF EN/(EN1***) VCC 0.8V VCC GND 1.24V *MAX5924B, MAX5924D, MAX5925B, MAX5925D, MAX5926 ONLY. **MAX5924A, MAX5924C, MAX5925A, MAX5925C, MAX5926 ONLY. ***MAX5926 ONLY. EN2*** Figure 3. Functional Diagram _______________________________________________________________________________________ 9 MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor Detailed Description VCC RISES ABOVE VUVLO The MAX5924/MAX5925/MAX5926 are hot-swap controller ICs designed for applications where a line card is inserted into a live backplane. Normally, when a line card is plugged into a live backplane, the card’s discharged filter capacitors provide a low impedance that can momentarily cause the main power supply to collapse. The MAX5924/MAX5925/MAX5926 are designed to reside either in the backplane or in the removable card to provide inrush current limiting and short-circuit protection. This is achieved using an external n-channel MOSFET and an optional external current-sense resistor. Several critical parameters can be programmed: • Slew rate (inrush current) • Circuit-breaker threshold • Turn-on voltage • Fault-management mode (MAX5926) • Circuit-breaker temperature coefficient (MAX5926) AUTODETECT RSENSE RSENSE PRESENT RSENSE ABSENT LOAD PROBE* SLEW-RATELIMITED STARTUP SUCCESS FAILURE NORMAL OPERATION FAULT MANAGEMENT *VOUT MUST REACH VLP,TH WITHIN tLP. Figure 4. Startup Flow Chart See the Selector Guide for a device-specific list of factory-preset features and parameters. VOUT SR = dV dt Startup Mode The MAX5924/MAX5925/MAX5926 control an external MOSFET connected in series with the hot-swapped power supply, V S . These devices hold the external MOSFET off while the supply voltage, VCC, is below the undervoltage lockout threshold or when the device is disabled (see the EN (MAX5924/MAX5925, EN1/EN2 (MAX5926) section). When VCC rises above VUVLO and the MAX5924/MAX5925/MAX5926 are enabled, an undervoltage lockout timer initiates. VCC must remain greater than VUVLO for tD,UVLO to enter startup. During the first stage of startup, the MAX5924/ MAX5925/MAX5926 detect whether an external sense resistor is present and autoconfigure accordingly (Figure 4). Bilevel fault protection temporarily disables, and load-probing circuitry enables, if no sense resistor is detected (see the Load Probing section). During load probing, if VOUT does not rise above VLP,TH within tLP, the device manages the fault according to the selected fault-management mode (see the Latched and Autoretry Fault Management section). If V OUT rises above V LP,TH within t LP , the MAX5924/MAX5925/ MAX5926 begin startup (Figure 5). If an external R SENSE is detected, load probing is bypassed and bilevel fault protection enables with a startup circuitbreaker programming current of ICB,SU = 2 x ICB to accommodate the higher-than-normal inrush current required to charge board capacitance, CL. 10 SR = dV dt CL = SMALL VLP,TH (0.2V typ) VOUT IINRUSH CL = LARGE CL = SMALL I PROBE ILOAD ILOAD tPROBE < tLP Figure 5. Startup Waveform During startup, the MAX5924/MAX5925/MAX5926 gradually turn on the MOSFET, and VOUT rises at a rate determined by the selected slew rate, SR (see the Slew Rate section). The inrush current, IINRUSH, is limited to a level proportional to the load capacitance, CL, and SR: IINRUSH(A) = CL x 1000 x SR where SR is in V/ms and CL is the load capacitance in Farads. For operation with and without RSENSE, once VGS exceeds VCB,EN, PGOOD and/or PGOOD assert and the MAX5924/MAX5925/MAX5926 enable standard bilevel fault protection (see the Bilevel Fault Protection section). ______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor Normal Operation In normal operation, after startup is complete, protection is provided by turning off the external MOSFET when a fault condition is encountered. Dual-speed/ bilevel fault protection incorporates two comparators with different thresholds and response times to monitor the current: 1) Slow comparator. This comparator has a 1.6ms (typ) response time. The slow comparator ignores low-amplitude momentary current glitches. After an extended overcurrent condition, a fault is acknowledged and the MOSFET gate is discharged. 2) Fast comparator. This comparator has a fixed response time and a higher threshold voltage. The fast comparator turns off the MOSFET immediately after it detects a large amplitude event such as a short circuit. In each case, when a fault is encountered, the powergood output deasserts and the device drives GATE low. After a fault, the MAX5924A, MAX5924B, MAX5925A, and MAX5925B latch GATE low and the MAX5924C, MAX5924D, MAX5925C, and MAX5925D enter the autoretry mode. The MAX5926 has selectable latched or autoretry modes. Figure 7 shows the slow comparator response to an overcurrent fault. Bilevel Fault Protection Bilevel Fault Protection in Startup Mode Bilevel fault protection is disabled during startup when no RSENSE is detected. The device enables bilevel fault protection when RSENSE is detected, but the overcurrent trip levels are higher than normal during startup because ICB,SU = 2 x ICB (see the Startup Mode section). Slow Comparator The slow comparator is disabled during startup while the external MOSFET turns on. This allows the MAX5924/MAX5925/MAX5926 to ignore higher than normal inrush currents charging the board capacitors when a card is first plugged in. PGOOD* PGOOD** VGATE VTHPGOOD 14 4.3V TO 6.7V RLP (Ω) 12 VOUT 10 8 ILIM 6 ILOAD tCBS VCC = VS 4 2 4 6 8 10 12 14 VCC (V) Figure 6. Load-Probe Resistance vs. Supply Voltage *MAX5924B, MAX5924D, MAX5925B, MAX5925D, AND MAX5926 ONLY. **MAX5924A, MAX5924C, MAX5925A, MAX5925C, AND MAX5926 ONLY. Figure 7. Slow Comparator Response to an Overcurrent Fault ______________________________________________________________________________________ 11 MAX5924/MAX5925/MAX5926 Load Probing The MAX5924/MAX5925/MAX5926 load-probing circuitry detects short-circuit conditions during startup. As the device begins load probing, SC_DET is connected to VCC through an internal switch with an on-resistance of RLP (Figure 6). VCC then charges the load with a probe current: IPROBE = (VCC - VOUT)/(RLP + RSC) (Figure 1) If the load voltage does not reach VLP,TH (0.2V, typ) within tLP, a short-circuit fault is detected and the channel is turned off according to the selected fault-management mode (see the Fault Management section and Figure 5). PGOOD/PGOOD asserts at the end of the startup period, tSTART, if no fault condition is present (see the Turn-On Waveforms in the Typical Operating Characteristics). Table 1. Selecting Fault Management Mode (MAX5926) 60 VCC = 13.2V LATCH 50 IGATE, PD (mA) MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor 40 30 Autoretry mode High Latched mode Power-Good Outputs The power-good output(s) are open-drain output(s) that deassert: • When VCC < VUVLO 20 10 0 0 1 2 3 4 5 6 7 VGS (V) Figure 8a. Gate Discharge Current vs. MOSFET Gate-to-Source Voltage If the slow comparator detects an overload condition while in normal operation (after startup is complete), it turns off the external MOSFET by discharging the gate capacitance with I GATE,PD . The magnitude of I GATE,PD depends on the external MOSFET gate-to-source voltage, VGS. The discharge current is strongest immediately following a fault and decreases as the MOSFET gate is discharged (Figure 8a). Fast Comparator The fast comparator is used for serious current overloads or short circuits. If the load current reaches the fast comparator threshold, the device quickly forces the MOSFET off. The fast comparator has a response time of 280ns, and discharges GATE with IGATE,PD (Figure 8a). Latched and Autoretry Fault Management The MAX5924A, MAX5924B, MAX5925A, and MAX5925B latch the external MOSFET off when an overcurrent fault is detected. Following an overcurrent fault, the MAX5924C, MAX5924D, MAX5925C, and MAX5925D enter autoretry mode. The MAX5926 can be configured for either latched or autoretry mode (see Table 1). In autoretry, a fault turns the external MOSFET off then automatically restarts the device after the autoretry delay, tRETRY. During the autoretry delay, pull EN or EN1 low to restart the device. In latched mode, pull EN or EN1 low for at least 100µs to clear a latched fault and restart the device. 12 FAULT MANAGEMENT Low • During tD,UVLO • When VGS < VTHPGOOD • During load probing • When disabled (EN = GND (MAX5924/MAX5925), EN1 = GND or EN2 = high (MAX5926)) • During fault management • During t RETRY or when latched off (MAX5924A, MAX5924B, MAX5925A, MAX5925B, or MAX5926 (LATCH = low)). PGOOD/PGOOD asserts only if the part is in normal mode and no faults are present. Undervoltage Lockout (UVLO) UVLO circuitry prevents the MAX5924/MAX5925/ MAX5926 from turning on the external MOSFET until VCC exceeds the UVLO threshold, VUVLO, for tD,UVLO. UVLO protects the external MOSFET from insufficient gate-drive voltage, and tD,UVLO ensures that the board is fully plugged into the backplane and VCC is stable prior to powering the hot-swapped system. Any input voltage transient at VCC below the UVLO threshold for more than the UVLO deglitch period, tDG, resets the device and initiates a startup sequence. Device operation is protected from momentary input-voltage steps extending below the UVLO threshold for a deglitch period, tDG. However, the power-good output(s) may momentarily deassert if the magnitude of a negative step in VCC exceeds approximately 0.5V, and VCC drops below VUVLO. Operation is unaffected and the power-good output(s) assert(s) within 200µs as shown in Figure 8b. This figure also shows that if the UVLO condition exceeds tDG = 900µs (typ), the power-good output(s) again deassert(s) and the load is disconnected. ______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor MAX5924/MAX5925/MAX5926 VS = VCC = 13.2V CSLEW = 1µF CL = 10µF GATE 2V/div MOSFET ONLY VCC 5V/div 1V/div MOSFET AND CGATE = 20nF 0V 0V 1V/div PGOOD 200µs/div 10ms/div Figure 8b. PGOOD Behavior with Large Negative Input-Voltage Step when VS is Near VS(MIN) Determining Inrush Current Determining a circuit’s inrush current is necessary to choose a proper MOSFET. The MAX5924/MAX5925/ MAX5926 regulate the inrush current by controlling the output-voltage slew rate, but inrush current is also a function of load capacitance. Determine an anticipated inrush current using the following equation: IINRUSH (A) = CL dVOUT = CL × SR × 1000 dt where CL is the load capacitance in Farads, and SR is the selected MAX5924/MAX5925/MAX5926 output slew rate in V/ms. For example, assuming a load capacitance of 100µF and using the value of SR = 10V/ms, the anticipated inrush current is 1A. If a 16V/ms output slew rate is used, the inrush current increases to 1.6A. Choose SR so the maximum anticipated inrush current does not trip the fast circuit-breaker comparator during startup. Slew Rate The MAX5924/MAX5925/MAX5926 limit the slew rate of VOUT. Connect an external capacitor, CSLEW, between SLEW and GND to adjust the slew-rate limit. Floating SLEW sets the maximum slew rate to the default value. Calculate CSLEW using the following equation: CSLEW = 330 ✕ 10-9 / SR where SR is the desired slew rate in V/ms. A 2µA (typ) pullup current clamped to 1.4V causes an initial jump in the gate voltage, VGATE, if CGATE is small Figure 9. Impact of CGATE on the VGATE Waveform VS RCB R1 VCC CB GATE SENSE OUT EN (EN1) R2 MAX5924_ MAX5925_ MAX5926 RSC SC_DET (EN2) GND ( ) ARE FOR MAX5926 ONLY. VS,TURN-ON = (R2 + R1) VEN/UVLO R2 Figure 10. Adjustable Turn-On Voltage and the slew rate is slow (Figure 3). Figure 9 illustrates how the addition of gate capacitance eliminates this initial jump. CGATE should not exceed 25nF. EN (MAX5924/MAX5925), EN1/EN2 (MAX5926) The enable comparators control the on/off function of the MAX5924/MAX5925/MAX5926. Enable is also used to reset the fault latch in latch mode. Pull EN or EN1 low for 100µs to reset the latch. A resistive divider between EN or EN1, VS, and GND sets the programmable turnon voltage to a voltage greater than VUVLO (Figure 10). ______________________________________________________________________________________ 13 15,000 15,000 TC = 0ppm/°C 12,000 12,000 VS = 1.5V 9000 6000 TC = 3300ppm/°C VS = 1.5V VS = 1.4V RCB(MAX) (Ω) RCB(MAX) (Ω) MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor VS = 1.4V VS = 1.3V 9000 VS = 1.3V 6000 VS = 1.2V VS = 1.2V 3000 VS = 1.1V 3000 VS = 1.1V VS = 1.0V VS = 1.0V 0 0 -40 -15 10 35 60 85 -15 -40 TEMPERATURE (°C) 10 35 60 85 TEMPERATURE (°C) Figure 11. Maximum Circuit-Breaker Programming Resistor vs. Temperature Selecting a Circuit-Breaker Threshold The MAX5924/MAX5925/MAX5926 offer a circuit-breaker function to protect the external MOSFET and the load from the potentially damaging effects of excessive current. As load current flows through RDS(ON) (Figure 12) or RSENSE (Figure 13), a voltage drop is generated. After VGS exceeds VCB,EN, the MAX5924/MAX5925/ MAX5926 monitor this voltage to detect overcurrent conditions. If this voltage exceeds the circuit-breaker threshold, the external MOSFET turns off and the power-good output(s) deassert(s). To accommodate different MOSFETs, sense resistors, and load currents, the MAX5924/MAX5925/MAX5926 voltage across RCB can be set between 10mV and 500mV. The value of the circuit-breaker voltage must be carefully selected based on VS (Figure 11). No RSENSE Mode When operating without RSENSE, calculate the circuitbreaker threshold using the MOSFET’s RDS(ON) at the worst possible operating condition, and add a 20% overcurrent margin to the maximum circuit current. For example, if a MOSFET has an RDS(ON) of 0.06Ω at TA = +25°C, and a normalized on-resistance factor of 1.75 at TA = +105°C, the RDS(ON) used for calculation is the product of these two numbers, or (0.06Ω) x (1.75) = 0.105Ω. Then, if the maximum current is expected to be 2A, using a 20% margin, the current for calculation is (2A) x (1.2) = 2.4A. The resulting minimum circuitbreaker threshold is then a product of these two numbers, or (0.105Ω) x (2.4A) = 0.252V. Using this method to choose a circuit-breaker threshold allows the circuit to operate under worst-case conditions without causing a circuit-breaker fault, but the circuit-breaker function will still detect a short circuit or a gross overcurrent condition. 14 ILOAD RDS(ON) VS VOUT RCB CB GATE SENSE OUT SLOW COMPARATOR VCB,TH VCB,OS MAX5925 MAX5926 RCBF FAST COMPARATOR VCBF,TH TC SELECT VCB,OS ICB Figure 12. Circuit Breaker Using RDS(ON) To determine the proper circuit-breaker resistor value use the following equation, which refers to Figure 12: RCB = (ITRIPSLOW x RDS(ON)( T)) + VCB ,OS ICB where ITRIPSLOW is the desired slow-comparator trip current. ______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor VS 50 VOUT RCB GATE VCB AND VSENSE (mV) SENSE CB OUT SLOW COMPARATOR VCB,TH VCB,OS MAX5925 MAX5926 RCBF FAST COMPARATOR VCBF,TH ICB TC SELECT VS = VCC = 13.2V, RCB = 672Ω, ITRIPSLOW = 5A, RDS(ON)(25) = 6.5mΩ 45 CIRCUIT-BREAKER TRIP REGION (VSENSE ≥ VCB) 40 35 30 VSENSE = RDS(ON)(T) x ILOAD(MAX) (4500ppm/°C) 25 VCB,OS VCB = ICB(T) x RCB + RCB,OS (3300ppm/°C) 20 -15 -40 10 35 60 85 110 TEMPERATURE (°C) Figure 14. Circuit-Breaker Trip Point and Current-Sense Voltage vs. Temperature Figure 13. Circuit Breaker Using RSENSE The fast-comparator trip current is determined by the selected RCB value and cannot be adjusted independently. The fast-comparator trip current is given by: ITRIPFAST = ICB x (RCBF + RCB) ± VCB ,OS RDS(ON)( T) RSENSE Mode When operating with R SENSE , calculate the circuitbreaker threshold using the worst possible operating conditions, and add a 20% overcurrent margin to the maximum circuit current. For example, with a maximum expected current of 2A, using a 20% margin, the current for calculation is (2A) x (1.2) = 2.4A. The resulting minimum circuit-breaker threshold is then a product of this current and RSENSE = 0.06Ω, or (0.06Ω) x (2.4A) = 0.144V. Using this method to choose a circuit-breaker threshold allows the circuit to operate under worst-case conditions without causing a circuit-breaker fault, but the circuit-breaker function will still detect a short-circuit or a gross overcurrent condition. Table 2. Programming the Temperature Coefficient (MAX5926) To determine the proper circuit-breaker resistor value, use the following equation, which refers to Figure 12: RCB = (ITRIPSLOW x RSENSE) + VCB ,OS ICB where ITRIPSLOW is the desired slow-comparator trip current. The fast-comparator trip current is determined by the selected RCB value and cannot be adjusted independently. The fast-comparator trip current is given by: ITRIPFAST = ICB x (RCBF + RCB) ± VCB ,OS RSENSE Table 3. Suggested External MOSFETs APPLICATION CURRENT (A) PART DESCRIPTION 1 International Rectifier IRF7401 SO-8 TC TCICB (ppm/°C) 2 Siliconix Si4378DY SO-8 High 0 5 Siliconix SUD40N02-06 DPAK Low 3300 10 Siliconix SUB85N02-03 D2PAK ______________________________________________________________________________________ 15 MAX5924/MAX5925/MAX5926 ILOAD RSENSE MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor Applications Information HIGH-CURRENT PATH Component Selection SENSE RESISTOR RCB MAX5924 MAX5925 MAX5926 Figure 15. Kelvin Connection for the Current-Sense Resistor Circuit-Breaker Temperature Coefficient In applications where the external MOSFET’s on-resistance is used as a sense resistor to determine overcurrent conditions, a 3300ppm/°C temperature coefficient is desirable to compensate for the RDS(ON) temperature coefficient. Use the MAX5926’s TC input to select the circuit-breaker programming current’s temperature coefficient, TCICB (see Table 2). The MAX5924 temperature coefficient is preset to 0ppm/°C, and the MAX5925’s is preset to 3300ppm/°C. Setting TCICB to 3300ppm/°C allows the circuit-breaker threshold to track and compensate for the increase in the MOSFET’s RDS(ON) with increasing temperature. Most MOSFETs have a temperature coefficient within a 3000ppm/°C to 7000ppm/°C range. Refer to the MOSFET data sheet for a device-specific temperature coefficent. RDS(ON) and ICB are temperature dependent, and can therefore be expressed as functions of temperature. At a given temperature, the MAX5925/MAX5926 indicate an overcurrent condition when: ITRIPSLOW x RDS(ON)(T) ≥ ICB(T) x RCB + |VCB,OS| where VCB,OS is the worst-case offset voltage. Figure 14 graphically portrays operating conditions for a MOSFET with a 4500ppm/°C temperature coefficient. n-Channel MOSFET Select the external n-channel MOSFET according to the application’s current and voltage level. Table 3 lists some recommended components. Choose the MOSFET’s on-resistance, RDS(ON), low enough to have a minimum voltage drop at full load to limit the MOSFET power dissipation. High RDS(ON) can cause undesired power loss and output ripple if the board has pulsing loads or triggers an external undervoltage reset monitor at full load. Determine the device power-rating requirement to accommodate a short circuit on the board at startup with the device configured in autoretry mode. Using the MAX5924/MAX5925/MAX5926 in latched mode allows the consideration of MOSFETs with higher RDS(ON) and lower power ratings. A MOSFET can typically withstand single-shot pulses with higher dissipation than the specified package rating. Low MOSFET gate capacitance is not necessary since the inrush current limiting is achieved by limiting the gate dv/dt. Table 4 lists some recommended manufacturers and components. Be sure to select a MOSFET with an appropriate gate drive (see the Typical Operating Characteristics). Typically, for VCC less than 3V or greater than 12V, select a 2.5V VGS MOSFET. Optional Sense Resistor Select the sense resistor in conjunction with RCB to set the slow and fast circuit-breaker thresholds (see the Selecting a Circuit-Breaker Threshold section). The sense-resistor power dissipation depends on the device configuration. If latched mode is selected, PRSENSE = (IOVERLOAD)2 x RSENSE; if autoretry is selected, then P RSENSE = (I OVERLOAD ) 2 x R SENSE x (t ON /t RETRY ). Choose a sense-resistor power rating of twice the PRSENSE for long-term reliable operation. In addition, ensure that the sense resistor has an adequate I2T rating to survive instantaneous short-circuit conditions. Table 4. Component Manufacturers COMPONENT Sense Resistors MOSFETs 16 MANUFACTURER PHONE Dale-Vishay 402-564-3131 www.vishay.com WEBSITE www.irctt.com IRC 828-264-8861 Fairchild 888-522-5372 www.fairchildsemi.com International Rectifier 310-233-3331 www.irf.com ______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor RCB = • Full-Load Current = 5A • No RSENSE • IINRUSH = 500mA Procedures: 1) Calculate the required slew rate and corresponding CSLEW: I V SR = INRUSH = 3.3 1000 × CL ms CSLEW = 330 × 10 −9 330 × 10 −9 = = 0.1µF SR 3.3 V ms 2) Select a MOSFET and determine the worst-case power dissipation. 3) Minimize power dissipation at full load current and at high temperature by selecting a MOSFET with an appropriate RDS(ON). Assume a 20°C temperature difference between the MAX5924/MAX5925/ MAX5926 and the MOSFET. For example, at room temperature the IRF7822’s RDS(ON) = 6.5mΩ. The temperature coefficient for this device is 4000ppm/°C. The maximum RDS(ON) for the MOSFET at TJ(MOSFET) = +105°C is: (ITRIPSLOW x RDS(ON)105 ICB85 ) + VCB,OS RCB = ((6A x 8.58mΩ) + 4.7mV)/69.5µA = 808Ω Layout Considerations Keep all traces as short as possible and maximize the high-current trace dimensions to reduce the effect of undesirable parasitic inductance. Place the MAX5924/ MAX5925/MAX5926 close to the card’s connector. Use a ground plane to minimize impedance and inductance. Minimize the current-sense resistor trace length (<10mm), and ensure accurate current sensing with Kelvin connections. When the output is short circuited, the voltage drop across the external MOSFET becomes large. Hence, the power dissipation across the switch increases, as does the die temperature. An efficient way to achieve good power dissipation on a surface-mount package is to lay out two copper pads directly under the MOSFET package on both sides of the board. Connect the two pads to the ground plane through vias, and use enlarged copper mounting pads on the top side of the board. It is important to maximize the thermal coupling between the MOSFET and the MAX5925/MAX5926 to balance the device junction temperatures. When the temperatures of the two devices are equal, the circuit-breaker trip threshold is most accurate. Keep the MOSFET and the MAX5925/MAX5926 as close to each other as possible to facilitate thermal coupling. ppm RDS(ON)105 = 6.5mΩ × 1 + (105°C − 25°C) × 4000 °C = 8.58mΩ Typical Operating Circuits (continued) The power dissipation in the MOSFET at full load is: 2 2 PD = I R = (5A) BACKPLANE × 8.58mΩ = 215mW VS 4) Select RCB. Since the MOSFET’s temperature coefficient is 4000ppm/°C, which is greater than TC ICB (3300ppm/°C), calculate the circuit-breaker threshold at high temperature so the circuit breaker is guaranteed not to trip at lower temperature during normal operation (Figure 15). ITRIPSLOW = IFULL LOAD + 20% = 5A + 20% = 6A RDS(ON)105 = 8.58mΩ (max), from step 2 ICB85 = 58µA x (1 + (3300ppm/°C x (85 - 25)°C) = 69.5µA (min) VCC TYPICAL OPERATION WITH RSENSE REMOVABLE CARD RSENSE 1V TO VCC N VOUT 2.25V TO 13.2V RCB CB SENSE GATE OUT VCC GND GND MAX5924 MAX5926 SEE FIGURE 2 FOR A DETAILED TYPICAL OPERATING CIRCUIT WITH RSENSE. ______________________________________________________________________________________ 17 MAX5924/MAX5925/MAX5926 Design Procedure Given: • VCC = VS = 5V • CL = 150µF MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor Selector Guide POWER-GOOD OUTPUT CIRCUIT-BREAKER TEMPCO (ppm/°C) FAULT MANAGEMENT PGOOD (OPEN-DRAIN) PGOOD (OPEN-DRAIN) MAX5924A 0 Latched ✓ — MAX5924B 0 Latched — ✓ MAX5924C 0 Autoretry ✓ — MAX5924D 0 Autoretry — ✓ MAX5925A 3300 Latched ✓ — MAX5925B 3300 Latched — ✓ MAX5925C 3300 Autoretry ✓ — MAX5925D 3300 Autoretry — ✓ 0 or 3300 (Selectable) Latched or Autoretry (Selectable) ✓ ✓ PART MAX5926 Pin Configurations TOP VIEW VCC 1 16 CB SC_DET 2 VCC 1 SC_DET 2 EN 3 PGOOD (PGOOD) GND 10 CB 9 SENSE 8 OUT 4 7 GATE 5 6 SLEW MAX5924 MAX5925 µMAX ( ) FOR THE MAX5924A, MAX5924C, MAX5925A, AND MAX5925C. 15 SENSE EN1 3 14 OUT PGOOD 4 GND 5 13 GATE MAX5926 12 SLEW EN2 6 11 N.C. PGOOD 7 10 N.C. LATCH 8 9 TC QSOP-EP Chip Information TRANSISTOR COUNT: 3751 PROCESS: BiCMOS 18 ______________________________________________________________________________________ 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor 10LUMAX.EPS e 4X S 10 INCHES 10 H 0 0.50±0.1 0.6±0.1 1 1 0.6±0.1 BOTTOM VIEW TOP VIEW D2 MILLIMETERS MAX DIM MIN 0.043 A 0.006 A1 0.002 A2 0.030 0.037 D1 0.116 0.120 0.114 0.118 D2 0.116 E1 0.120 E2 0.114 0.118 H 0.187 0.199 L 0.0157 0.0275 L1 0.037 REF b 0.007 0.0106 e 0.0197 BSC c 0.0035 0.0078 0.0196 REF S α 0° 6° MAX MIN 1.10 0.15 0.05 0.75 0.95 3.05 2.95 3.00 2.89 3.05 2.95 2.89 3.00 4.75 5.05 0.40 0.70 0.940 REF 0.177 0.270 0.500 BSC 0.090 0.200 0.498 REF 0° 6° E2 GAGE PLANE A2 c A b D1 FRONT VIEW A1 α E1 L L1 SIDE VIEW PROPRIETARY INFORMATION TITLE: PACKAGE OUTLINE, 10L uMAX/uSOP APPROVAL DOCUMENT CONTROL NO. 21-0061 REV. I 1 1 ______________________________________________________________________________________ 19 MAX5924/MAX5925/MAX5926 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) QSOP,EXP. PADS.EPS MAX5924/MAX5925/MAX5926 1V to 13.2V, n-Channel Hot-Swap Controllers Require No Sense Resistor PACKAGE OUTLINE, 16L QSOP, .150" EXPOSED PAD 21-0112 C 1 1 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 20 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2004 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.