INTEGRATED CIRCUITS 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state Product specification File under Integrated Circuits, IC06 1997 Nov 24 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns • Wide operating voltage : 2.0 to 6.0 V TYPICAL • Symmetrical output impedance SYMBOL • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 5 pins package tPHL/ tPLH input capacitance CPD power dissipation capacitance The bus driver output currents are equal compared to the 74HC/HCT126. FUNCTION TABLE INPUTS UNIT HC1G HCT1G 9 10 ns 1.5 1.5 pF 30 27 pF notes 1 and 2 Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; ∑ (CL × VCC2 × fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC − 1.5 V. PIN DESCRIPTION OUTPUT OE inA outY H L L H H H L X Z PIN NO. SYMBOL NAME AND FUNCTION 1, 2 OE, inA output enable input, data input 3 GND ground (0 V) 4 outY data output 5 VCC positive supply voltage H = HIGH voltage level L = LOW voltage level X = Don’t care Z = High impedance OFF state 1997 Nov 24 CONDITIONS CL = 15 pF VCC = 5 V inA to outY DESCRIPTION The 74HC1G/HCT1G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A LOW at OE causes the output as assume a high impedance OFF-state. propagation delay CI • Output capability : bus driver The 74HC1G/HCT1G126 is a highspeed Si-gate CMOS device. PARAMETER 2 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state ORDERING AND PACKAGE INFORMATION PACKAGES OUTSIDE NORTH AMERICA NORTH AMERICA TEMPERATURE RANGE 74HC1G126GW −40 °C to +125 °C 74HCT1G126GW OE 1 inA 2 PACKAGE MATERIAL plastic SOT353 HN 5 SC88A plastic SOT353 TN 4 outY Pin configuration. 2 inA 1 OE outY Fig.2 outY 4 OE Fig.3 1997 Nov 24 OE IEC logic symbol. Fig.4 3 4 Logic symbol. inA 1 MARKING SC88A 126 2 CODE 5 5 VCC GND 3 Fig.1 PINS Logic diagram. Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state RECOMMENDED OPERATING CONDITIONS 74HC1G SYMBOL 74HCT1G PARAMETER UNIT MIN. TYP. MAX. MIN. TYP. MAX. 2.0 5.0 6.0 4.5 5.0 5.5 V VCC DC supply voltage VI input voltage 0 − VCC 0 − VCC V VO output voltage 0 − VCC 0 − VCC V Tamb operating ambient temperature range −40 25 +125 −40 25 +125 °C − − 1000 − − − − − 500 − − 500 − − 400 − − − tr,tf input rise and fall times except for Schmitt-trigger inputs CONDIITIONS see DC and AC characteristics per device VCC = 2.0 V ns VCC = 4.5 V VCC = 6.0 V ABSOLUTE MAXIMUM RATINGS Limiting values is accordance with the Absolute Maximum Rating System (IEC 134). Voltages are referenced to GND (ground = 0 V) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V VCC DC supply voltage −0.5 +7.0 ±IIK DC input diode current VI < - 0.5 or VI > VCC + 0.5 V − 20 mA ±IOK DCoutput diode current VO < - 0.5 or VO > VCC + 0.5 V − 20 mA ±IO DC output source or sink current bus driver outputs − 0.5V < VO < VCC + 0.5 V − 35.0 mA ±ICC DC VCC or GND current for types with bus driver outputs − 70 mA Tstg storage temperature range −65 +150 °C − 200 mW PD power dissipation per package for temperature range: − 40 to + 125 °C 5 pins plastic SC88A above +55 °C derate linearly with 2.5 mW/K Notes 1. Stresses beyond those listed may cause permanent damage to the device. These are stress rating only and functional operation of the device at these or any other conditions beyond those under ‘recommended operating conditions’ is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 1997 Nov 24 4 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state DC CHARACTERISTICS FOR THE 74HC1G Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V) Tamb (°C) SYMBOL VIH VIL VOH VOH −40 to +85 PARAMETER HIGH level input voltage LOW level input voltage HIGH level output voltage; all outputs HIGH level output voltage; Bus driver outputs TEST CONDITIONS −40 to +125 MIN. TYP.(1) MAX. MIN. MAX. UNIT VCC (V) OTHER 1.5 1.2 − 1.5 − 3.15 2.4 − 3.15 − 4.2 3.2 − 4.2 − − 0.8 0.5 − 0.5 − 2.1 1.35 − 1.35 − 2.8 1.8 − 1.8 1.9 2.0 − 1.9 − 4.4 4.5 − 4.4 − 5.9 6.0 − 5.9 − 6.0 3.84 4.32 − 3.7 − 4.5 VI = VIH or VIL, −IO = 6.0 mA VI = VIH or VIL, −IO = 7.8 mA 2.0 V 4.5 6.0 2.0 V 4.5 6.0 2.0 V 4.5 V VI = VIH or VIL, −IO = 20 µA 5.34 5.81 − 5.2 − 6.0 − 0 0.1 − 0.1 2.0 − 0 0.1 − 0.1 − 0 0.1 − 0.1 6.0 LOW level output voltage; Bus driver outputs − 0.15 0.33 − 0.4 4.5 VI = VIH or VIL, IO = 6.0 mA − 0.16 0.33 − 0.4 6.0 VI = VIH or VIL, IO = 7.8 mA input leakage current − − 1.0 − 1.0 µA 6.0 VI = VCC or GND IOZ 3-state output OFF-state current − − 5 − 10 µA 6.0 VI = VIH or VIL, VO = VCC or GND ICC Quiescent supply current − − 10 − 20 µA 6.0 VI = VCC or GND, IO = 0 VOL VOL II LOW level output voltage; all outputs 4.5 V Note 1. All typical values are measured at Tamb = 25 °C. 1997 Nov 24 V 5 VI = VIH or VIL, IO = 20 µA Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state DC CHARACTERISTICS FOR THE 74HCT1G Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V.) Tamb (°C) SYMBOL −40 to +85 PARAMETER TEST CONDITIONS −40 to +125 MIN. TYP.(1) MAX. MIN. MAX. UNIT VCC (V) OTHER VIH HIGH level input voltage 2.0 1.6 − 2.0 − V 4.5 to 5.5 VIL LOW level input voltage − 1.2 0.8 − 0.8 V 4.5 to 5.5 VOH HIGH level output voltage; all outputs 4.4 4.5 − 4.4 − V 4.5 VI = VIH or VIL, −IO = 20 µA VOH HIGH level output voltage; Bus driver outputs 3.84 4.32 − 3.7 − V 4.5 VI = VIH or VIL, −IO = 6.0 mA VOL LOW level output voltage; all outputs − 0 0.1 − 0.1 V 4.5 VI = VIH or VIL, IO = 20 µA VOL LOW level output voltage; Bus driver outputs − 0.16 0.33 − 0.4 V 4.5 VI = VIH or VIL, IO = 6.0 mA input leakage current − − 1.0 − 1.0 µA 5.5 VI = VCC or GND IOZ 3-state output OFF-state current − − 5 − 10 µA 5.5 VI = VIH or VIL, VO = VCC or GND ICC Quiescent supply current − − 10 − 20 µA 5.5 VI = VCC or GND, IO = 0 ∆ICC Additional supply current per input − − 500 − 850 µA 4.5 to 5.5 II Note 1. All typical values are measured at Tamb = 25 °C. 1997 Nov 24 6 VI = VCC − 2.1, IO = 0 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state AC CHARACTERISTICS FOR 74HC1G126 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF Tamb (°C) SYMBOL −40 to +85 PARAMETER MIN. TYP.(1) tPHL/tPLH tPZH/tPZL tPHZ/tPLZ propagation delay inA to outY 3-state output enable time OE to outY 3-state output disable time OE to outY TEST CONDITIONS −40 to +125 MAX. MIN. MAX. − 24 125 − 150 − 10 25 − 30 − 9 21 − 26 − 24 155 − 190 − 10 31 − 38 − 8 26 − 32 − 16 155 − 190 − 12 31 − 38 − 11 26 − 32 UNIT VCC (V) WAVEFORMS 2.0 ns 4.5 see Fig.5 and Fig.7 6.0 2.0 ns 4.5 see Fig.6 and Fig.7 6.0 2.0 ns 4.5 see Fig.6 and Fig.7 6.0 Note 1. All typical values are measured at Tamb = 25 °C. AC CHARACTERISTICS FOR 74HCT1G126 GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF Tamb (°C) SYMBOL −40 to +85 PARAMETER TEST CONDITIONS −40 to +125 MIN. TYP.(1) MAX. MIN. MAX. UNIT VCC(V) WAVEFORMS tPHL/tPLH propagation delay inA to outY − 11 30 − 36 ns 4.5 see Fig.5 and Fig.7 tPZH/tPZL 3-state output enable time OE to outY − 10 35 − 42 ns 4.5 see Fig.6 and Fig.7 tPHZ/tPLZ 3-state output disable time OE to outY − 12 31 − 38 ns 4.5 see Fig.6 and Fig.7 Note 1. All typical values are measured at Tamb = 25 °C. 1997 Nov 24 7 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state AC WAVEFORMS VI inA INPUT GND VM(1) tPLZ tPZL VCC GND tPHL outY OUTPUT VM(1) OE INPUT VI OUTPUT LOW-to-OFF OFF-to-LOW tPLH VM(1) 10% tPZH tPHZ VM(1) 90% OUTPUT HIGH-to-OFF OFF-to-HIGH VM(1) GND output disabled output enabled (1) HC1G VM = 50 %; VI = GND to VCC HCT1G VM = 1.3 V; VI = GND to 3.0 V Fig.5 (1) HC1G VM = 50 %; VI = GND to VCC HCT1G VM = 1.3 V; VI = GND to 3.0 V The input (inA) to output (outY) propagation delays. Fig.6 The 3-state enable and disable times. VCC PULSE GENERATOR VI RL = 1 kΩ VO D.U.T. CL RT Test CL = Load capacitance including jig and probe capacitance (See AC Characteristics for values). RL = Load resistance.(See AC Characteristics for values). RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. 1997 Nov 24 Load circuitry for switching times. 8 S1 VCC Open 50 pF Definitions for test circuit ; Fig.7 output enabled tPLH/tPHL tPLZ/tPZL tPHZ/tPZH S1 Open VCC GND Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state PACKAGE OUTLINES 1997 Nov 24 9 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonally- opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. 1997 Nov 24 10 Philips Semiconductors Product specification 74HC1G126 74HCT1G126 Bus buffer/line driver; 3-state DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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