BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT–23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT–23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com Specification Features: 3 Cathode 225 mW Rating on FR–4 or FR–5 Board Zener Breakdown Voltage Range – 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model 3 1 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 2 SOT–23 CASE 318 STYLE 8 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL94 V–0 MARKING DIAGRAM MAXIMUM RATINGS Rating Total Power Dissipation on FR–5 Board, (Note 1.) @ TA = 25°C Derated above 25°C Thermal Resistance – Junction to Ambient Total Power Dissipation on Alumina Substrate, (Note 2.) @ TA = 25°C Derated above 25°C Thermal Resistance – Junction to Ambient Junction and Storage Temperature Range 1 Anode xxx Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RJA 417 °C/W TJ, Tstg –65 to +150 °C M • • • • • PD RJA xxx = Specific Device Code M = Date Code PD ORDERING INFORMATION Device Package Shipping BZX84CxxxLT1 SOT–23 3000/Tape & Reel BZX84CxxxLT3 SOT–23 10,000/Tape & Reel 1. FR–5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. †The “T1” suffix refers to an 8 mm, 7 inch reel. The “T3” suffix refers to an 8 mm, 13 inch reel. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 1 1 Publication Order Number: BZX84C2V4LT1/D BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF VZ C IF VZ VR IR VF IZT Maximum Temperature Coefficient of VZ Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) VZ1 (Volts) @ IZT1 = 5 mA (Note 3.) VZ2 (Volts) @ IZT2 = 1 mA (Note 3.) VZ3 (Volts) @ IZT3 = 20 mA (Note 3.) Device Device Marking Min Nom Max ZZT1 (Ohms) @ IZT1 = 5 mA Min Max ZZT2 (Ohms) @ IZT2 = 1 mA (Note 4.) Min Max ZZT3 (Ohms) @ IZT3 = 20 mA BZX84C2V4LT1 BZX84C2V7LT1 BZX84C3V0LT1 BZX84C3V3LT1 BZX84C3V6LT1 Z11 Z12 Z13 Z14 Z15 2.2 2.5 2.8 3.1 3.4 2.4 2.7 3 3.3 3.6 2.6 2.9 3.2 3.5 3.8 100 100 95 95 90 1.7 1.9 2.1 2.3 2.7 2.1 2.4 2.7 2.9 3.3 600 600 600 600 600 2.6 3 3.3 3.6 3.9 3.2 3.6 3.9 4.2 4.5 50 50 50 40 40 BZX84C3V9LT1 BZX84C4V3LT1 BZX84C4V7LT1 BZX84C5V1LT1 BZX84C5V6LT1 Z16 W9 Z1 Z2 Z3 3.7 4 4.4 4.8 5.2 3.9 4.3 4.7 5.1 5.6 4.1 4.6 5 5.4 6 90 90 80 60 40 2.9 3.3 3.7 4.2 4.8 3.5 4 4.7 5.3 6 600 600 500 480 400 4.1 4.4 4.5 5 5.2 4.7 5.1 5.4 5.9 6.3 BZX84C6V2LT1 BZX84C6V8LT1 BZX84C7V5LT1 BZX84C8V2LT1 BZX84C9V1LT1 Z4 Z5 Z6 Z7 Z8 5.8 6.4 7 7.7 8.5 6.2 6.8 7.5 8.2 9.1 6.6 7.2 7.9 8.7 9.6 10 15 15 15 15 5.6 6.3 6.9 7.6 8.4 6.6 7.2 7.9 8.7 9.6 150 80 80 80 100 5.8 6.4 7 7.7 8.5 BZX84C10LT1 BZX84C11LT1 BZX84C12LT1 BZX84C13LT1 BZX84C15LT1 Z9 Y1 Y2 Y3 Y4 9.4 10.4 11.4 12.4 14.3 10 11 12 13 15 10.6 11.6 12.7 14.1 15.8 20 20 25 30 30 9.3 10.2 11.2 12.3 13.7 10.6 11.6 12.7 14 15.5 150 150 150 170 200 BZX84C16LT1 BZX84C18LT1 BZX84C20LT1 BZX84C22LT1 BZX84C24LT1 Y5 Y6 Y7 Y8 Y9 15.3 16.8 18.8 20.8 22.8 16 18 20 22 24 17.1 19.1 21.2 23.3 25.6 40 45 55 55 70 15.2 16.7 18.7 20.7 22.7 17 19 21.1 23.2 25.5 200 225 225 250 250 Min Max ZZT2 Below @ IZT4 = 0.5 mA (Note 4.) 80 80 80 90 130 25 27.8 30.8 33.8 36.7 28.9 32 35 38 41 46 50 54 60 66 150 170 180 200 215 39.7 43.7 47.6 51.5 57.4 72 79 240 255 63.4 69.4 VZ1 Below @ IZT1 = 2 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA BZX84C27LT1 BZX84C30LT1 BZX84C33LT1 BZX84C36LT1 BZX84C39LT1 Y10 Y11 Y12 Y13 Y14 25.1 28 31 34 37 27 30 33 36 39 28.9 32 35 38 41 BZX84C43LT1 BZX84C47LT1 BZX84C51LT1 BZX84C56LT1 BZX84C62LT1 Y15 Y16 Y17 Y18 Y19 40 44 48 52 58 43 47 51 56 62 BZX84C68LT1 BZX84C75LT1 Y20 Y21 64 70 68 75 Device VZ2 Below @ IZT2 = 0.1 mA Max Reverse Leakage Current VZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 20 10 5 5 1 1 1 1 1 –3.5 –3.5 –3.5 –3.5 –3.5 0 0 0 0 0 450 450 450 450 450 30 30 15 15 10 3 3 3 2 1 1 1 2 2 2 –3.5 –3.5 –3.5 –2.7 –2.0 –2.5 0 0.2 1.2 2.5 450 450 260 225 200 6.8 7.4 8 8.8 9.7 6 6 6 6 8 3 2 1 0.7 0.5 4 4 5 5 6 0.4 1.2 2.5 3.2 3.8 3.7 4.5 5.3 6.2 7.0 185 155 140 135 130 9.4 10.4 11.4 12.5 13.9 10.7 11.8 12.9 14.2 15.7 10 10 10 15 20 0.2 0.1 0.1 0.1 0.05 7 8 8 8 10.5 4.5 5.4 6.0 7.0 9.2 8.0 9.0 10.0 11.0 13.0 130 130 130 120 110 15.4 16.9 18.9 20.9 22.9 17.2 19.2 21.4 23.4 25.7 20 20 20 25 25 0.05 0.05 0.05 0.05 0.05 11.2 12.6 14 15.4 16.8 10.4 12.4 14.4 16.4 18.4 14.0 16.0 18.0 20.0 22.0 105 100 85 85 80 VZ3 Below @ IZT3 = 10 mA Min Max ZZT3 Below @ IZT3 = 10 mA 300 300 325 350 350 25.2 28.1 31.1 34.1 37.1 29.3 32.4 35.4 38.4 41.5 45 50 55 60 70 46 50 54 60 66 375 375 400 425 450 40.1 44.1 48.1 52.1 58.2 46.5 50.5 54.6 60.8 67 72 79 475 500 64.2 70.3 73.2 80.2 IR A @ Max Reverse Leakage Current VZ (mV/k) Below @ IZT1 = 2 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 0.05 0.05 0.05 0.05 18.9 21 23.1 25.2 27.3 21.4 24.4 27.4 30.4 33.4 25.3 29.4 33.4 37.4 41.2 70 70 70 70 45 80 90 100 110 120 0.05 0.05 0.05 0.05 0.05 30.1 32.9 35.7 39.2 43.4 37.6 42.0 46.6 52.2 58.8 46.6 51.8 57.2 63.8 71.6 40 40 40 40 35 130 140 0.05 0.05 47.6 52.5 65.6 73.4 79.8 88.6 35 35 IR A @ 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C 4. The Zener impedance, ZZT2, for the 27 through 75 volt types is tested at 0.5 mA rather than the test current of 0.1 mA used for VZ2 http://onsemi.com 3 BZX84C2V4LT1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range –55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range –55°C to +150°C) 1000 IZ = 1 mA 100 TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE (Ω ) 1000 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 4 1.1 1.2 BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (µA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 5. Typical Capacitance 100 TA = 25°C 10 1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 Figure 6. Typical Leakage Current I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 100 20 10 10 1 0.1 0.01 12 TA = 25°C 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 5 90 BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–08 ISSUE AF A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE http://onsemi.com 6 BZX84C2V4LT1 Series Notes http://onsemi.com 7 BZX84C2V4LT1 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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