UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * VDS(V)=-25V * ID=-9 A * RDS(ON)<35 mΩ@ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ@ VGS =-10 V, ID =-9 A *Pb-free plating product number: UP2003L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UP2003-TN3-R UP2003L-TN3-R UP2003-TN3-T UP2003L-TN3-T Package TO-252 TO-252 www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S Packing Tape Reel Tube 1 of 5 QW-R502-202.B UP2003 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate Source voltage VGSS ±20 V Continuous Drain Current ID -9 A Pulsed Drain Current (Note 1) IDM -50 Power Dissipation PD 2.5 W Junction Temperature +150 TJ °C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP MAX 50 25 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain Source Leakage Current IDSS Gate-Body Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage On-State Drain Current (Note 2) IGSS VGS(TH) ID(ON) Drain-Source On-Resistance (Note 2) RDS(ON) TEST CONDITIONS MIN VGS =0 V, ID=-250µA VDS =-24 V, VGS =0 V VDS =-20 V, VGS =0 V VDS =0 V, VGS =±20V -25 VDS =VGS, ID =-250 µA VDS = -5V, VGS = -10V VGS =-4.5 V, ID =-7 A VGS =-10 V, ID =-9 A -1.0 -50 DYNAMIC PARAMETERS Input Capacitance CISS VDS =-15 V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 3) Gate to Source Charge QG VDS =-0.5V(BR)DSS, VGS =-10 V, Gate Charge at Threshold QGS ID =-9 A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS =-15V, ID≈-1A, VGS =-10V, Turn-OFF Delay Time tD(OFF) RGS =6Ω ,RL=1Ω Turn-ON Delay Time tD(ON) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Continuous Forward Current IS Diode Pulse Current (Note 1) ISM Forward Voltage (Note 2) VSD IF=IS, VGS=0 V Note: 1. Pulse width limited by maximum junction temperature. 2. Pulse test: Pulse Width ≤ 300μsec, Duty Cycle ≤ 2% 3. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT V -1 -10 ±100 -1.5 -3.0 25 15 35 20 1610 410 200 17 5 6 6.2 10 18 10 5 µA nA V A mΩ pF 24 nC 9.3 ns -2.1 -4 -1.2 A V 2 of 5 QW-R502-202.B UP2003 2.4 VGS=-3.5V 2.2 -4.0V 2.0 -4.5V 1.8 -5V 1.6 -6V 1.4 -7V 1.2 -10V 1.0 0.8 0 10 20 30 40 Drain Current,-ID (A) 50 1.6 On-Resistance vs. Junction Temperature ID=-9A VGS=-10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature (°С) Reverse Drain Current,-IS (A) Normalized Drain to Source On-Resistance, RDS(ON) (mΩ) On-Resistance vs. Drain Current and Gate Voltage Drain to Source On-Resistance, RDS(ON) (mΩ) Normalized Drain to Source On-Resistance, RDS(ON) (mΩ) Drain Current,-ID (A) TYPICAL CHARACTERISTICS Drain Current,-ID (A) Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-202.B UP2003 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) Gate-Charge Characteristics VDS=-5V ID=-9A Capacitance Characteristics 2500 8 f=1MHZ VGS=0V 2000 -10V 6 Capacitance (pF) Gate to Source Voltage,-VGS (V) 10 -15V 4 2 CISS 1500 1000 COSS 500 CRSS 0 0 0 100 6 12 18 24 Gate Charge,-QG (nC) 50 RDS(ON) Limited 1ms 10ms 40 1s 10s 30 DC 20 VGS=-10V Single Pulse θJA=125°С/W TA=25°С 1 10 Drain to Source Voltage,-VDS (V) 10 100 0 0.001 0.01 0.1 1 10 Pulse Width (s) 100 1000 Normalized Effective Transient Thermal Resistance,r(t) 0.1 0.1 30 Single Pulse θJA=125°С/W TA=25°С 100μs 100ms 1 5 10 15 20 25 Drain to Source Voltage,-VDS (V) Single Pulse Maximum Power Dissipationg Maximum Safe Operating Area 10 0.01 0 30 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-202.B UP2003 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-202.B