UNISONIC TECHNOLOGIES CO., LTD UT3403 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT3403 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities, operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. SYMBOL 3.Drain *Pb-free plating product number: UT3403L 2.Gate 1.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT3403-AE3-R UT3403L-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-145.A UT3403 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATING UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (Note 3) ID -2.6 A Pulsed Drain Current (Note 1) IDM -20 A Power Dissipation PD 1.4 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA Junction-to-Ambient MIN TYP 100 MAX 125 UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance (Note 2) SYMBOL TEST CONDITIONS BVDSS IDSS IGSS ID=-250µA, VGS=0V VDS=-24V, VGS=0V VDS=0V, VGS=±12V -30 VGS(TH) VDS=VGS, ID=-250µA VGS=-10V, ID=-2.6A VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A -0.6 RDS(ON) DYNAMIC PARAMETERS Input Capacitance CISS VGS =0V, VDS =-15V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time (Note 2) tD(ON) Turn-ON Rise Time tR VGS=-10V, VDS=-15V RL=6Ω, RG =3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VGS=-4.5V, VDS=-15V, Gate-Source Charge QGS ID=-2.5A Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD VGS=0V, IS=-1A Maximum Continuous Drain-Source Diode IS Forward Current Reverse Recovery Time tRR IF=-2.5A, dI/dt=100A/µs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤2%. 3. Surface mounted on 1 in2 copper pad of FR4 board UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -1 ±100 V µA nA -1 102 128 187 -1.4 130 180 260 V mΩ mΩ mΩ 409 55 42 500 pF pF pF 5.3 4.4 31.5 8 4.4 0.8 1.32 8 9 45 16 5.3 ns ns ns ns nC nC nC -0.85 -1 V -2 A 19 12 ns nC 15.8 8 2 of 4 QW-R502-145.A UT3403 Drain Current,-ID (A) TYPICAL CHARACTERISTICS Drain Current,-ID (A) Power MOSFET On-Resistance vs. Drain Current and Gate Voltage 250 VGS=-2.5V 500 200 Capacitance (pF) Drain to Source OnResistance,RDS(ON) (mΩ) Capacitance Characteristics 600 150 VGS=-4.5V CISS 400 300 200 100 COSS 100 VGS=-10V CRSS 0 50 0 1 2 3 4 5 6 0 Drain Current,-ID (A) On-Resistance vs. Gate-Source Voltage 1.0E+01 ID=-2A 250 Reverse Drain Current,-IS (A) Drain to Source OnResistance,RDS(ON) (mΩ) 300 200 125℃ 150 100 25℃ 50 0 0 2 4 6 8 Gate to Source Voltage,-VGS (V) 10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 10 15 20 25 Drain to Source Voltage,-VDS (V) 30 Body-Diode Characteristics 1.0E+00 125℃ 1.0E-01 1.0E-02 25℃ 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Body Diode Forward Voltage,-VSD (V) 3 of 4 QW-R502-145.A UT3403 TYPICAL CHARACTERISTICS(Cont.) Power (W) Gate to Source Voltage,-VGS (V) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-145.A