DATA SHEET LASER DIODE NX5302 Series 1 310 nm FOR 156 Mb/s, SHORT HAUL 622 Mb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5302 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, short haul and long haul STM-1, short haul STM-4, ITU-T recommendations. FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 10 mA • High speed tr = 0.15 ns MAX. tf = 0.3 ns MAX. • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Based on Telcordia reliability The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PL10079EJ02V0DS (2nd edition) Date Published July 2002 CP(K) Printed in Japan The mark • shows major revised points. NEC Corporation 2001 NEC Compound Semiconductor Devices 2002 NX5302 Series PACKAGE DIMENSIONS (UNIT: mm) NX5302S Series φ 5.6+0.00 –0.03 φ 4.2±0.1 φ 3.55±0.05 BOTTOM VIEW 1.0±0.1 1 110˚±2˚ 0.3+0.1 –0.0 2 3 PIN CONNECTIONS 0.3+0.1 –0.0 *1 0.33 0.25 φ 1.0 MIN. 0.25±0.03 (Glass) NX5302SH φ 1.6±0.1 NX5302SI 1 (Case) 1 (Case) LD LD 4 2 LD Chip Reference Plane 1.27±0.05 15.0±1.0 1.2±0.1 2.1±0.15 4 4 2 PD PD 3 3 NX5302SJ NX5302SK 1 (Case) 4– φ 0.45 1 (Case) LD LD 4 2 2 φ 2.0 P.C.D 4 PD PD 3 3 *1 n = 1.48 Bolosilicate Glass NX5302E Series φ 5.6+0.00 –0.03 φ 4.2±0.1 φ 3.55±0.1 BOTTOM VIEW 1 1.0±0.1 2 110˚±2˚ 0.3+0.1 –0.0 3 PIN CONNECTIONS 0.3+0.1 –0.0 Focal Point *2 2.97±0.2 NX5302EH ∆x = ±300 µ m ∆y = ±300 µ m 6.35±0.5 φ 2.0 NX5302EI 1 (Case) 1 (Case) LD LD 4 2 Reference Plane 4 2 PD 15.0±1.0 1.2±0.1 3.87±0.3 4 PD 3 3 NX5302EJ NX5302EK 1 (Case) 1 (Case) LD 4– φ 0.45 LD 4 2 2 4 φ 2.0 PD 3 *2 Focal Point: A point to get maximum optical output power from fiber. 2 Data Sheet PL10079EJ02V0DS PD 3 NX5302 Series ORDERING INFORMATION NX5302S Series Part Number NX5302SH Package Pin Connections 1 4-pin CAN with flat glass cap LD 4 2 PD 3 1 NX5302SI LD 4 2 PD 3 1 NX5302SJ LD 4 2 PD 3 1 NX5302SK LD 2 4 PD 3 NX5302E Series Part Number NX5302EH Package Pin Connections 1 4-pin CAN with spherical lens cap LD 4 2 PD 3 1 NX5302EI LD 4 2 PD 3 1 NX5302EJ LD 4 2 PD 3 1 NX5302EK LD 2 4 PD 3 Preliminary Data Sheet PL10079EJ02V0DS 3 NX5302 Series ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 10 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C Assembly Temperature Tasb 150 (15 Hr) °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit − 1.1 1.3 V − 10 20 mA TC = 85°C − 25 35 TC = −40 to +85°C, IF = Ith − 100 200 µW 0.4 0.5 − W/A −3.0 −1.5 − dB 1 263 − 1 360 nm TC = −40 to +85°C − 0.4 0.5 nm/°C σ Po = 5.0 mW, RMS (−20 dB) TC = −40 to +85°C − 1.0 2.5 nm θ⊥ Po = 5.0 mW, FAHM *2 − 25 40 deg. *2 − 20 35 deg. Operating Voltage Vop Threshold Current Ith Threshold Output Power Pth Differential Efficiency ηd Temperature Dependence of Differential Efficiency ∆ηd Center Wavelength λC Temperature Dependence of Center Wavelength Spectral Width *1 Vertical Beam Angle *1 ∆λ/∆T Conditions Po = 5.0 mW ∆ηd = 10 log ηd (@ 85°C) ηd (@ 25°C) Po = 5.0 mW, RMS (−20 dB) TC = −40 to +85°C Lateral Beam Angle θ// Po = 5.0 mW, FAHM Rise Time tr 10-90% − 0.05 0.15 ns Fall Time tf 90-10% − 0.15 0.3 ns Monitor Current Im VR = 5 V, Po = 5.0 mW 200 500 800 µA Monitor Dark Current ID VR = 5 V − 0.1 10 nA VR = 5 V, TC = −40 to +85°C − − 500 VR = 5 V, f = 1 MHz − 6 20 pF Monitor PD Terminal Capacitance Kink (Refer to DEFINITIONS) Tracking Error (Refer to DEFINITIONS) Ct kink Po = Up to 6.0 mW, TC = −40 to +85°C −20 − 20 % γ Im = const. (@ PO = 5.0 mW, TC = 25°C) TC = −40 to +85°C −1.0 − 1.0 dB *1 Applicable to only NX5302S Series *2 FAHM: Full Angle at Half Maximum 4 Data Sheet PL10079EJ02V0DS NX5302 Series PARAMETER DEFINITIONS Kink : kink Po kink = IF - P o (mW) 6.0 dPK × 100 [%] PK dPK = dPo MAX. dPo PK ≤ 6.0 (mW) dPK PK IF - η d IF 0 (mA) Tracking Error : γ Po γ = 10 log (mW) Po 5.0 [dB] TC = 25˚C 5.0 TC = –40 to +85˚C Po 0 Im Im (mA) Preliminary Data Sheet PL10079EJ02V0DS 5 NX5302 Series TYPICAL CHARACTERISTICS (TC = −40 to +85°°C) OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE +25˚ +85 ˚C C 100 Operating Current Iop (mA), Threshold Current Ith (mA) 7.5 TC = – Optical Output Power Po (mW) 10 40˚C OPTICAL OUTPUT POWER vs. FORWARD CURRENT 5.0 2.5 0 20 40 60 80 100 50 10 5 3 2 1 –60 –40 –20 Center Wavelength λC (nm) 1 340 1 320 1 300 1 280 20 40 60 80 100 Case Temperature TC (˚C) Remark The graphs indicate nominal characteristics. 6 0 20 40 60 Case Temperature TC (˚C) TEMPERATURE DEPENDENCE OF CENTER WAVELENGTH 0 Ith 20 Forward Current IF (mA) –60 –40 –20 Iop 30 Data Sheet PL10079EJ02V0DS 80 100 NX5302 Series TYPICAL CHARACTERISTICS (TC = 25°°C) OPTICAL OUTPUT POWER vs. MONITOR CURRENT FORWARD CURRENT vs. FORWARD VOLTAGE 10 Optical Output Power Po (mW) Forward Current IF (mA) 50 40 30 20 10 0 1 Monitor Current Im (µA) FAR FIELD PATTERN (θ //) (NX5302S SERIES ONLY) FAR FIELD PATTERN (θ ⊥) (NX5302S SERIES ONLY) 100 Intensity (%) Intensity (%) 1 500 1 000 Forward Voltage VF (V) 50 50 0 –40 40 0 40 0 Vertical Beam Angle θ ⊥ (deg.) SPECTRUM TOLERANCE OF FIBER COUPLING DISTANCE (Z) Otical Output Power from Fiber Pf (mW) Lateral Beam Angle θ // (deg.) Relative Intensity 1 300 500 0 2 100 0 –40 5 1 310 1 320 1.0 Z Pf 0.8 SMF Po = 5 mW 0.6 0.4 0.2 0.0 5.8 Wavelength λ (nm) 6.0 6.2 6.4 6.6 6.8 Z-Axis Tolerance Z (mm) Remark The graphs indicate nominal characteristics. Preliminary Data Sheet PL10079EJ02V0DS 7 NX5302 Series LD CAN PACKAGES FAMILY FOR OPTICAL FIBER COMMUNICATIONS Absolute Maximum Ratings Electro-Optical Characteristics @TC = 25°C @TC Part Number TC (°C) NX5302 Series −40 to +85 Tstg (°C) −40 to +85 λ (nm) Ith (mA) Po (mW) TYP. TYP. MIN. MAX. 10 5 1 263 1 360 Application 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1) Package CAN 622 Mb/s: STM-4 (I-4, S-4.1) NX6301 Series −40 to +85 −40 to +85 13 5 1 280 1 335 156 Mb/s: STM-1 CAN 622 Mb/s: STM-4 NX6504 Series −10 to +85 −40 to +85 12 5 1 530 1 570 156 Mb/s: STM-1 622 Mb/s: STM-4 8 Data Sheet PL10079EJ02V0DS CAN NX5302 Series REFERENCE Document Name Document No. Optical semiconducrtor devices for fiberoptic communications Selection Guide P12480E Opto-Electronics Devices Pamphlet P13623E Opto-Electronics Devices (CD-ROM) P12944X NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices *1 C11159E *1 SEMICONDUCTOR SELECTION GUIDE −Products and Packages− C11531E *1 X13769E *1 Published by NEC Corporation Preliminary Data Sheet PL10079EJ02V0DS 9 NX5302 Series • The information in this document is current as of July, 2002. The information is subject to change without notice. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 10 Data Sheet PL10079EJ02V0DS NX5302 Series SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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