AED-208-162A(Z) HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage VR 4.0 V Forward current IF 50 mA Peak forward current IFM 150 mA Junction temperature Tj 125 °C Lead temperature Tl * 230 °C Storage temperature Tstg -55 to +125 °C * Value at the nearest point from body for 10sec max. (one time) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 1.0 V I F= 50 mA Reverse voltage VR 4.0 — — V I R = 10 µA Capacitance C — — 0.4 pF Series resistance rs — — 1.3 Ω VR = 0 V, f = 1 MHz rs=50VF3 -150.75VF2 +100.75VF1 VF1: IF=1.0mA , VF2: IF=2.7mA VF3: IF=20mA ESD capability — 25 — — V * C= 25pF * Failure criterion ; I R ≥ 1µA at VR = 2V HSE11 10 -1 10 -2 10 10 Reverse current I R (A) Forward current I F (A) 10 -3 -4 10 10 10-11 10 -12 -13 10 0 0.6 0.2 0.4 0.8 Forward voltage VF (V) 1.0 Fig.1 Forward current Vs. Forward voltage 1.0 -1 10 -2 10 10-1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 0 2 8 6 4 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz Capacitance C (pF) -9 10-10 -5 10-6 -8 10 10 HSE11 1 .8 1.5 .6 2 .4 3 16GHz 4 12GHz .2 5 8GHz 10 4GHz .2 0 .4 1GHz .6 .8 1 1.5 2 3 4 5 10 –10 –5 –4 –.2 –3 1 2 3 4 6 8 –.4 –2 –.6 –.8 –1.5 –1 Fig.4 S Parameter (mA) (mA) (mA) (mA) (mA) (mA) Unit: mm Cathode Mark (Silver) 1 0.3 Package Dimensions 1.0 2 1.0 3.5 ± 0.15 0 ± 0.1 0.6 1 Cathode 2 Anode HITACHI Code ERP JEDEC Code — EIAJ Code — Weight (g) 0.002