Provisional Data Sheet No. PD-9.1395 IRHM9230 REPETETIVE AVALANCHE AND dv/dt RATED P-CHANNEL HEXFET® TRANSISTOR RAD HARD -200 Volt, 0.8Ω Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control,very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number BVDSS RDS(on) ID IRHM9230 -200V 0.8Ω -6.5A Features: ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets ■ Electrically Isolated Pre-Radiation Absolute Maximum Ratings Parameter IRHM9230 Units -6.5 -4.1 -26 A VGS EAS I AR Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current 75 0.2 ±20 330 -6.5 W W/K V mJ A EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt 7.5 -5.0 V/ns TJ TSTG Operating Junction Storage Temperature Range I D @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25°C Lead Temperature Weight Notes: See page 4 mJ -55 to 150 oC 300 (0.063 in. (1 .6mm) from case for 10s) 9.3 (typical) g IRHM9230 Device Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units -200 — — -0.10 — — -2.0 2.2 — — — — — — — — — — V V/°C Test Conditions VGS = 0V, I D = -1.0 mA Reference to 25°C, ID = -1.0 mA 0.8 VGS = -12V, I D = -4.1A 0.92 Ω VGS = -12V, I D = -6.5A -4.0 V VDS = VGS, ID = -1.0 mA — S( ) VDS > -15V, I DS = -6.5A -25 µA VDS = 0.8 x Max. Rating,VGS = 0V -250 VDS = 0.8 x Max. Rating VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V 35 VGS = -12V, I D = -6.5A nC 10 VDS = Max. Rating x 0.5 25 50 VDD = -100V, ID = -6.5A, RG = 2.35Ω 90 ns 90 90 Measured from the Modified MOSFET — Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 5.0 LS Internal Source Inductance — 15 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1100 310 55 — — — nH drain lead, 6mm (0.25 in.) from package to center of die. symbol showing the internal inductances. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. pF VGS = 0V, VDS = -25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter IS I SM VSD t rr QRR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units — — -6.5 — — -26 A Test Conditions Modified MOSFET symbol showing the integral Reverse p-n junction rectifier. — — -5.0 V Tj = 25°C, IS = -6.5A, VGS = 0V — — 400 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100 A/µs — — 3.0 µC VDD ≤ -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Notes: See page 4 Min. Typ. Max. Units — — — 30 1.67 K/W — Test Conditions IRHM9230 Device Radiation Characteristics Radiation Performance of P-Channel Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate Units Test Conditions min. max. -200 -2.0 — — — — — -4.0 -100 100 -25 0.8 nA µA Ω VGS = 0V, ID = -1.0 mA VGS = VDS, ID = -1.0 mA VGS = -20V VGS = 20V VDS = 0.8 x Max Rating, VGS = 0V VGS = -12V, ID = -4.1A — -5.0 V TC = 25°C, IS = -6.5A,VGS = 0V V Table 2. High Dose Rate 1011 Rads (Si)/sec1012 Rads (Si)/sec Parameter VDSS International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier PChannel radiation hardened HEXFETs have been characterized in heavy ion Single Event Effects environment and the results are shown in Table 3. IRHM9230 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage VSD High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. 100K Rads (Si) Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. Min. Typ Max. Min.Typ. Max. Units Drain-to-Source Voltage — IPP di/dt L1 — — 1 Table 3. Single Event Effects — -160 -100 — -800 — — — — — -160 — -100 — -160 20 — — — Test Conditions V Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/µsec Rate of rise of photo-current µH Circuit inductance required to limit di/dt Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS -200 V Ni 28 1 x 105 ~41 -200 5 IRHM9230 Device Repetitive Rating; Pulse width limited by maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -50V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = -6.5A, VGS = -12V, 25 ≤ RG ≤ 200 Ω ISD ≤ -6.5A, di/dt ≤ -140 A/µs, VDD ≤ BVDSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C Radiation Characteristics Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. Case Outline and Dimensions Optional leadforms for outline TO-254 LEGEND 1 DRAIN 2 SOURCE 3 GATE LEGEND 1 DRAIN 2 SOURCE 3 GATE NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and (Inches) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982 2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES) 3 LEADFORM IS AVAILABLE IN EITHER ORIENTATION: Example: 3.1 IRHM7160D 3.2 IRHM7160U CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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