Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1444A IRHF7310SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Ω, (SEE) RAD HARD HEXFET 400 Volt, 4.5Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHF7310SE BV DSS 400V RDS(on) 4.5Ω ID 1.15A Features: ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ V GS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range IRHF7310SE 1.15 0.70 4.6 15 2.0 ±20 75 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10 sec.) 0.98 (typical) Lead Temperature Weight To Order Units A W W/K ➄ V mJ V/ns o C g Previous Datasheet Index Next Data Sheet IRHF7310SE Device Pre-Radiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max. Units 400 — — 0.37 — — — — 2.5 0.2 — — — — — — — — 4.5 5.2 4.5 — 50 250 V V/°C IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance — — — — — — — — — — — — — — — — — — — 5.0 100 -100 10 3 6 15 20 35 30 — LS Internal Source Inductance — 15 — Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 215 65 — — — — Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25°C, ID = 1.0 mA nC VGS = 12V, ID = 0.7A ➃ VGS = 12V, I D = 1.15A VDS = VGS, ID = 1.0 mA VDS > 15V, IDS = 0.7A ➃ VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 1.15A VDS = Max. Rating x 0.5 ns VDD = 200V, ID = 1.15A, RG = 7.5Ω Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nH pF Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. VGS = 0V, VDS = 25V f = 1.0 MHz Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time — — — — 1.15 4.6 A Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25°C, IS = 1.15A, VGS = 0V ➃ Tj = 25°C, IF = 1.15A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. — — — — — — 1.4 540 4.5 V ns µC Thermal Resistance Parameter Min. Typ. Max. Units RthJC Junction-to-Case — — 8.3 RthJA Junction-to-Ambient — — 175 K/W➄ To Order Test Conditions Previous Datasheet Index Next Data Sheet IRHF7310SE Device Radiation Characteristics Radiation Performance of Rad Hard HEXFETs International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Table 1. Low Dose Rate ➅ ➆ Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance One Diode Forward Voltage ➃ Test Conditions ➉ Units 100K Rads (Si) min. VSD International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3. IRHF7310SE Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. max. 400 2.0 — — — — — 4.5 100 -100 50 6.5 nA µA Ω VGS = 0V, ID = 1.0 mA VGS = VDS , ID = 1.0 mA VGS = 20V VGS = -20V VDS = 0.8 x Max Rating, VGS = 0V VGS = 12V, ID = 0.6A — 1.4 V TC = 25°C, IS = 1.0A,VGS = 0V V Table 2. High Dose Rate ➇ 1011 Rads (Si)/sec 1012 Rads (Si)/sec Parameter VDSS Min. Typ Max. Min. Typ. Max. Units Test Conditions — — 320 — — 320 V Applied drain-to-source voltage during gamma-dot — — — — — — A Peak radiation induced photo-current — — — — — — A/µsec Rate of rise of photo-current 20 — — 137 — — µH Circuit inductance required to limit di/dt Drain-to-Source Voltage IPP di/dt L1 Table 3. Single Event Effects ➈ Parameter Typ. Units Ion LET (Si) (MeV/mg/cm2) Fluence (ions/cm2) Range (µm) VDS Bias (V) VGS Bias (V) BV DSS 400 V Ni 28 1 x 105 ~35 320 -5 To Order Previous Datasheet Index Next Data Sheet IRHF7310SE Device Radiation Characteristics ➀ Repetitive Rating; Pulse width limited by ➁ ➂ ➃ ➄ maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50V, Starting TJ = 25°C, EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)] Peak IL = 1.15A, VGS = 12V, 25 ≤ RG ≤ 200Ω ISD ≤ 1.15A, di/dt ≤ 40 A/µs, VDD ≤ BV DSS, TJ ≤ 150°C Suggested RG = 2.35Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% K/W = °C/W W/K = W/°C ➅ Total Dose Irradiation with VGS Bias. ➆ ➇ ➈ ➉ 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and V GS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications. 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