CY7C4421V/4201V/4211V/4221VCY7C4231V/4241V/4251VLow-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Featuresb • Space saving 32-pin 7 mm × 7 mm TQFP • 32-pin PLCC • High-speed, low-power, first-in, first-out (FIFO) memories • Available in Pb-Free Packages • 64 x 9 (CY7C4421V) Functional Description • 256 x 9 (CY7C4201V) The CY7C42X1V are high-speed, low-power, FIFO memories with clocked read and write interfaces. All are nine bits wide. Programmable features include Almost Full/Almost Empty flags. These FIFOs provide solutions for a wide variety of data buffering needs, including high-speed data acquisition, multiprocessor interfaces, and communications buffering. • 512 x 9 (CY7C4211V) • 1K x 9 (CY7C4221V) • 2K x 9 (CY7C4231V) • 4K x 9 (CY7C4241V) • 8K x 9 (CY7C4251V) These FIFOs have 9-bit input and output ports that are controlled by separate clock and enable signals. The input port is controlled by a Free-Running Clock (WCLK) and two Write Enable pins (WEN1, WEN2/LD). • High-speed 66-MHz operation (15-ns read/write cycle time) • Low power (ICC = 20 mA) • 3.3V operation for low power consumption and easy integration into low-voltage systems • 5V-tolerant inputs VIH max = 5V • Fully asynchronous and simultaneous read and write operation • Empty, Full, and Programmable Almost Empty and Almost Full status flags • TTL compatible • Output Enable (OE) pin • Independent read and write enable pins • Center power and ground pins for reduced noise When WEN1 is LOW and WEN2/LD is HIGH, data is written into the FIFO on the rising edge of the WCLK signal. While WEN1, WEN2/LD is held active, data is continually written into the FIFO on each WCLK cycle. The output port is controlled in a similar manner by a Free-Running Read Clock (RCLK) and two Read Enable Pins (REN1, REN2). In addition, the CY7C42X1V has an Output Enable Pin (OE). The Read (RCLK) and Write (WCLK) clocks may be tied together for single-clock operation or the two clocks may be run independently for asynchronous read/write applications. Clock frequencies up to 66 MHz are achievable. Depth expansion is possible using one enable input for system control, while the other enable is controlled by expansion logic to direct the flow of data. • Width expansion capability Logic Block Diagram Pin Configuration D0 − 8 D2 D3 D4 D5 D6 D7 D8 PLCC Top View INPUT REGISTER WCLK WEN1 WEN2/LD FLAG PROGRAM REGISTER WRITE CONTROL FLAG LOGIC Dual Port RAM Array 64 x 9 WRITE POINTER RS EF PAE PAF FF 4 3 2 1 32 3130 29 5 28 6 27 7 26 8 9 25 10 24 11 23 12 22 21 13 14151617181920 RS WEN1 WCLK WEN2/LD VCC Q8 Q7 Q6 Q5 EF FF Q0 Q1 Q2 Q3 Q4 D1 D0 PAF PAE GND REN1 RCLK REN2 OE READ POINTER 8Kx 9 RESET LOGIC THREE-STATE OUTPUTREGISTER READ CONTROL OE Q0 − 8 Cypress Semiconductor Corporation Document #: 38-06010 Rev. *B • RCLK REN1 REN2 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised July 14, 2005 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Selection Guide CY7C42X1V-15 Maximum Frequency CY7C42X1V-25 CY7C42X1V-35 Unit 66.7 40 28.6 MHz Maximum Access Time 11 15 20 ns Minimum Cycle Time 15 25 35 ns Minimum Data or Enable Set-up 4 6 7 ns Minimum Data or Enable Hold 1 1 2 ns Maximum Flag Delay 10 15 20 ns 20 20 20 mA Active Power Supply Current Commercial CY7C4421V CY7C4201V CY7C4211V CY7C4221V CY7C4231V CY7C4241V CY7C4251V 64 x 9 256 x 9 512 x 9 1K x 9 2K x 9 4K x 9 8K x 9 Density Pin Definitions Signal Name Description I/O Description D0−8 Data Inputs I Data Inputs for 9-bit bus. Q0−8 Data Outputs O Data Outputs for 9-bit bus. WEN1 Write Enable 1 I The only write enable when device is configured to have programmable flags. Data is written on a LOW-to-HIGH transition of WCLK when WEN1 is asserted and FF is HIGH. If the FIFO is configured to have two write enables, data is written on a LOW-to-HIGH transition of WCLK when WEN1 is LOW and WEN2/LD and FF are HIGH. WEN2/LD Dual Mode Pin Write Enable 2 I Load I If HIGH at reset, this pin operates as a second write enable. If LOW at reset, this pin operates as a control to write or read the programmable flag offsets. WEN1 must be LOW and WEN2 must be HIGH to write data into the FIFO. Data will not be written into the FIFO if the FF is LOW. If the FIFO is configured to have programmable flags, WEN2/LD is held LOW to write or read the programmable flag offsets. REN1, REN2 Read Enable Inputs I Enables the device for Read operation. WCLK Write Clock I The rising edge clocks data into the FIFO when WEN1 is LOW and WEN2/LD is HIGH and the FIFO is not Full. When LD is asserted, WCLK writes data into the programmable flag-offset register. RCLK Read Clock I The rising edge clocks data out of the FIFO when REN1 and REN2 are LOW and the FIFO is not Empty. When WEN2/LD is LOW, RCLK reads data out of the programmable flag offset register. EF Empty Flag O When EF is LOW, the FIFO is empty. EF is synchronized to RCLK. FF Full Flag O When FF is LOW, the FIFO is full. FF is synchronized to WCLK. PAE Programmable Almost Empty O When PAE is LOW, the FIFO is almost empty based on the almost empty offset value programmed into the FIFO. PAF Programmable Almost Full O When PAF is LOW, the FIFO is almost full based on the almost full offset value programmed into the FIFO. RS Reset I Resets device to empty condition. A reset is required before an initial read or write operation after power-up. OE Output Enable I When OE is LOW, the FIFO’s data outputs drive the bus to which they are connected. If OE is HIGH, the FIFO’s outputs are in High Z (high-impedance) state. Functional Description (continued) The CY7C42X1V provides four status pins: Empty, Full, Almost Empty, Almost Full. The Almost Empty/Almost Full flags are programmable to single word granularity. The programmable flags default to Empty-7 and Full-7. The flags are synchronous, i.e., they change state relative to either the Read Clock (RCLK) or the Write Clock (WCLK). Document #: 38-06010 Rev. *B When entering or exiting the Empty and Almost Empty states, the flags are updated exclusively by the RCLK. The flags denoting Almost Full and Full states are updated exclusively by WCLK. The synchronous flag architecture guarantees that the flags maintain their status for at least one cycle All configurations are fabricated using an advanced 0.65µ P-Well CMOS technology. Input ESD protection is greater than 2001V, and latch-up is prevented by the use of guard rings. Page 2 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Architecture The CY7C42X1V consists of an array of 64 to 8K words of nine bits each (implemented by a dual-port array of SRAM cells), a read pointer, a write pointer, control signals (RCLK, WCLK, REN1, REN2, WEN1, WEN2, RS), and flags (EF, PAE, PAF, FF.) Resetting the FIFO Upon power-up, the FIFO must be reset with a Reset (RS) cycle. This causes the FIFO to enter the Empty condition signified by EF being LOW. All data outputs (Q0-8) go LOW tRSF after the rising edge of RS. In order for the FIFO to reset to its default state, a falling edge must occur on RS and the user must not read or write while RS is LOW. All flags are guaranteed to be valid tRSF after RS is taken LOW. FIFO Operation When the WEN1 signal is active LOW and WEN2 is active HIGH, data present on the D0-8 pins is written into the FIFO on each rising edge of the WCLK signal. Similarly, when the REN1 and REN2 signals are active LOW, data in the FIFO memory will be presented on the Q0-8 outputs. New data will be presented on each rising edge of RCLK while REN1 and REN2 are active. REN1 and REN2 must set up tENS before RCLK for it to be a valid read function. WEN1 and WEN2 must occur tENS before WCLK for it to be a valid write function. An Output Enable (OE) pin is provided to three-state the Q0-8 outputs when OE is asserted. When OE is enabled (LOW), data in the output register will be available to the Q0-8 outputs after tOE. The FIFO contains overflow circuitry to disallow additional writes when the FIFO is full, and underflow circuitry to disallow additional reads when the FIFO is empty. An empty FIFO maintains the data of the last valid read on its Q0-8 outputs even after additional reads occur. Write Enable 1 (WEN1). If the FIFO is configured for programmable flags, Write Enable 1 (WEN1) is the only write enable control pin. In this configuration, when Write Enable 1 (WEN1) is LOW, data can be loaded into the input register and RAM array on the LOW-to-HIGH transition of every write clock (WCLK). Data is stored is the RAM array sequentially and independently of any on-going read operation. Document #: 38-06010 Rev. *B Write Enable 2/Load (WEN2/LD). This is a dual-purpose pin. The FIFO is configured at Reset to have programmable flags or to have two write enables, which allows for depth expansion. If Write Enable 2/Load (WEN2/LD) is set active HIGH at Reset (RS=LOW), this pin operates as a second write enable pin. If the FIFO is configured to have two write enables, when Write Enable (WEN1) is LOW and Write Enable 2/Load (WEN2/LD) is HIGH, data can be loaded into the input register and RAM array on the LOW-to-HIGH transition of every write clock (WCLK.) Data is stored in the RAM array sequentially and independently of any on-going read operation. Programming When WEN2/LD is held LOW during Reset, this pin is the load (LD) enable for flag offset programming. In this configuration, WEN2/LD can be used to access the four 8-bit offset registers contained in the CY7C42X1V for writing or reading data to these registers. When the device is configured for programmable flags and both WEN2/LD and WEN1 are LOW, the first LOW-to-HIGH transition of WCLK writes data from the data inputs to the empty offset Least Significant Bit (LSB) register. The second, third, and fourth LOW-to-HIGH transitions of WCLK store data in the empty offset Most Significant Bit (MSB) register, full offset LSB register, and full offset MSB register, respectively, when WEN2/LD and WEN1 are LOW. The fifth LOW-to-HIGH transition of WCLK while WEN2/LD and WEN1 are LOW writes data to the empty LSB register again. Figure 1 shows the register sizes and default values for the various device types. It is not necessary to write to all the offset registers at one time. A subset of the offset registers can be written; then by bringing the WEN2/LD input HIGH, the FIFO is returned to normal read and write operation. The next time WEN2/LD is brought LOW, a write operation stores data in the next offset register in sequence. The contents of the offset registers can be read to the data outputs when WEN2/LD is LOW and both REN1 and REN2 are LOW. LOW-to-HIGH transitions of RCLK read register contents to the data outputs. Writes and reads should not be performed simultaneously on the offset registers. Page 3 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V 64 x 9 8 256 x 9 0 6 Empty Offset (LSB) Reg. Default Value = 007h 8 Empty Offset (LSB) Reg. Default Value = 007h 0 8 1K x 9 0 7 8 Empty Offset (LSB) Reg. Default Value = 007h 0 8 512 x 9 0 7 8 Empty Offset (LSB) Reg. Default Value = 007h 0 8 0 7 (MSB) 0 8 0 6 0 7 8 Full Offset (LSB) Reg Default Value = 007h 8 Full Offset (LSB) Reg Default Value = 007h 0 8 Full Offset (LSB) Reg Default Value = 007h 0 8 0 7 8 Full Offset (LSB) Reg Default Value = 007h 0 8 (MSB) 00 0 7 8 7 8 Empty Offset (LSB) Reg. Default Value = 007h 0 7 0 8 Full Offset (LSB) Reg Default Value = 007h (MSB) 00000 0 7 8 Full Offset (LSB) Reg Default Value = 007h 0 2 8 (MSB) 000 0 7 Full Offset (LSB) Reg Default Value = 007h 0 3 0 4 8 (MSB) 0000 7 8 0 7 Empty Offset (LSB) Reg. Default Value = 007h 0 3 8 (MSB) 000 8 8 Empty Offset (LSB) Reg. Default Value = 007h 0 2 8 (MSB) 00 8K x 9 4K x 9 0 0 1 8 (MSB) 0 2K x 9 0 1 8 8 (MSB) 0000 0 4 (MSB) 00000 Figure 1. Offset Register Location and Default Values Programmable Flag (PAE, PAF) Operation Whether the flag offset registers are programmed as described in Table 1 or the default values are used, the programmable Almost Empty Flag (PAE) and programmable Almost Full Flag (PAF) states are determined by their corresponding offset registers and the difference between the read and write pointers. Table 1. Writing the Offset Registers WCLK[1] LD WEN Selection 0 0 Empty Offset (LSB) Empty Offset (MSB) Full Offset (LSB) Full Offset (MSB) 0 1 No Operation 1 0 Write Into FIFO 1 1 No Operation The number formed by the empty offset least significant bit register and empty offset most significant register is referred to as n and determines the operation of PAE. PAE is synchronized to the LOW-to-HIGH transition of RCLK by one flip-flop and is LOW when the FIFO contains n or fewer unread words. PAE is set HIGH by the LOW-to-HIGH transition of RCLK when the FIFO contains (n+1) or greater unread words. The number formed by the full offset least significant bit register and full offset most significant bit register is referred to as m and determines the operation of PAF. PAE is synchronized to the LOW-to-HIGH transition of WCLK by one flip-flop and is set LOW when the number of unread words in the FIFO is greater than or equal to CY7C4421V (64 – m), CY7C4201V (256 – m), CY7C4211V (512 – m), CY7C4221V (1K – m), CY7C4231V (2K – m), CY7C4241V (4K – m), and CY7C4251V (8K – m). PAF is set HIGH by the LOW-to-HIGH transition of WCLK when the number of available memory locations is greater than m. Note: 1. The same selection sequence applies to reading from the registers. REN1 and REN2 are enabled and a read is performed on the LOW-to-HIGH transition of RCLK. Document #: 38-06010 Rev. *B Page 4 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Table 2. Status Flags Number of Words in FIFO CY7C4421V CY7C4201V CY7C4211V FF PAF PAE EF 0 0 0 H H L L 1 to n[2] 1 to n[2] 1 to n[2] H H L H (n+1) to 32 (n+1) to 128 (n+1) to 256 H H H H 33 to (64−(m+1)) 129 to (256−(m+1)) 257 to (512−(m+1)) H H H H (64−m)[3] to 63 (256−m)[3] to 255 (512−m)[3] to 511 H L H H 64 256 512 L L H H Number of Words in FIFO CY7C4221V 0 1 to CY7C4231V 0 n[2] CY7C4241V 0 [2] CY7C4251V 0 [2] [2] FF PAF PAE EF H H L L 1 to n 1 to n 1 to n H H L H (n+1) to 1024 (n+1) to 2048 (n+1) to 4096 H H H H 513 to (1024 −(m+1)) 1025 to (2048 −(m+1)) 2049 to (4096 −(m+1)) 4097 to (8192 −(m+1)) H H H H (1024−m)[3] to 1023 (2048−m)[3] to 2047 (4096−m)[3] to 4095 (8192−m)[3] to 8191 H L H H 1024 2048 4096 8192 L L H H (n+1) to 512 Width Expansion Configuration Flag Operation Word width may be increased simply by connecting the corresponding input control signals of multiple devices. A composite flag should be created for each of the end-point status flags (EF and FF). The partial status flags (PAE and PAF) can be detected from any one device. Figure 2 demonstrates a 18-bit word width by using two CY7C42X1Vs. Any word width can be attained by adding additional CY7C42X1Vs. The CY7C42X1 devices provide four flag pins to indicate the condition of the FIFO contents. Empty, Full, PAE, and PAF are synchronous. When the CY7C42X1V is in a Width Expansion Configuration, the Read Enable (REN2) control input can be grounded (see Figure 2). In this configuration, the Write Enable 2/Load (WEN2/LD) pin is set to LOW at Reset so that the pin operates as a control to load and read the programmable flag offsets. Full Flag The Full Flag (FF) will go LOW when device is full. Write operations are inhibited whenever FF is LOW regardless of the state of WEN1 and WEN2/LD. FF is synchronized to WCLK, i.e., it is exclusively updated by each rising edge of WCLK. Empty Flag The Empty Flag (EF) will go LOW when the device is empty. Read operations are inhibited whenever EF is LOW, regardless of the state of REN1 and REN2. EF is synchronized to RCLK, i.e., it is exclusively updated by each rising edge of RCLK. Notes: 2. n = Empty Offset (n=7 default value). 3. m = Full Offset (m=7 default value). Document #: 38-06010 Rev. *B Page 5 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V RESET (RS) DATA IN (D) 18 RESET (RS) 9 9 READ CLOCK (RCLK) WRITE CLOCK (WCLK) READ ENABLE 1 (REN1) WRITE ENABLE 1 (WEN1) OUTPUT ENABLE (OE) WRITE ENABLE 2/LOAD (WEN2/LD) CY7C42X1V PROGRAMMABLE (PAF) FULL FLAG (FF) # 1 CY7C42X1V PROGRAMMABLE (PAE) EMPTY FLAG (EF) #1 EF EMPTY FLAG (EF) #2 EF FF FF 9 FULL FLAG (FF) # 2 DATA OUT (Q) 18 9 Read Enable 2 (REN2) Read Enable 2 (REN2) Figure 2. Block Diagram of 64 x 9, 256 x 9, 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 Low-Voltage Synchronous FIFO Memory Used in a Width-Expansion Configuration Document #: 38-06010 Rev. *B Page 6 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Maximum Ratings Output Current into Outputs (LOW)............................. 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ...................................–65°C to +150°C Ambient Temperature with Power Applied............................................. –-55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +5.0V DC Voltage Applied to Outputs in High-Z State ............................................... –0.5V to +5.0V Static Discharge Voltage........................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... > 200 mA Operating Range Range Ambient Temperature VCC 0°C to +70°C 3.3V ± 300 mV –40° to +85°C 3.3V ± 300 mV Commercial Industrial DC Input Voltage............................................ –0.5V to +5.0V Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 7C42X1V-15 7C42X1V-25 7C42X1V-35 Min. Min. Min. Max. 2.4 Max. VOH Output HIGH Voltage VCC = Min., IOH = −2.0 mA 2.4 VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage 2.0 5.0 2.0 5.0 VIL Input LOW Voltage −0.5 0.8 −0.5 IIX Input Leakage Current VCC = Max. −10 +10 IOZL IOZH Output OFF, High Z Current OE > VIH, VSS < VO < VCC −10 +10 ICC[4] Active Power Supply Current Com’l 20 ISB[5] Average Standby Current Com’l 6 0.4 Max. 2.4 Unit V 0.4 0.4 V 2.0 5.0 V 0.8 −0.5 0.8 V −10 +10 −10 +10 µA −10 +10 −10 +10 µA 20 20 mA 6 6 mA Capacitance[6] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. TA = 25°C, f = 1 MHz, VCC = 5.0V Unit 5 pF 7 pF AC Test Loads and Waveforms[7, 8] R1 = 330Ω ALL INPUT PULSES 3.3V OUTPUT 3.0V CL R2 = 510Ω INCLUDING JIG AND SCOPE Equivalent to: THÉVENIN EQUIVALENT Rth = 200Ω OUTPUT GND ≤ 3 ns 90% 10% 90% 10% ≤ 3 ns Vth = 2.0V Notes: 4. Outputs open. Tested at Frequency = 20 MHz. 5. All inputs = VCC – 0.2V, except WCLK and RCLK, which are switching at 20 MHz. 6. Tested initially and after any design or process changes that may affect these parameters. 7. CL = 30 pF for all AC parameters except for tOHZ. 8. CL = 5 pF for tOHZ. Document #: 38-06010 Rev. *B Page 7 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Characteristics Over the Operating Range Parameter Description 7C42X1V-15 7C42X1V-25 7C42X1V-35 Min. Min. Min. Max. 66.7 Max. Unit 28.6 MHz 20 ns Clock Cycle Frequency tA Data Access Time 2 tCLK Clock Cycle Time 15 tCLKH Clock HIGH Time 6 10 14 ns tCLKL Clock LOW Time 6 10 14 ns tDS Data Set-Up Time 4 6 7 ns tDH Data Hold Time 1 2 2 ns tENS Enable Set-Up Time 4 6 7 ns tENH Enable Hold Time 1 2 2 ns tRS Reset Pulse Width[9] 15 25 35 ns tRSS Reset Set-Up Time 10 15 20 ns tRSR Reset Recovery Time 10 tRSF Reset to Flag and Output Time tOLZ Output Enable to Output in Low Z[10] 0 tOE Output Enable to Output Valid 3 tOHZ Output Enable to Output in High Z[10] 3 tWFF Write Clock to Full Flag tREF tPAF tPAE Clock to Programmable Almost-Full Flag tSKEW1 Skew Time between Read Clock and Write Clock for Empty Flag and Full Flag 6 10 12 ns tSKEW2 Skew Time between Read Clock and Write Clock for Almost-Empty Flag and Almost-Full Flag 15 18 20 ns 11 40 Max. tS 2 15 25 15 18 2 35 20 25 0 8 3 8 3 ns ns 35 ns 15 ns 0 12 3 12 3 ns 15 ns 11 15 20 ns Read Clock to Empty Flag 11 15 20 ns Clock to Programmable Almost-Full Flag 16 22 25 ns 25 ns 16 22 Notes: 9. Pulse widths less than minimum values are not allowed. 10. Values guaranteed by design, not currently tested. Document #: 38-06010 Rev. *B Page 8 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms Write Cycle Timing tCLK tCLKH tCLKL WCLK tDS tDH D0 –D8 tENS tENH WEN1 NO OPERATION NO OPERATION WEN2 (if applicable) tWFF tWFF FF tSKEW1 [11] RCLK REN1,REN2 Read Cycle Timing tCKL tCLKH tCLKL RCLK tENS tENH REN1,REN2 NO OPERATION tREF tREF EF tA Q0 –Q8 VALID DATA tOLZ tOHZ tOE OE tSKEW1 [12] WCLK WEN1 WEN2 Notes: 11. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that FF will go HIGH during the current clock cycle. If the time between the rising edge of RCLK and the rising edge of WCLK is less than tSKEW1, then FF may not change state until the next WCLK rising edge. 12. tSKEW1 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that EF will go HIGH during the current clock cycle. It the time between the rising edge of WCLK and the rising edge of RCLK is less than tSKEW1, then EF may not change state until the next RCLK rising edge. Document #: 38-06010 Rev. *B Page 9 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) Reset Timing[13] RS tRS REN1, REN2 tRSS tRSR tRSS tRSR tRSS tRSR WEN1 WEN2/LD [15] tRSF EF,PAE tRSF FF,PAF, tRSF Q0 − Q8 OE=1 [14] OE=0 Notes: 13. The clocks (RCLK, WCLK) can be free-running during reset. 14. After reset, the outputs will be LOW if OE = 0 and three-state if OE=1. 15. Holding WEN2/LD HIGH during reset will make the pin act as a second enable pin. Holding WEN2/LD LOW during reset will make the pin act as a load enable for the programmable flag offset registers. Document #: 38-06010 Rev. *B Page 10 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) First Data Word Latency after Reset with Simultaneous Read and Write WCLK tDS D0 –D8 D0 (FIRSTVALID WRITE) D1 D2 D3 [17] tA D4 tENS tFRL WEN1 [16] WEN2 (if applicable) tSKEW1 RCLK tREF EF tA REN1, REN2 Q0 –Q8 D0 tOLZ D1 tOE OE Notes: 16. When tSKEW1 > minimum specification, tFRL (maximum) = tCLK + tSKEW1. When tSKEW1 < minimum specification, tFRL (maximum) = either 2*tCLK + tSKEW1 or tCLK + tSKEW1. The Latency Timing applies only at the Empty Boundary (EF = LOW). 17. The first word is available the cycle after EF goes HIGH, always. Document #: 38-06010 Rev. *B Page 11 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) Empty Flag Timing WCLK tDS tDS DATAWRITE2 DATAWRITE1 D0 –D8 tENH WEN1 tENH tENS tENS tENS tENH tENS tENH WEN2 (if applicable) tFRL [16] tFRL [16] RCLK tSKEW1 tREF tREF tREF tSKEW1 EF REN1, REN2 LOW OE tA Q0 –Q8 DATA IN OUTPUT REGISTER Document #: 38-06010 Rev. *B DATA READ Page 12 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) Full Flag Timing NO WRITE NO WRITE NO WRITE WCLK tSKEW1 [11] tSKEW1 [11] tDS DATA WRITE DATA WRITE D0 –D8 tWFF tWFF tWFF FF WEN1 WEN2 (if applicable) RCLK tENS REN1, REN2 OE tENH tENS LOW tA Q0 –Q8 tENH tA DATA READ DATA IN OUTPUT REGISTER NEXT DATA READ Programmable Almost Empty Flag Timing tCLKL tCLKH WCLK tENS tENH WEN1 WEN2 (if applicable) tENS tENH Note 19 PAE N + 1 WORDS INFIFO tSKEW2 [18] tPAE Note 20 tPAE RCLK tENS tENS tENH REN1, REN2 Notes: 18. tSKEW2 is the minimum time between a rising WCLK and a rising RCLK edge for PAE to change state during that clock cycle. If the time between the edge of WCLK and the rising RCLK is less than tSKEW2, then PAE may not change state until the next RCLK. 19. PAE offset = n. 20. If a read is performed on this rising edge of the read clock, there will be Empty + (n−1) words in the FIFO when PAE goes LOW. Document #: 38-06010 Rev. *B Page 13 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) Programmable Almost Full Flag Timing Note 21 tCLKL tCLKH WCLK tENS tENH WEN1 [22] WEN2 (if applicable) tPAF tENS tENH PAF FULL − M WORDS IN FIFO [23] FULL − (M+1) WORDS IN FIFO tSKEW2 [24] tPAF RCLK tENS tENS tENH REN1, REN2 Write Programmable Registers tCLK tCLKL tCLKH WCLK tENS tENH WEN2/LD tENS WEN1 tDS tDH D0 –D8 PAE OFFSET LSB PAE OFFSET MSB PAF OFFSET LSB PAF OFFSET MSB Notes: 21. If a write is performed on this rising edge of the write clock, there will be Full – (m–1) words of the FIFO when PAF goes LOW. 22. PAF offset = m. 23. 64–m words for CY7C4421V, 256-m words in FIFO for CY7C4201V, 512–m words for CY7C4211V, 1024–m words for CY7C4221V, 2048–m words for CY7C4231V, 4096–m words for CY7C4241V, 8192–m words for CY7C4251V. 24. tSKEW2 is the minimum time between a rising RCLK edge and a rising WCLK edge for PAF to change during that clock cycle. If the time between the rising edge of RCLK and the rising edge of WCLK is less than tSKEW2, then PAF may not change state until the next WCLK. Document #: 38-06010 Rev. *B Page 14 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Switching Waveforms (continued) Read Programmable Registers tCLK tCLKL tCLKH RCLK tENS tENH WEN2/LD tENS PAF OFFSET MSB REN1, REN2 tA UNKNOWN Q0 –Q8 PAE OFFSET LSB PAE OFFSET MSB PAF OFFSET LSB Ordering Information 256 x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name Package Type CY7C4201V-15AC A32 32-Lead Thin Quad Flatpack CY7C4201V-15AXC A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4201V-25AC A32 32-Lead Thin Quad Flatpack Operating Range Commercial Commercial 512 x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name CY7C4211V-15AC Package Type A32 32-Lead Thin Quad Flatpack CY7C4211V-15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C4211V-15AI A32 32-Lead Thin Quad Flatpack CY7C4211V-15AXI A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4211V-25AC A32 32-Lead Thin Quad Flatpack CY7C4211V-25JC J65 32-Lead Plastic Leaded Chip Carrier Operating Range Commercial Industrial Commercial 1K x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name CY7C4221V-15AC Package Type A32 32-Lead Thin Quad Flatpack CY7C4221V-15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C4221V-25AC A32 32-Lead Thin Quad Flatpack Operating Range Commercial Commercial 2K x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name Package Type CY7C4231V-15AC A32 32-Lead Thin Quad Flatpack CY7C4231V-15JXC J65 32-Lead Pb-Free Plastic Leaded Chip Carrier CY7C4231V-15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C4231V-25AXC A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4231V-25AC A32 32-Lead Thin Quad Flatpack CY7C4231V-25JC J65 32-Lead Plastic Leaded Chip Carrier Document #: 38-06010 Rev. *B Operating Range Commercial Commercial Page 15 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Ordering Information (continued) 4K x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name Package Type CY7C4241V-15AC A32 32-Lead Thin Quad Flatpack CY7C4241V-15AXC A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4241V-15JXC J65 32-Lead Pb-Free Plastic Leaded Chip Carrier CY7C4241V-15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C4241V-25AC A32 32-Lead Thin Quad Flatpack CY7C4241V-25AXC A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4241V-25JC J65 32-Lead Plastic Leaded Chip Carrier Operating Range Commercial Commercial 8K x 9 Low Voltage Synchronous FIFO Speed (ns) 15 25 Ordering Code Package Name Package Type CY7C4251V-15AC A32 32-Lead Thin Quad Flatpack CY7C4251V-15AXC A32 32-Lead Pb-Free Thin Quad Flatpack CY7C4251V-15JC J65 32-Lead Plastic Leaded Chip Carrier CY7C4251V-25AC A32 32-Lead Thin Quad Flatpack CY7C4251V-25AXC A32 32-Lead Pb-Free Thin Quad Flatpack Operating Range Commercial Commercial Package Diagrams 32-Lead Thin Plastic Quad Flatpack 7 x 7 x 1.0 mm A32 32-Lead Pb-Free Thin Plastic Quad Flatpack 7 x 7 x 1.0 mm A32 51-85063-*B Document #: 38-06010 Rev. *B Page 16 of 18 CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Package Diagrams (continued) 32-Lead Plastic Leaded Chip Carrier J65 32-Lead Pb-Free Plastic Leaded Chip Carrier J65 51-85002-*B All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-06010 Rev. *B Page 17 of 18 © Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C4421V/4201V/4211V/4221V CY7C4231V/4241V/4251V Document History Page Document Title: CY7C4421V/4201V/4211V/4221V/CY7C4231V/4241V/4251V Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Document Number: 38-06010 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 106471 09/10/01 SZV Change from Spec number: 38-00622 to 38-06010 *A 127857 08/25/03 FSG Fixed empty flag timing diagram Fixed switching waveform diagram typo *B 384573 See ECN ESH Added Pb-Free logo to top of front page Inserted industrial temperature range into operating range Added parts CY7C4251V-25AXC, CY7C4251V-15AXC, CY7C4241V-15AXC, CY7C4241V-15JXC, CY7C4241V-25XC, CY7C4231V-25AXC, CY7C4221V-15AI, CY7C4211V-15AXI, CY7C4201V-15AXC to ordering information. Document #: 38-06010 Rev. *B Page 18 of 18