Power Charge Pump and Low Drop Voltage Regulator TLE 4307 Power Charge Pump Circuit Features • • • • High Current Capability Short Circuit Protection Overtemperature Protection Active Zener Circuit P-TO252-5-1 Very Low Drop Voltage Regulator Features • • • • • 3.3 V or 3.8 V output voltage Low Output Voltage Tolerance High Current Capability 800 mA Short Circuit Protection Overtemperature Protection General Features • • Optimized SMD Package Industrial type P-TO252-5-11 Functional Description The TLE 4307 is a monolithic integrated power charge pump with a Low Drop Voltage Regulator. The power charge pump loads an energy storage capacitor at pin C. The voltage regulator supplies 3.3 V or 3.8 V out of this storage capacitor with up to 800 mA output current. The TLE 4307 is intended for use with DC supplies for consumer or industrial applications. Type Ordering Code Package TLE 4307 DV33 Q67006-A9444 P-TO252-5-1, P-TO252-5-11 TLE 4307 DV38 Q67006-A9415 P-TO252-5-1, P-TO252-5-11 Data Sheet 1 Rev. 1.2, 2004-01-01 TLE 4307 P-TO252-5-1 P-TO252-5-11 GND I C SL Q AEP02792 Figure 1 Pin Configuration (top view) Table 1 Pin Definitions and Functions Pin No. Symbol Function 1 I Input; Connect to the input voltage source 2 C Charge-Pump Output; Connect to the energy reservoir capacitor to GND 3 GND Ground 4 SL Slewrate Control Input; a capacitor from this pin to the Input pin I controls the slewrate during recirculation 5 Q Regulator Output; connect to GND with a capacitor as specified for CQ Data Sheet 2 Rev. 1.2, 2004-01-01 TLE 4307 TLE 4307 I SL 1 Power Charge Pump Very Low-Drop Regulator 5 Q 4 2 C 3 GND AES02793 Figure 2 Block Diagram Circuit Description The TLE 4307 consists of 2 stages, the charge pump and the very low drop voltage regulator. Charge Pump The power stage is used as a switching element, that is driven by a buffer. A current source keeps the power stage on. When the output C of the charge pump reaches VC,off, the power stage is switched off. It is active clamped, when the input I reaches VI,cl. Optional, an external capacity can be connected between pin SL and I to limit the slew rate at the input, when an inductive load drives the IC. Saturation control as a function of the load current prevents any oversaturation of the power element. The regulator is additionally protected against overload and overtemperature. Very Low Drop Regulator The control amplifier compares a reference voltage, made highly accurate by resistance balancing, with a voltage proportional to the output voltage and drives the base of the series PNP transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The regulator is additionally protected against overload and overtemperature. Data Sheet 3 Rev. 1.2, 2004-01-01 TLE 4307 VLine Vac = 12 V LS = 4 mH RS = 15 Ω TLE 4307 4x1N4001 D1 or B40C800 I 1 CS 100 pF Power Charge Pump VOUT = 3.8 V IOUT = 0.4 A Very 5 Q Low-Drop Regulator SL 4 CQ1 CC 2 C 3 GND 220 nF CQ2 22 µF 6.3 V 470 µF 15 V AES02794 Figure 3 Application Example Application Description The IC is meant to be used with a DC power supply. The power charge pump limits the energy that is needed to drive the load at the output Q of the IC. The energy is stored to a capacity CC, connected to pin C. When pin C reaches VC,off, the power charge pump is switched off. Since the power supply consists of the inductance and a parasitic series resistance, the remaining available energy is dissipated in the external power supply and therefore does not stress the IC with this dispensable energy. The very low drop regulator is provided with the energy, stored in CC. The regulator requires an output capacitor CQ for the stability of the regulating circuit. Stability is guaranteed at values above 22 µF and an ESR ≤ 1 Ω within the operating temperature range. Data Sheet 4 Rev. 1.2, 2004-01-01 TLE 4307 Table 2 Absolute Maximum Ratings Parameter Symbol Limit Values Min. Max. -0.3 VICL Unit Notes V VICL = Zener Input Input voltage VI clamp voltage Input current (during pump cycle) II -5 – mA internally limited Input current (during active Zener operation) II -5 1000 mA tp < 1 ms; duty cycle 10% Charge-Pump Output Voltage Current VC IC -0.3 20 V – – – mA internally limited VSL ISL -0.3 4.0 V – -0.5 0.5 mA – VQ IQ -0.3 25 V – – – mA internally limited Tj TStg -40 150 °C – -50 150 °C – Rthj-a Rthj-c – 70 K/W – – 4 K/W – VESD -2 2 kV HBM Model Slewrate Input Voltage Current Regulator Output Voltage Current Temperature Junction temperature Storage temperature Thermal Data Junction-ambient ESD All pins to GND Data Sheet 5 Rev. 1.2, 2004-01-01 TLE 4307 Table 3 Operating Range Parameter Input voltage Output current Junction temperature Data Sheet Symbol VI II Tj Limit Values Unit Notes Min. Max. 0 VICL V – 0 600 mA – -40 150 °C – 6 Rev. 1.2, 2004-01-01 TLE 4307 Table 4 Electrical Characteristics VI = 12 V; 40 °C < Tj < 150 °C, all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified. Parameter Symbol Limit Values Min. Typ. Max. Unit Measuring Condition Current consumption; Iq = II - IQ Iq – 1.2 2.5 mA Current consumption; Iq,10 – 1.4 3.0 mA Iq,250 – 4 10 mA VC,off VI,cl IC,max VDR025 VDR06 VDR07 7.7 8.2 8.7 V – 21 23 25 V 0.7 1.2 1.6 A – 0.8 1.1 V – 1.2 1.5 V – 1.4 2.0 V II = 250 mA VC = 5 V IC = 0.25 A IC = 0.6 A IC = 0.7 A Output voltage VQ 3.7 3.8 3.9 V 0 < IQ < 250 mA; TLE 4307 DV38 Output voltage VQ 3.2 3.3 3.4 V 0 < IQ < 250 mA; TLE 4307 DV33 Current limit IQ,max VDR025 VDR06 VDR08 VDR 0.8 1.2 1.6 A – – 0.2 0.4 V – 0.4 0.7 V – 1.0 2.0 V – 1.1 1.3 V IQ = 0,25 A1) IQ = 0.6 A1) IQ = 0.8 A1) IQ = 0.25 A1) Load regulation ∆VQLO – 20 40 mV 200 mA < IQ < 600 mA Line regulation ∆VQLI – – 20 mV 5 V < VC < 8.7 V; IQ = 10 mA Iq = II - IQ Current consumption; Iq = II - IQ IQ = 0 mA; VI = 6 V IQ = 10 mA; VI = 6 V IQ = 250 mA; VI = 6 V Charge Pump Switch off threshold Input Clamp Voltage Current limit Drop voltage; VI - VC Drop voltage; VI - VC Drop voltage; VI - VC Main-Regulator Drop voltage; VC - VQ Drop voltage; VC - VQ Drop voltage; VC - VQ Over all Drop voltage; VI - VQ Data Sheet 7 Rev. 1.2, 2004-01-01 TLE 4307 Table 4 Electrical Characteristics (cont’d) VI = 12 V; 40 °C < Tj < 150 °C, all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified. Parameter Symbol Limit Values Min. Typ. Max. Unit Measuring Condition Power Supply Ripple rejection PSRR -40 – – dB fr = 100 Hz; Vr = 0.5 Vpp Output Capacitor CQ 22 – – µF ESR < 1 Ω RSL 60 120 200 kΩ VSL = 0.2 V Slewrate Input Input Resistance 1) Drop Voltage measured when the output voltage has dropped 100 mV from the nominal value. TLE 4307 VIN = 12 V RV LV 10 Ω 1 mH I 1 CS Power Charge Pump VOUT = 3.8 V Very 5 Q Low-Drop Regulator 100 pF SL 4 2 C 3 GND CC CQ 470 µF 22 µF AES02795 Figure 4 Data Sheet Measurement Circuit 8 Rev. 1.2, 2004-01-01 TLE 4307 Package Outlines 2.3 +0.05 -0.10 A 0.9 +0.08 -0.04 1 ±0.1 0...0.15 0.51 min 0.15 max per side B 5.4 ±0.1 0.8 ±0.15 (4.17) 9.9 ±0.5 6.22 -0.2 1 ±0.1 6.5 +0.15 -0.10 0.5 +0.08 -0.04 5x0.6 ±0.1 1.14 4.56 0.1 0.25 M A B GPT09161 All metal surfaces tin plated, except area of cut. Figure 5 P-TO252-5-1 (Plastic Transistor Single Outline) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 9 Rev. 1.2, 2004-01-01 TLE 4307 6.5 +0.15 -0.05 A 1) 2.3 +0.05 -0.10 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 0.51 MIN. 0.15 MAX. per side B (5) 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.7 MAX. 5 x 0.6 ±0.1 0.5 +0.08 -0.04 1.14 4.56 0.1 B 0.25 M A B 1) Includes mold flashes on each side. All metal surfaces tin plated, except area of cut. GPT09527 Figure 6 P-TO252-5-11 (Plastic Transistor Single Outline) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 10 Rev. 1.2, 2004-01-01 Edition 2004-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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