HT2201 CMOS 1K 2-Wire Serial EEPROM Features · Operating voltage: 2.2V~5.5V · Automatic erase-before-write operation · Low power consumption · Write operation with built-in timer - Operation: 5mA max. - Standby: 4mA max. · 40-year data retention · 106 erase/write cycles per word · Internal organization: 128´8 · Industrial temperature range (-40°C to +85°C) · 2-wire serial interface · 4-pin SIP, SOT-25 package · Write cycle time: 5ms max. General Description The HT2201 is a 1K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 1024 bits of memory are organized into 128 words and each word is 8 bits. The device is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. The HT2201 is guaranteed for 1 million erase/write cycles and 40-year data retention. Block Diagram Pin Assignment H V P u m p 4 1 2 3 N C P a g e B u f 5 G N D H T 2 2 0 1 4 S IP -A C 4 S C L E E P R O M A rra y E 3 G N D D M e m o ry C o n tro l L o g ic V C C X 2 S C L 1 S D A S D A I/O C o n tro l L o g ic S D A V C C S C L H T 2 2 0 1 S O T -2 5 -A Y D E C A d d re s s C o u n te r S e n s e A M P R /W C o n tro l V C C V S S Pin Description Pin Name I/O SDA I/O SCL I VSS ¾ Negative power supply, ground VCC ¾ Positive power supply Rev. 1.20 Description Serial data inputs/output Serial clock data input 1 January 6, 2006 HT2201 Absolute Maximum Ratings Supply Voltage ..........................VSS-0.3V to VSS+6.0V Storage Temperature ............................-50°C to 125°C Input Voltage .............................VSS-0.3V to VCC+0.3V Operating Temperature...........................-40°C to 85°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Symbol Parameter Ta=-40°C~85°C Test Conditions VCC Conditions ¾ Min. Typ. Max. Unit 2.2 ¾ 5.5 V 2 mA VCC Operating Voltage ¾ ICC1 Operating Current 5V Read at 100kHz ¾ ¾ ICC2 Write at 100kHz ¾ ¾ 5 mA V Operating Current 5V VIL Input Low Voltage ¾ ¾ -1 ¾ 0.3VCC VIH Input High Voltage ¾ ¾ 0.7VCC ¾ VCC+0.5 V VOL Output Low Voltage 2.4V IOL=2.1mA ¾ ¾ 0.4 V ILI Input Leakage Current 5V VIN=0 or VCC ¾ ¾ 1 mA ILO Output Leakage Current 5V VOUT=0 or VCC ¾ ¾ 1 mA ISTB1 Standby Current 5V VIN=0 or VCC ¾ ¾ 4 mA ISTB2 Standby Current 2.4V VIN=0 or VCC ¾ ¾ 3 mA CIN Input Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 6 pF COUT Output Capacitance (See Note) ¾ f=1MHz 25°C ¾ ¾ 8 pF Note: These parameters are periodically sampled but not 100% tested Rev. 1.20 2 January 6, 2006 HT2201 A.C. Characteristics Symbol Ta=-40°C~85°C Parameter Remark Standard Mode* VCC=5V±10% Min. Max. Min. Max. Unit fSK Clock Frequency ¾ ¾ 100 ¾ 400 kHz tHIGH Clock High Time ¾ 4000 ¾ 600 ¾ ns tLOW Clock Low Time ¾ 4700 ¾ 1200 ¾ ns tr SDA and SCL Rise Time Note ¾ 1000 ¾ 300 ns tf SDA and SCL Fall Time Note ¾ 300 ¾ 300 ns tHD:STA START Condition Hold Time After this period the first clock pulse is generated 4000 ¾ 600 ¾ ns tSU:STA START Condition Setup Time Only relevant for repeated START condition 4000 ¾ 600 ¾ ns tHD:DAT Data Input Hold Time ¾ 0 ¾ 0 ¾ ns tSU:DAT Data Input Setup Time ¾ 200 ¾ 100 ¾ ns tSU:STO STOP Condition Setup Time ¾ 4000 ¾ 600 ¾ ns tAA Output Valid from Clock ¾ ¾ 3500 ¾ 900 ns tBUF Bus Free Time Time in which the bus must be free before a new transmission can start 4700 ¾ 1200 ¾ ns tSP Input Filter Time Constant (SDA and SCL Pins) Noise suppression time ¾ 100 ¾ 50 ns tWR Write Cycle Time ¾ ¾ 5 ¾ 5 ms Note: These parameters are periodically sampled but not 100% tested * The standard mode means VCC=2.2V to 5.5V For relative timing, refer to timing diagrams Rev. 1.20 3 January 6, 2006 HT2201 Functional Description · Serial clock (SCL) The next three bits are fixed to zeros. The SCL input is used for positive edge clock data into each EEPROM device and negative edge clock data out of each device. The 8th bit of device address is the read/write operation select bit. A read operation is initiated if this bit is high and a write operation is initiated if this bit is low. · Serial data (SDA) 1 The SDA pin is bidirectional for serial data transfer. The pin is open-drain driven and may be wired-OR with any number of other open-drain or open collector devices. 0 1 0 0 0 0 R /W D e v ic e A d d r e s s Write Operations · Byte write Memory Organization A write operation requires an 8-bit data word address following the device address word and acknowledgment. Upon receipt of this address, the EEPROM will again respond with a zero and then clock in the first 8-bit data word. After receiving the 8-bit data word, the EEPROM will output a zero and the addressing device, such as a microcontroller, must terminate the write sequence with a stop condition. At this time the EEPROM enters an internally-timed write cycle to the non-volatile memory. All inputs are disabled during this write cycle and EEPROM will not respond until the write is completed (refer to Byte write timing). · HT2201, 1K-bit serial EEPROM Internally organized with 128´8-bit words, the HT2201 requires an 8-bit data word address for random word addressing. Device Operations · Clock and data transition Data transfer may be initiated only when the bus is not busy. During data transfer, the data line must remain stable whenever the clock line is high. Changes in data line while the clock line is high will be interpreted as a START or STOP condition. · Acknowledge polling · Start condition To maximise bus throughput, one technique is to allow the master to poll for an acknowledge signal after the start condition and the control byte for a write command have been sent. If the device is still busy implementing its write cycle, then no ACK will be returned. The master can send the next read/write command when the ACK signal has finally been received. A high-to-low transition of SDA with SCL high is a start condition which must precede any other command (refer to Start and Stop Definition Timing diagram). · Stop condition A low-to-high transition of SDA with SCL high is a stop condition. After a read sequence, the stop command will place the EEPROM in a standby power mode (refer to Start and Stop Definition Timing Diagram). · Read operations The HT2201 supports three read operations, namely, current address read, random address read and sequential read. During read operation execution, the read/write select bit should be set to ²1². · Acknowledge All addresses and data words are serially transmitted to and from the EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has received each word. This happens during the ninth clock cycle. S e n d W r ite C o m m a n d S e n d S to p C o n d itio n to In itia te W r ite C y c le D a ta a llo w e d to c h a n g e S D A S e n d S ta rt S C L S ta rt c o n d itio n A d d re s s o r a c k n o w le d g e v a lid N o A C K s ta te S to p c o n d itio n S e n d C o tr o ll B y te w ith R /W = 0 Device Addressing (A C K = 0 )? The HT2201 requires an 8-bit device address word following a start condition to enable the chip for a read or write operation. The device address word consist of a mandatory one, zero sequence for the first four most significant bits (refer to the diagram showing the Device Address). This is common to all the EEPROM device. Rev. 1.20 N o Y e s N e x t O p e r a tio n Acknowledge Polling Flow 4 January 6, 2006 HT2201 · Current address read dition. The microcontroller now initiates a current address read by sending a device address with the read/write select bit high. The EEPROM acknowledges the device address and serially clocks out the data word. The microcontroller should respond with a ²no ACK² signal (high) followed by a stop condition. (refer to Random read timing). The internal data word address counter maintains the last address accessed during the last read or write operation, incremented by one. This address stays valid between operations as long as the chip power is maintained. The address roll over during read from the last byte of the last memory page to the first byte of the first page. The address roll over during write from the last byte of the current page to the first byte of the same page. Once the device address with the read/write select bit set to one is clocked in and acknowledged by the EEPROM, the current address data word is serially clocked out. The microcontroller should respond a No ACK (High) signal and following stop condition (refer to Current read timing). · Sequential read Sequential reads are initiated by either a current address read or a random address read. After the microcontroller receives a data word, it responds with an acknowledgment. As long as the EEPROM receives an acknowledgment, it will continue to increment the data word address and serially clock out sequential data words. When the memory address limit is reached, the data word address will roll over and the sequential read continues. The sequential read operation is terminated when the microcontroller responds with a ²no ACK² signal (high) followed by a stop condition. · Random read A random read requires a dummy byte write sequence to load in the data word address which is then clocked in and acknowledged by the EEPROM. The microcontroller must then generate another start conD e v ic e a d d r e s s S D A W o rd a d d re s s D A T A S P R /W S ta rt A C K A C K A C K S to p Byte Write Timing D e v ic e a d d r e s s S D A D A T A S to p S P S ta rt A C K N o A C K Current Read Timing D e v ic e a d d r e s s W o rd a d d re s s D e v ic e a d d r e s s S S D A D A T A S S ta rt A C K S to p P A C K S ta rt A C K N o A C K Random Read Timing D e v ic e a d d r e s s S D A D A T A n D A T A n + 1 S S ta rt D A T A n + x S to p P A C K N o A C K A C K Sequential Read Timing Rev. 1.20 5 January 6, 2006 HT2201 Timing Diagrams tf tr tL S C L tS U S D A :S tH T A tS tH IG H D O W :S T A tH D :D A T tS :D U A T tS U tB U F :S T O P tA S D A A V a lid O U T V a lid S C L S D A 8 th b it A C K W o rd n tW S to p C o n d itio n R S ta rt C o n d itio n Note: The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the valid start condition of sequential command. Rev. 1.20 6 January 6, 2006 HT2201 Package Information 4-Pin SIP Outline Dimensions A B D C E F G Symbol Rev. 1.20 H Dimensions in mil Min. Nom. Max. A 203 ¾ 208 B 141 ¾ 146 C 543 ¾ 583 D 13 ¾ 17 E 148 ¾ 152 F 48 ¾ 52 G 27 ¾ 30 H 59 ¾ 63 7 January 6, 2006 HT2201 SOT-25 Outline Dimensions D C L H E G e A A 2 b Symbol Rev. 1.20 A 1 Dimensions in mm Min. Nom. Max. A 1 ¾ 1.3 A1 ¾ ¾ 0.1 A2 0.7 ¾ 0.9 b 0.35 ¾ 0.5 C 0.1 ¾ 0.25 D 2.7 ¾ 3.1 E 1.4 ¾ 1.8 e ¾ 1.9 ¾ H 2.6 ¾ 3 L 0.37 ¾ ¾ q 1° ¾ 9° 8 January 6, 2006 HT2201 Product Tape and Reel Specifications Reel Dimensions D T 2 A C B T 1 SOT-25 Symbol Description Dimensions in mm A Reel Outer Diameter 178±1 B Reel Inner Diameter 62±1 C Spindle Hole Diameter 13±0.2 D Key Slit Width 2.5±0.25 T1 Space Between Flange 8.4+1.5 T2 Reel Thickness 11.4+1.5 Rev. 1.20 9 January 6, 2006 HT2201 Carrier Tape Dimensions P 0 D P 1 t E F W C D 1 B 0 P K 0 A 0 SOT-25 Symbol Description Dimensions in mm W Carrier Tape Width P Cavity Pitch E Perforation Position F Cavity to Perforation (Width Direction) 3.5±0.05 D Perforation Diameter 1.5+0.1 D1 Cavity Hole Diameter 1.5+0.1 P0 Perforation Pitch 4 P1 Cavity to Perforation (Length Direction) 2 A0 Cavity Length 3.15 B0 Cavity Width 3.2 K0 Cavity Depth 1.4 t Carrier Tape Thickness C Cover Tape Width Rev. 1.20 8±0.3 4 1.75 0.2±0.03 5.3 10 January 6, 2006 HT2201 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 43F, SEG Plaza, Shen Nan Zhong Road, Shenzhen, China 518031 Tel: 0755-8346-5589 Fax: 0755-8346-5590 ISDN: 0755-8346-5591 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holmate Semiconductor, Inc. (North America Sales Office) 46712 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com Copyright Ó 2006 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek¢s products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.20 11 January 6, 2006