MIMIX 44MPA0478

43.5-46.5 GHz GaAs MMIC
Power Amplifier
44MPA0478
April 2005 - Rev 01-Apr-05
Features
Chip Device Layout
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Excellent Saturated Output Stage
Balanced Design Provides Good Input/Output Match
14.0 dB Small Signal Gain
+29 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
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Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
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Mimix Broadband's three stage balanced 43.5 - 46.5
GHz GaAs MMIC power amplifier has a small signal
gain of 14.0 dB with a +29.0 dBm P1dB output
compression point. The device also includes lange
couplers to achieve good input and output return
loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
+6.0 VDC
2360 mA
+0.3 VDC
+23 dBm
-65 to +165 OC
-55 to MTTF Table1
MTTF Table 1
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
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Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB) 2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
Min.
43.5
-1.0
-
Typ.
25.0
25.0
14.0
+/-1.0
45.0
+29.0
+5.0
-0.5
1440
Max.
46.5
+5.5
0.0
2160
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
43.5-46.5 GHz GaAs MMIC
Power Amplifier
44MPA0478
April 2005 - Rev 01-Apr-05
Power Amplifier Measurements
44MPA0478 Vd = 5V, Id1=Id2=360mA, Id3=720mA
44MPA0478 Vd = 5V, Id1=Id2=360mA, Id3=720mA
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
44MPA0478 Vd = 5V, Id1=Id2=360mA, Id3=720mA
-5
-10
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Input and Output Return Losses (dB)
0
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Gain(dB)
44MPA0478 Vd = 5V, Id1=Id2=360mA, Id3=720mA
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30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
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Reverse Isolation (dB)
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-15
-20
-25
-30
-35
-40
-45
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
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30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Frequency (GHz)
0478_wafer sweep: Pout vs Freq at Pin = 20dBm
33
32.5
32
31.5
30
PoutCorr
Pr
31
30.5
29.5
29
28.5
28
27.5
27
26.5
26
25.5
25
42.8
43
43.2
43.4
43.6
43.8
44
44.2
44.4
44.6
44.8
45
45.2
freq (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
43.5-46.5 GHz GaAs MMIC
Power Amplifier
44MPA0478
April 2005 - Rev 01-Apr-05
Mechanical Drawing
1.549
(0.061)
1.438
(0.057)
2
3
1.937
2.337
(0.076) (0.092)
5
4
2.936
(0.116)
3.538
(0.139)
6
7
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2.490
(0.098)
0.937
(0.037)
1
14
13
0.937
(0.037)
1.438
(0.057)
12
11
0.0
1.937 2.337
(0.076) (0.092)
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0.0
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8
10
9
2.936
(0.116)
3.538
(0.139)
0.933
(0.037)
4.330
(0.170)
(Note: Engineering designator is 44MPA0478)
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1A)
Bond Pad #3 (Vd1A)
Bond Pad #4 (Vg2A)
Bond Pad #5 (Vd2A)
Bond Pad #6 (Vg3A)
Bond Pad #7 (Vd3A)
Bond Pad #8 (RF Out)
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Bias Arrangement
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Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 6.680 mg.
4
5
Vg3
6
RF In
Vg1,2
Vg3
7
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3
Bond Pad #13 (Vd1B)
Bond Pad #14 (Vg1B)
Bypass Capacitors - See App Note [2]
Vg1,2
2
Bond Pad #9 (Vd3B)
Bond Pad #10 (Vg3B)
Bond Pad #11 Vd2B)
Bond Pad #12 (Vg2B)
RF In
RF Out
Vd1,2
Vd3
1
14
13
8
12
11
10
Vd1,2
RF Out
9
Vd3
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
43.5-46.5 GHz GaAs MMIC
Power Amplifier
44MPA0478
April 2005 - Rev 01-Apr-05
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=Id2=360mA, and
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Id3=720mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain
current Id(total)=1440 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pf ) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
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For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance
(~100-200 pf ) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. All DC pads have been tied
together on chip and can be biased from either side.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
165.2 deg Celsius
78.5º C/W
3.65E+06
2.74E+02
75 deg Celsius
191.4 deg Celsius
82.8º C/W
3.89E+05
2.57E+03
95 deg Celsius
217.1 deg Celsius
87.0º C/W
5.48E+04
9.13E+03
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Backplate
Temperature
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Bias Conditions: Vd=5V, Id1=Id2=360 mA, Id3=720 mA
Device Schematic
VG1A
VD1A
VG2A
VD2A
VG3A
VD3A
R=16 Ohm
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R=20 Ohm
R=16 Ohm
R=20 Ohm
R=15 Ohm
R=20 Ohm
3
1
2
2
1
2
RFIN
2
3
1
R=50 Ohm
1
Pr
3
4
3
1
2
3
R=16 Ohm
R=15 Ohm
R=16 Ohm
R=16 Ohm
R=15 Ohm
3
4
2
1
R=16 Ohm
3
1
2
2
RF OUT
1
2
2
3
1
1
3
R=50 Ohm
3
R=20 Ohm
R=16 Ohm
R=20 Ohm
R=15 Ohm
R=20 Ohm
R=16 Ohm
VG1B
VD1B
VG2B
VD2B
VG3B
VD3B
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
43.5-46.5 GHz GaAs MMIC
Power Amplifier
44MPA0478
April 2005 - Rev 01-Apr-05
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
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Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
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Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
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ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
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Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C +- 10 C. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.