MIMIX XP1017-BD-000V

30.0-36.0 GHz GaAs MMIC
Power Amplifier
P1017-BD
August 2007 - Rev 09-Aug-07
Features
Chip Device Layout
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
16.0 dB Small Signal Gain
+33.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
XP1017-BD
General Description
Mimix Broadband’s two stage 30.0-36.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +33.0 dBm. The
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide
a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
950 mA
+0.3 VDC
+15 dBm
-65 to +165 OC
-55 to MTTF TAble4
MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB) 2
Output Third Order Intercept Point (OIP3) 1,2
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm 3
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
VDC
Min.
30.0
-1.0
-
Typ.
16.0
20.0
16.0
+/-0.5
40.0
+24.0
+33.0
+4.5
-0.7
440
0.3
Max.
36.0
+5.5
0.0
880
-
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6k .
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
P1017-BD
August 2007 - Rev 09-Aug-07
Power Amplifier Measurements
XP1017-BD_S21
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
XP1017-BD_S12
0
-5
-1 0
-1 5
-2 0
-2 5
-3 0
-3 5
-4 0
-4 5
-5 0
-5 5
-6 0
-6 5
-7 0
-7 5
-8 0
-8 5
-9 0
-9 5
-1 00
DB( |S[ 2, 1]|)
All So urc es
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
F requency (G Hz)
DB( |S[ 1 , 2]|)
All So urc es
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Fre quency ( G Hz)
XP1017-BD_S11
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
XP1017-BD_S22
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
DB (|S [1 , 1 ]|)
All So urc e s
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Fre quency (G Hz)
D B (|S [2, 2]|)
All Sou rc e s
20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
Frequency (G Hz)
XP1017-BD, A verage IM3, 4.5V, 110mA, +15dB m per tone
XP1017-BD P1dB
28
42
27
40
26
38
36
IM3, dBc
25
24
34
32
30
23
28
22
26
21
24
29
20
30
31
32
33
34
35
36
37
Fr eque nc y, G Hz
19
18
29
30
31
32
33
34
35
36
37
38
Frequenc y GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
August 2007 - Rev 09-Aug-07
Mechanical Drawing
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341
(0.092)
2
3
4
5
2.500
(0.098)
2.741
2.941
(0.108) (0.116)
6
7
8
1.710
(0.067)
P1017-BD
1
1.851
(0.073)
XP1017-BD
14
13
12
11
1.141
(0.045)
1.541
(0.061)
1.941
(0.076)
2.341
(0.092)
0.0
0.0
10
9
2.741 2.941 3.300
(0.108) (0.116) (0.130)
(Note: Engineering designator is 32H2BA0070)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Pads are 0.100 x 0.200 (0.004 x 0.008).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.115 mg.
Bond Pad #1 (RF In)
Bond Pad #4 (Vg2)
Bond Pad #7 (VIN2)
Bond Pad #11 (Vd4)
Bond Pad #2 (Vg1)
Bond Pad #5 (Vd2)
Bond Pad #8 (RF Out)
Bond Pad #12 (Vg4)
Bond Pad #3 (Vd2)
Bond Pad #6 (VDIF1)
Bond Pad #9 (VIN1)
Bond Pad #13 (Vd3)
Bond Pad #10 (VDIF2)
Bond Pad #14 (Vg3)
Bias Arrangement
Vd1,2
VDIF2
Vg1,2
VIN2
2
3
4
5
6
Bypass Capacitors - See App Note [3]
7
8
RF In
RF Out
1
XP1017-BD
14
Vg3,4
Vd3,4
13
12
11
10
9
VIN1
VDIF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
P1017-BD
August 2007 - Rev 09-Aug-07
App Note [1] Biasing - It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA,
Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate
voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The
common bias terminal is Vin, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vin
port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively,
Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6k .
App Note [3] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
deg Celsius
C/W
E+
E+
75 deg Celsius
deg Celsius
C/W
E+
E+
95 deg Celsius
deg Celsius
C/W
E+
E+
Bias Conditions: Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
P1017-BD
August 2007 - Rev 09-Aug-07
Device Schematic
VD2
VD1
VG 1
5 O hm
5 O hm
VG2
5 O hm
VIN2
VDIF 2
200 O hm
5 O hm
90 O hm
3
50 O hm
5 O hm
1
CA P 5 O hm
5 O hm
50 O hm
2
5 O hm
90 O hm
200 O hm
45 0 O hm
40 0 O hm CA P
40 0 O hm
RF in
2
1
50 O hm
1
3
3
3
3
1
1
2
RF out
2
50 O hm
400 O hm
400 O hm
50 O hm
350 O hm
45 0 O hm
20 0 O hm
5 O hm
5 O hm
50 O hm
50 O hm
350 O hm
2
5 O hm
50 O hm
5 O hm
90 O hm
2
1
3
90 O hm
VG 4
VG 3
5 O hm
5 O hm
VD3
5 O hm
200 O hm
5 O hm
VD4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
VDIF1 VIN1
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0-36.0 GHz GaAs MMIC
Power Amplifier
P1017-BD
August 2007 - Rev 09-Aug-07
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance
with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
Part Number for Ordering
XP1017-BD-000V
XP1017-BD-EV1
Description
Where “V” is RoHS compliant die packed in vacuum release gel paks
XP1017 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.