SEMIKRON SKDH146/16-L75

SKDH 146/.. -L75
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%
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4 7$ 8
19 "5#:".;'<-
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"#$$
19 "5#:"#;'<-
Absolute Maximum Ratings
Symbol Conditions
Bridge - Rectifier
SEMIPONTTM 6
3-Phase Bridge Rectifier
+ IGBT braking chopper
SKDH 146/.. -L75
Preliminary Data
Features
! "#$$% & &
!' () * + #, -,.
Typical Applications
&
/ 4 .- 8) Values
Units
3
3>12:312
4 7$ 8= & 4 "$ = "7$8 =?
"5$
".-$
6
6
@
4 "$ = "7$8 =?
<7$$
6@
IGBT - Chopper
%+1:%A+1
3
4 .- <$ 8
".$$ : .$
"$$ <-
%
6
32
4 " = 4 .- <$ 8
.$$ "-$
6
".$$
B$ <$
%
6
Freewheeling - CAL Diode
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8
8
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) "$ Characteristics
Symbol Conditions
Diode - Rectifier
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4 .- 8) min.
typ.
max.
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Units
% : F
$)7
9:G
IGBT - Chopper
%+
0?;
: : +D+
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3A
%
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& &H
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9:G
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75-)5 : B5)5
"7),
J
& CAL - Diode - Freewheeling
%E : ? 4 ".- 8
0?;
3002
K
& &H
3> 4 <- 6= %0 4 ; ;#$$ %=
3>: 4 ; ;7$$ 6:L
+
" : ""
"). : "-
% : F
$)7
9:G
5""
6
L
%A+ 4 $ %= ? 4 ".- 8
J
Temperature Sensor
01
4 .- "$$ 8=
"$$$ "#<$
F
Mechanical data
21
M
.)--
,)5-
N
DH
1
05-09-2007 DIL
© by SEMIKRON
SKDH 146/.. -L75
Fig. 1 Power dissipation per module vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3 Forward characteristic of single rectifier diode
Fig. 4 Forward characteristic of single thyristor
Fig. 5 Temperature sensor characteristic
2
Fig.6 Typ. gate charge characteristic
05-09-2007 DIL
© by SEMIKRON
SKDH 146/.. -L75
Fig. 7 Output IGBT characteristic Ic=f(Vce), Tj=25°C
Fig. 8 Output IGBT characteristic Ic=f(Vce), Tj=125°C
Fig. 9 Turn-on/-off energy=f(Ic)
Fig. 10 Turn-on/-off energy=f(Rg)
Fig.11 Gate trigger characteristic of a single thyristor
3
05-09-2007 DIL
© by SEMIKRON
SKDH 146/.. -L75
UL recognized
File n&#176; E63 532
Dimensions in mm
A -B
A -B
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
05-09-2007 DIL
© by SEMIKRON