SK 60 GB 125
Absolute Maximum Ratings
Symbol Conditions
IGBT
%/'
%2/'
(
(8
$ * +, -. Values
$ * +, 41 -5
9 0 5 $ * +, 41 -5
$;
Units
0+11
3 +1
,0 6,
016 :1
%
%
7
7
< =1 >>> ? 0,1
-
,: 64
00= 64
7
7
< =1 >>> ? 0,1
-
Inverse/Freewheeling CAL diode
®
SEMITOP 3
IGBT Module
SK 60 GB 125
Preliminary Data
Features
!
"#$ !
%
& Typical Applications
'
(&
'
)#'
(@
(@8 * < (8
$ * +, 41 -5
9 0 5 $ * +, 41 -5
$;
$
$
$. 01 < =1 >>> ? 0+,
+A1
-
-
%
7 ,1 B. >>> 0 > C 0 +,11 C 6111
%
Characteristics
Symbol Conditions
IGBT
%/
%2/
D;<
( * ,1 7. $; * +, 0+, -
%/ * %2/5 ( * ,1 7
%/ * 0, %5 %2/ * 1 %5 0 8B
(2$
$ * +, -. min.
=.,
typ.
6.+ 6.4,
,.,
6.=
max.
A.,
1.A
/ ? /
Units
%
%
@
ECF
ECF
G
% * A11 % . %2/ * 3 0, %
( * =, 7. $; * 0+, -
D2 * D2 * 66 H
(
& 41
A,
,6I
++
00
J
Inverse\Freewheeling CAL diode
%@ * %/
%$
$
(@ * ,1 75 $; * +, 0+, -
$; * 0+, -
$; * 0+, -
+ 0.4
0
0A
D;<
0.+
++
%
%
H
1.I
ECF
(DD8
K
G
(@ * ,1 75 %D * A11 %
(@C * <411 7CL
=1
4
7
L
/
%2/ * 1 %5 $; * 0+, -
+
J
Mechanical data
80
M
+.,
+I
'/8($#N
6
"
$ +:
GB
1
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
Fig.5 Typical output characteristic, Tj=25°C
Fig.6 Typical output characteristic, Tj=125°C
Fig.7 Turn-on / -off energy = f (IC)
Fig.8 Turn-on / -off energy = f (RG)
Fig.9 Typ. gate charge characteristic
Fig.10 Typ. capacitances vs. VCE
2
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
Fig.11 Typ. switching times vs. IC
Fig.12 Typ. switching times vs. gate resistor RG
Fig. 14 Typ. CAL Diode forward characteristic
3
19-10-2006 DIL
© by SEMIKRON
SK 60 GB 125
UL Recognized
File no. E 63532
Dimensions in mm
$+:
2
')22/'$/ O/(78/$/D @D $/ 'O/D #("' 7" $/ 8)"$("2 #("' (" $/
#G + $+:
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2006 DIL
© by SEMIKRON