SD1526-08 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1526-08 is a Common Base Device Designed for IFF, DME, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Low Thermal Resistance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC 1.0 A VCES 45 V PDISS 21.9 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +150 °C θJC 8.0 °C/W CHARACTERISTICS 1 = COLLECTOR 2 = EMITTER 3 = BASE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCEO IC = 5.0 mA 45 V BVCES IC = 5.0 mA 45 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 28 V hFE VCE = 5.0 V PG VCE = 28 V PULSE WIDTH IC = 100 mA Pout = 5.0 W =10 µS 10 f = 1025 to 1150 MHz =1.0% 9.5 1.0 mA 200 --dB DUTY CYCLE A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1