MS2601 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 x 400 2NL FLG DESCRIPTION: 1 The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz. 2 4 3 FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC 0.45 A VCC 34 V PDISS 11.5 W @ TC = 25 °C TJ -65 °C to+200 °C TSTG -65 °C to+200 °C θJC 13.0 °C/W CHARACTERISTICS 1 = COLLECTOR 2 & 4 = BASE 3 = EMITTER TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 45 V BVCER IC = 1.0 mA 45 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 30 V hFE VCE = 5 V POUT PG ηC IC = 100 mA VCC = 30 V PIN = 0.3 W Pulse Width = 100 µS 10 f = 2700 to 3100 MHz Duty Cycle = 10% 0.5 mA 150 --- 1.0 W 5.2 dB % 27 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1