White Electronic Designs WSF128K32-XH2X PRELIMINARY* 128KX32 SRAM/FLASH MODULE FEATURES FLASH MEMORY FEATURES Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH) 10,000 Erase/Program Cycles Sector Architecture Packaging: • 8 equal size sectors of 16K bytes each • 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402) • Any combination of sectors can be concurrently erased. Also supports full chip erase 128Kx32 SRAM 5 Volt Programming; 5V ± 10% Supply 128Kx32 5V Flash Embedded Erase and Program Algorithms Organized as 128Kx32 of SRAM and 128Kx32 of Flash Memory with common Data Bus Hardware Write Protection Low Power CMOS Page Program Operation and Internal Program Control Time. Commercial, Industrial and Military Temperature Ranges TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Weight - 13 grams typical * This product is under development, not fully characterized, and is subject to change without notice. Note: Programming information available upon request. FIGURE 1 – PIN CONFIGURATION FOR WSF128K32-XH2X Top View 1 12 Pin Description 23 34 45 56 I/O8 FWE2# I/O15 I/O24 VCC I/O31 I/O9 SWE2# I/O14 I/O25 SWE4# I/O30 I/O13 GND I/O10 FWE4# I/O26 I/O29 A14 I/O11 I/O12 A7 I/O27 I/O28 A16 A10 OE# A12 A4 A1 A11 A9 NC A0 A15 FWE1# SWE1# A5 A2 A13 A6 A3 VCC I/O7 A8 FWE3# I/O23 I/O0 FCS# I/O6 I/O16 SWE3# I/O22 I/O1 SCS# I/O5 I/O17 GND I/O21 11 I/O4 I/O3 I/O2 22 33 44 Address Inputs SWE1-4# SRAM Write Enable SCS# SRAM Chip Selects OE# Output Enable VCC Power Supply GND Ground NC Not Connected FWE1-4# Flash Write Enable FCS# Flash Chip Select SWE 1 # FWE 2 # SWE 2 # FWE 3 # SWE 3 # FWE 4 # SWE 4 # OE# A 0-16 SCS# FCS# 128K x 8 Flash 128K x 8 Flash 128K x 8 Flash 128K x 8 Flash 128K x 8 SRAM 128K x 8 SRAM 128K x 8 SRAM 128K x 8 SRAM I/O0-7 I/O8-15 I/O16-23 I/O24-31 I/O20 I/O19 I/O18 Data Inputs/Outputs A0-16 Block Diagram FWE 1 # NC D0-31 55 66 White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC Min -55 -65 -0.5 Max +125 +150 7.0 150 7.0 -0.5 Parameter Flash Data Retention Flash Endurance (write/erase cycles) SRAM TRUTH TABLE Unit °C °C V °C V SCS# H L L L 10 years 10,000 Min 4.5 2.2 -0.5 Max 5.5 VCC + 0.3 +0.8 Mode Standby Read Read Write Data I/O High Z Data Out High Z Data In Power Standby Active Active Active CAPACITANCE Ta = +25°C Parameter OE# capacitance F/S WE1-4# capacitance F/S CS# capacitance D0-31 capacitance A0-16 capacitance RECOMMENDED OPERATING CONDITIONS Symbol VCC VIH VIL SWE# X H H L NOTE: 1. FCS# must remain high when SCS# is low. NOTE: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Parameter Supply Voltage Input High Voltage Input Low Voltage OE# X L H X Unit V V V Symbol COE CWE CCS CI/O CAD Conditions Max Unit VIN = 0 V, f = 1.0 MHz 80 pF VIN = 0 V, f = 1.0 MHz 30 pF VIN = 0 V, f = 1.0 MHz 50 pF VIN = 0 V, f = 1.0 MHz 30 pF VIN = 0 V, f = 1.0 MHz 80 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C Parameter Input Leakage Current Output Leakage Current SRAM Operating Supply Current x 32 Mode Standby Current SRAM Output Low Voltage SRAM Output High Voltage Flash VCC Active Current for Read (1) Flash VCC Active Current for Program or Erase (2) Flash Output Low Voltage Flash Output High Voltage Flash Output High Voltage Flash Low VCC Lock Out Voltage Symbol ILI ILO ICCx32 ISB VOL VOH ICC1 ICC2 VOL VOH1 VOH2 VLKO Conditions VCC = 5.5, VIN = GND to VCC SCS# = VIH, OE# = VIH, VOUT = GND to VCC SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5 FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 IOL = 8mA, VCC = 4.5 IOH = -4.0mA, VCC = 4.5 FCS# = VIL, OE# = SCS# = VIH FCS# = VIL, OE# = SCS# = VIH IOL = 8.0mA, VCC = 4.5 IOH = -2.5 mA, VCC = 4.5 IOH = -100 µA, VCC = 4.5 Min Max 10 10 670 80 0.4 2.4 220 280 0.45 0.85 x VCC VCC -0.4 3.2 Unit µA µA mA mA V V mA mA V V V V NOTES: 1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Algorithm (program or erase) is in progress. 3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 2 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY SRAM AC CHARACTERISTICS SRAM AC CHARACTERISTICS VCC = 5.0V, -55°C ≤ TA ≤ +125°C VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Read Cycle Symbol -25 Min Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ1 tOLZ1 tCHZ1 tOHZ1 Units Parameter Write Cycle Max 25 25 0 25 15 3 0 12 12 ns ns ns ns ns ns ns ns ns Symbol Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold from Write Time 1. This parameter is guaranteed by design but not tested. -25 Min tWC tCW tAW tDW tWP tAS tAH tOW1 tWHZ1 tDH Units Max 25 20 20 15 20 3 0 3 ns ns ns ns ns ns ns ns ns ns 15 0 1. This parameter is guaranteed by design but not tested. FIGURE 2 – AC TEST CIRCUIT AC Test Conditions Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level Output Timing Reference Level I OL Current Source VZ ≈ 1.5V D.U.T. Unit V ns V V Notes: V Z is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. V Z is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. (Bipolar Supply) C eff = 50 pf Typ VIL = 0, VIH = 3.0 5 1.5 1.5 I OH Current Source White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 3 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 3 – SRAM TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA tRC SCS# ADDRESS tCLZ SOE# tOH DATA I/O tCHZ tACS tAA PREVIOUS DATA VALID tOE tOLZ DATA VALID DATA I/O tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1, (SCS# = OE# = VIL, SWE# = FCS# = VIH) READ CYCLE 2, (SWE# = FCS# = VIH) FIGURE 4 – SRAM WRITE CYCLE - SWE# CONTROLLED tWC ADDRESS tAW tAH tCW SCS# tAS tWP SWE# tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, SWE# CONTROLLED (FCS# = VIH) FIGURE 5 – SRAM WRITE CYCLE - SCS# CONTROLLED tWC ADDRESS tAS tAW tAH tCW SCS# tWP SWE# tDW DATA I/O tDH DATA VALID WRITE CYCLE 2, SCS# CONTROLLED (FCS# = VIH) White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 4 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -70 Min -90 Max Min -120 Max Min Unit Max Write Cycle Time tAVAV tWC 70 90 120 ns Chip Select Setup Time tELWL tCS 0 0 0 ns Write Enable Pulse Width tWLWH tWP 45 45 50 ns Address Setup Time tAVWL tAS 0 0 0 ns Data Setup Time tDVWH tDS 45 45 50 ns Data Hold Time tWHDX tDH 0 0 0 ns Address Hold Time tWLAX tAH 45 45 50 ns Chip Select Hold Time tWHEH tCH 0 0 0 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Duration of Byte Programming Operation (min) tWHWH1 14 14 14 µs Chip and Sector Erase Time tWHWH2 2.2 Read Recovery Time Before Write tGHWL 0 0 0 50 50 50 VCC Set-up Time tVCS 60 Chip Programming Time 2.2 60 12.5 2.2 60 sec µs µs 12.5 12.5 sec Output Enable Setup Time tOES 0 0 0 ns Output Enable Hold Time (1) tOEH 10 10 10 ns 1. For Toggle and Data# Polling. FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -70 Min -90 Max Min -120 Max Min Unit Max Read Cycle Time tAVAV tRC Address Access Time tAVQV tACC 70 90 120 ns Chip Select Access Time tELQV tCE 70 90 120 ns OE# to Output Valid tGLQV tOE 35 40 50 ns Chip Select to Output High Z (1) tEHQZ tDF 20 25 30 ns OE# High to Output High Z (1) tGHQZ tDF 20 25 30 ns Output Hold from Address, FCS# or OE# Change, whichever is first tAXQX tOH 70 90 0 0 120 0 ns ns 1. Guaranteed by design, not tested. White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS# CONTROLLED VCC = 5.0V, -55°C ≤ TA ≤ +125°C Parameter Symbol -70 Min Write Cycle Time tAVAV tWC -90 Max 70 Min -120 Max 90 Min Unit Max 120 ns FWE# Setup Time tWLEL tWS 0 0 0 ns FCS# Pulse Width tELEH tCP 35 45 50 ns Address Setup Time tAVEL tAS 0 0 0 ns Data Setup Time tDVEH tDS 30 45 50 ns Data Hold Time tEHDX tDH 0 0 0 ns Address Hold Time tELAX tAH 45 45 50 ns FWE# Hold from FWE# High tEHWH tWH 0 0 0 ns FCS# Pulse Width High tEHEL tCPH 20 20 20 ns Duration of Programming Operation tWHWH1 14 Duration of Erase Operation tWHWH2 2.2 Read Recovery before Write tGHEL 0 Chip Programming Time 14 60 2.2 14 60 0 12.5 2.2 µs 60 0 12.5 sec ns 12.5 sec White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 6 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 6 – AC WAVEFORMS FOR FLASH MEMORY READ OPERATIONS tRC Addresses Addresses Stable tACC FCS# tDF tOE OE# FWE# Outputs tCE tOH High Z Output Valid High Z NOTE: SCS# = VIH White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 7 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 7 – WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY FWE# CONTROLLED Data# Polling Addresses 5555H PA tWC tAS PA tAH tRC FCS# tGHWL OE# tWP FWE# tWHWH1 tWPH tCS tDH A0H Data tDF tOE D7# PD DOUT tDS tOH 5.0 V tCE NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates last two bus cycles of four bus cycle sequence. 6. SCS# = VIH White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 8 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 8 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FOR FLASH MEMORY tAS Addresses 5555H tAH 2AAAH 5555H 5555H 2AAAH SA FCS# tGHWL OE# tWP FWE# tWPH tCS Data tDH AAH 55H 80H AAH 55H 10H/30H tDS VCC tVCS Notes: 1. SA is the sector address for Sector Erase. 2. SCS# = VIH White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 9 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 9 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS FOR FLASH MEMORY t CH FCS# t DF t OE OE# tOEH FWE# tCE t OH D7 = Valid Data D7# D7 High Z tWHWH 1 or 2 D0-D7 Valid Data D0-D6 = Invalid D0-D6 t OE D7 Valid Data D7 D7 High Z tWHWH 1 or 2 Note: SCS# = VIH White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 10 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY FIGURE 10 – WRITE/ERASE/PROGRAM OPERATION FOR FLASH MEMORY, CS# CONTROLLED Data# Polling Addresses 5555H PA tWC PA tAH tAS FWE# tGHEL OE# tCP FCS# tWHWH1 tCPH tWS tDH A0H Data D7# PD DOUT tDS 5.0 V NOTES: 1. PA represents the address of the memory location to be programmed. 2. PD represents the data to be programmed at byte address. 3. D7# is the output of the complement of the data written to the device. 4. DOUT is the output of the data written to the device. 5. Figure indicates the last two bus cycles of a four bus cycle sequence. 6. SCS# = VIH White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com White Electronic Designs WSF128K32-XH2X PRELIMINARY PACKAGE 402: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2) 35.2 (1.385) ± 0.38 (0.015) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 5.7 (0.223) MAX 3.81 (0.150) ± 0.1 (0.005) 1.27 (0.050) ± 0.1 (0.005) 0.76 (0.030) ± 0.1 (0.005) 2.54 (0.100) TYP 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) ± 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W S F 128K32 - XX H2 X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H2 = Ceramic Hex In-line Package, HIP (Package 402) ACCESS TIME (ns) 22 = 25ns SRAM and 120ns FLASH 29 = 25ns SRAM and 90ns FLASH 27 = 25ns SRAM and 70ns FLASH ORGANIZATION, 128K x 32 Flash PROM SRAM WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corp. reserves the right to change products or specifications without notice. October 2004 Rev. 4 12 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com