DLP3V3DTZ DUAL UNIDIRECTIONAL AND SINGLE BIDIRECTIONAL TVS NEW PRODUCT General Description · This Transient Voltage Suppressor (TVS) diode is designed for dual uni-directional or single bi-directional protection for data lines, components or circuits from damage due to electrostatic discharge (ESD), cable discharge events(CDE) and lightning (see IPPM below). It offers high ESD capability, low reverse leakage, low junction capacitance and low clamping voltage over range of temperature. They are suitable for computers, communication systems, hand held portables, high density PC boards and peripherals. Features · · 372 Watts Peak Pulse Power (tp=8/20 mS) · · · · Dual Unidirectional and Single Bidirectional Configuration AEC-Q101 (Human Body Model- 8kV, Machine Model-400V) and 25 KV(air)/ 8 KV(contact) as per IEC61000-4-2(ESD) GND N/C 3 3 Lead Free By Design/ROHS Compliant (Note 2) "Green" Device (Note 3) Surface Mount Package Suited for Automated Assembly D1 D2 D1 D2 Mechanical Data · · Case: SOT-23 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking & Type Code Information: See Last Page 1 Case Material: "Green Molding" Compound (Molded Plastic). UL Flammability Classification Rating 94V-0 2 Line1_in 1 Line2_in A. Unidirectional Protection for two Lines Terminal Connections: See Fig. 1 2 Line_in GND B. Bidirectional Protection for a single Line Fig. 1: Schematic and Pin Configuration Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Ordering Information: See Page 6 Weight: 0.008 grams (approximate) Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Pulse Power (tp=8/20mS) Symbol Unidirectional Bidirectional Unidirectional Bidirectional Ppp ESD per IEC 6100--4-2(air) 300 mW 40 IPP A 15 10.5 A ± 25 Vpp ESD per IEC 6100--4-2(contact) W 145 IFSM Forward Surge Current (8.3 ms half sine-wave) Unit 372 Pd Continuous Power Dissipation (Note1) Maximum Peak Pulse Current (tp=8/20 mS) Value kV ±8 Thermal Characteristics Symbol Value Unit Operating and Storage Junction Temperature Range Characteristic Tj, Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note1) RqJA 420 °C/W Notes: 1. Device mounted on FR-4 PCB, 1 inchx 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2 . No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. DS30669 Rev. 2 - 2 1 of 7 www.diodes.com DLP3V3DTZ ã Diodes Incorporated Characteristic Symbol Min Typ Max Unit VRWM ¾ ¾ 3.3 V Pin 1 to 3 or Pin 2 to 3 Breakdown Voltage VBR 4.5 ¾ ¾ V Pin 1 to 3 or Pin 2 to 3 @ IT = 1mA Forward Voltage VF ¾ 0.8 ¾ V Pin 3 to 1 or Pin 3 to 2, IF = 10mA Reverse Leakage Current @VRWM IR ¾ ¾ 0.095 mA Unidirectional ¾ ¾ 6.0 Bidirectional ¾ ¾ 7.0 ¾ ¾ 9.3 Bidirectional ¾ ¾ 9.666 Unidirectional ¾ ¾ 420 Bidirectional ¾ ¾ 210 ¾ ¾ 230 ¾ ¾ 115 ¾ 0.115 ¾ Rated Reverse Standoff Voltage Clamping Voltage (Note 4) Unidirectional Vc Test Condition Pin 1 to 3 or Pin 2 to 3 Ipp = 1A (Pin 1 to 3 or Pin 2 to 3 V Ipp=1A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc) Ipp = 40A (Pin 1 to 3 or Pin 2 to 3) Ipp=15A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc) V Junction Capacitance Unidirectional Cj Bidirectional Dynamic Resistance @ Ipp (large signal) Unidirectional Rd Dynamic Impedance (small signal) Unidirectional ZZt Temperature Coefficient Unidirectional qvz pF VR = 0V, f =1 MHz pF VR = 3.3V, f=1 MHz ¾ W 380 ¾ W ¾ 47 ¾ W Ipp= 40A,Vc = 9.3V,VBR = 4.5V (Pin 1 to 3 or 2 to 3) IR=1 mA, f= 1 KHz (Pin 1 to 3 or 2 to 3) IR = 5 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3) ¾ -1.07 ¾ mV/°C IR=5 mA (Pin 1 to 3 or 2 to 3) 4. Clamping voltage value is based on a tp = 8/20 mS peak pulse current (Ipp) waveform. Notes: Typical Characteristics @ Tamb = 25°C unless otherwise specified 1000 372 W, 8/20 mS waveform % IPP, PEAK PULSE CURRENT Ppp, PEAK PULSE POWER (W) NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified 100 100 Peak Value Ipp TA = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM Half Value Ipp/2 50 e -kt td 10 100 10 1000 10000 td, PULSE DECAY TIME (mS) Fig. 2 Unidirectional Non-Repetitive Peak Pulse Power vs. Pulse Duration or Pulse Width DS30669 Rev. 2 - 2 2 of 7 www.diodes.com 0 0 8/20 Waveform as defined by R.E.A. 20 40 60 DLP3V3DTZ 12 Bidirectional 10 Vc, CLAMPING VOLTAGE (V) % OF RATED POWER OR Ipp Unidirectional 75 50 Average Power 25 8 6 4 2 0 0 75 50 125 TA, AMBIENT TEMPERATURE (°C) 25 0 100 150 0 5 10 15 20 25 30 35 40 45 Ipp, PEAK PULSE CURRENT (A) Fig. 5 Clamping Voltage vs. Peak Pulse Current Fig. 4 Power Derating Curve Single TVS Diode Characteristics: 10000 400 380 f = 1MHz 1000 Cj, CAPACITANCE (pF) 360 100 340 320 10 300 1 280 IR(uA) Ave @ -55°C 260 0.1 IR(uA) Ave @ 25°C 240 IR(uA) Ave @ 85°C 0.01 220 IR(uA) Ave @ 150°C 200 0 0.5 1 1.5 2 2.5 0.001 3 3.5 0 0.5 1 VR, REVERSE VOLTAGE (V) Fig. 6 Junction Capacitance vs. Reverse Voltage 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VR, REVERSE VOLTAGE (V) Fig. 7 Leakage Current vs. Reverse Voltage 10000 60 1000 IR, LEAKAGE CURRENT (mA) Ave VF(V) @ -55°C Ave VF(V) @ 25°C IF, FORWARD CURRENT (mA) NEW PRODUCT 100 Ave VF(V) @ 85°C Ave VF(V) @ 150°C 100 10 1 0.1 VZ(V) Ave @ -55°C 50 VZ(V) Ave @ 25°C VZ(V) Ave @ 85°C 40 VZ(V) Ave @ 150°C 30 20 10 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (V) Fig. 8 Typical Forward Characteristic DS30669 Rev. 2 - 2 3 of 7 www.diodes.com 3 3.5 4 4.5 5 5.5 6 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Reverse Characteristic DLP3V3DTZ 1000 0.001 ZZT, DYNAMIC IMPEDANCE (Ohm) NEW PRODUCT 0.0015 0.0005 0 -0.0005 -0.001 -0.0015 100 10 1 -0.002 0.1 -0.0025 0 10 20 30 40 50 60 IR, REVERSE CURRENT (mA) Fig. 10 Temperature Coefficient vs. Reverse Current DS30669 Rev. 2 - 2 4 of 7 www.diodes.com 0 5 10 15 20 25 30 35 40 IR, REVERSE CURRENT (mA) Fig. 11 Dynamic Impedance vs. Reverse Current (Small Signal) DLP3V3DTZ NEW PRODUCT Circuit Diagram Power/Data(3.3v) Line to be Protected Power/Data(3.3v) Line2 to be Protected Power/Data(3.3v) Line1 to be Protected Bidirectional TVS Potection for a Single Line D1 Unidirectional TVS Potection for Two Lines D1 D2 Note: D2 D1, D2 - TVS Zener Diode Note: D1, D2 - TVS Zener Diode Fig. 12 Typical Application Circuit Unidirectional Protection for Two 3.3V Dataline U1 D+ External Device out1 out2 1 3 1 4 2 3 Vin 2 4 Output Connector D- IC U2 Line 1_in 2 3 Line 2_in 1 DLP3V3DTZ Diodes Inc. Fig. 13 Bidirectional Protection for 3.3v Power Supply Bus 3.3v Vcc Supply Bus U2 U1 Vin Line_in Out1 1 6 2 5 3 4 1 Out2 In1 3 2 In2 DLP3V3DTZ IC Diodes Inc. Fig. 14 DS30669 Rev. 2 - 2 5 of 7 www.diodes.com DLP3V3DTZ Protection from ESD It is a fact that ESD is the primary cause of failure in electronic systems. Transient Voltage Suppressors(TVS) are an ideal choice for using as ESD protection devices. They have the capability to clamp the incoming transient to such a low level that the damage to the circuit beyond the device is prevented. Surface mount TVS are the best choice for minimum lead inductance. DLP3V3DTZ is designed to be used as two uni-directional or single bi-directional protection device in a circuit.They serve as parallel protection elements, connected between the signal line to ground. It will present a high impedance to the protected line up to 3.3 volts. As the transient rises above the operating voltage which is the breakdown voltage of the device, the TVS diode becomes a low impedance path diverting the transient current to ground. Dynamic Resistance to Calculate Clamping Voltage At times PCB designers need to calculate the clamping voltage VCL. For this reason the dynamic resistance in addition to the typical parameters is listed here. The voltage across the protected circuitry can be calculated as following: VCL = VBR + Rd * Ipp (also VCL= Vz + Rd*Ipp....for accuracy) e.g. If Ipp=1A, VCL = Vz + Rd*Ipp = 5.6 V (from fig. 9) + 1A*0.115 Ohm=(5.6+0.115)V=5.715 V (close to actual measured Value) Where Ipp is the peak current through the TVS Diode. The short duration of the ESD has led us to a widely adapted classical test wave, 8/20 mS and 10/1000 mS surges. Since Zzt remains stable for a surge duration less than 20mS, the 2.5 mS rectangular surge is sufficient for use. Peak Pulse Power Calculation The following relation fits well for pulse width less than 10 mS. Ppp = K (td)-0.5 e.g. Ppp = 372 watts for pulse width(td) of 20 mS, then 372 watts = K (20)-0.5 and K = 372/(20)-0.5 = 372*Ö20=1663.63 Now, Ppp when td= 50 mS: Ppp=1663.63 (50)-0.5 = 1663.63/(50)0.5=1663.63/(Ö50) = 235.27 watts (close to measured value see fig. 2) Tips for Circuit Board Layout Correct layout of the circuit board plays a critical role in preventing ESD induced failures. Some of useful guidelines are given below: - Trace length between the TVS diode and the circuit or line to be protected should be kept to a minimum. - Always place a TVS diode as close as possible to the input terminals or connectors if one is required. - Try to avoid or minimize power and ground loops or any other conductive loops. - Try to use ground planes whenever feasible rather than a simple ground trace. - The path to ground for the ESD transient return should be as short as possible. Ordering Information (Note 5) Notes: Device Marking Code Packaging Shipping DLP3V3DTZ-7 A07 SOT-23 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A07 = Product Type Marking Code YM = Date Code Marking Y = Year e.g., T = 2006 M = Month e.g., 1 = Janurary YM NEW PRODUCT Application Information A07 Fig. 15 Date Code Key Year 2005 2006 2007 2008 2009 Code S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30669 Rev. 2 - 2 6 of 7 www.diodes.com DLP3V3DTZ NEW PRODUCT Mechanical Details SOT-23 A B C TOP VIEW Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 D E G G 1.78 2.05 H H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° K J D M L Fig. 16 All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) Y Z C G X Fig. 17 Dimensions SOT-23* Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 All Dimensions in mm E * Typical values in mm Fig. 17 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30669 Rev. 2 - 2 7 of 7 www.diodes.com DLP3V3DTZ