COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics ● Medical ● Other High Precision Measurements GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area a Window Material Target Suitable Socket Description/Value 350 to 720 450 to 650 GaAsP(Cs) 5 Brosilicate glass 3 mm Single-element Electron Bombarded Si-Avalanche Diode E678-12M (supplied) Unit nm nm — mm dia. — Value -8500 155 b -40 to +50 Unit Vdc V °C — — MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Avalanche Diode Reverse Bias Voltage Ambient Temperature CHARACTERISTICS (at 25 °C) Cathode Sensitivity Parameter Luminous (2856K) Radiant at 550 nm QE at 550 nm Gain c Time Response c Diode (Target) Rise Time Fall Time Width Leakage Current d Capacitance d Min. — — — — — — — — — Typ. 400 200 45 4 × 104 1.3 15 5 — 120 Max. — — — — — — — 50 — Unit µA/lm mA/W % — ns ns ns nA pF NOTE: aWithout magnetic fields bat 25 °C cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: Approx.145 V dAvalanche Diode Reverse Bias Voltage: Approx.145 V Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. © 2000 Hamamatsu Photonics K.K. COMPACT HYBRID PHOTO-DETECTOR with Si-Avalanche Diode Target R7110U-40 Figure 1: Typical Gain 105 Figure 2: Typical Photoelectron Spectrum TPMHB0408EA TPMHB0409EB 3000 SINGLE P.E. COUNTS PER CHANNEL GAIN SUPPLY VOLTAGE: -8 kV 104 103 SUPPLY VOLTAGE: -8 kV APD BIAS VOLTAGE: 150 V PRE-AMP: ORTEC 142A 2000 1000 0 0 50 100 150 0 500 1000 ADC CHANNEL NUMBER APD BIAS VOLTAGE (V) Figure 3: Typical Spectral Response Figure 4: Dimensional Outline (Unit: mm) TPMHB0581EB 20.0 ± 0.1 CATHODE RADIANT SENSITIVITY 5 MIN. INPUT WINDOW 18.0 ± 0.5 2 -HV 100 DIODE PHOTOCATHODE QUANTUM EFFICIENCY 10 IC CATHODE ANODE 2.54 ± 0.2 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) 1000 1 IC IC 10.16 ± 0.2 0.1 300 400 500 600 700 800 IC : Internal Connect (should not be used) TPMHA0444EA WAVELENGTH (nm) HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected] Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: [email protected] TPMH1239E03 SEPT. 2000 SI Printed in Japan (1000)