MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB (at f = 2 GHz) • High gain: gain = 8dB (at f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 V Collector current IC 40 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Tstg −55~125 °C Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1B1A operating temperature/current/voltage, etc.) are within the Weight: 0.0022 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max fT (1) VCE = 1 V, IC = 5 mA 5 7 ⎯ fT (2) VCE = 3 V, IC = 10 mA 7 10 ⎯ 2 VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 5.5 ⎯ 2 ⎪S21e⎪ (2) VCE = 3 V, IC = 20 mA, f = 2 GHz 6 8 ⎯ NF (1) VCE = 1 V, IC = 5 mA, f = 2 GHz ⎯ 1.7 3 NF (2) VCE = 3 V, IC = 7 mA, f = 2 GHz ⎯ 1.4 2.2 ⎪S21e⎪ (1) 1 Unit GHz dB dB 2007-11-01 MT3S03AT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 5 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 1 V, IC = 0 ⎯ ⎯ 1 μA DC current gain hFE VCE = 1 V, IC = 5 mA 80 ⎯ 160 Reverse transfer capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz ⎯ 0.75 1.1 (Note) pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device is sensitive to electrostatic discharge. Please handle with caution. 2 2007-11-01 MT3S03AT 3 2007-11-01 MT3S03AT MT3S03AT VCE = 1 V, IC = 5 mA, f = 100~2000 MHz Step 100 MHz Frequency S11 S21 S12 ⎪S21⎪ S22 2 (MHz) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) (dB) 100 0.829 −42.09 13.97 152.75 0.044 67.95 0.872 −26.75 22.91 200 0.697 −74.86 11.12 131.99 0.071 55.16 0.695 −46.64 20.93 300 0.607 −98.64 8.78 119.37 0.086 48.94 0.548 −58.76 18.87 400 0.537 −116.18 7.10 110.48 0.095 46.46 0.442 −67.42 17.02 500 0.499 −130.11 5.91 103.78 0.102 45.94 0.372 −73.36 15.43 600 0.476 −140.68 5.05 98.73 0.109 46.82 0.320 −78.15 14.07 700 0.459 −149.97 4.42 94.75 0.116 47.94 0.283 −81.90 12.90 800 0.445 −157.67 3.93 91.11 0.123 49.17 0.255 −84.50 11.88 900 0.437 −164.71 3.55 88.00 0.130 50.80 0.233 −86.64 10.99 1000 0.430 −170.88 3.22 85.10 0.138 52.41 0.214 −88.82 10.17 1100 0.424 −176.25 2.96 82.46 0.146 53.41 0.202 −90.56 9.42 1200 0.421 179.03 2.76 80.09 0.154 54.93 0.191 −91.76 8.81 1300 0.413 174.76 2.59 77.80 0.163 56.15 0.181 −93.92 8.26 1400 0.414 170.58 2.43 75.44 0.172 57.35 0.174 −93.26 7.71 1500 0.408 166.41 2.29 73.26 0.181 57.94 0.172 −93.59 7.18 1600 0.407 162.15 2.18 71.49 0.191 59.12 0.165 −94.64 6.76 1700 0.400 158.83 2.08 69.51 0.201 59.83 0.163 −95.43 6.38 1800 0.395 155.08 2.00 67.45 0.213 60.20 0.166 −94.98 6.00 1900 0.394 152.17 1.91 65.71 0.224 60.47 0.167 −95.20 5.63 2000 0.391 148.78 1.85 63.69 0.234 60.42 0.166 −96.54 5.34 4 2007-11-01 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step 100 MHz Frequency S11 S21 S12 ⎪S21⎪ S22 2 (MHz) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) Mag. Ang. (°) (dB) 100 0.537 −80.38 30.70 132.46 0.027 62.04 0.622 −52.35 29.74 200 0.435 −120.48 18.94 112.69 0.040 59.57 0.389 −76.84 25.55 300 0.400 −142.77 13.32 104.00 0.051 62.40 0.276 −90.44 22.49 400 0.384 −154.99 10.24 98.52 0.062 65.36 0.213 −101.30 20.21 500 0.373 −165.10 8.30 94.44 0.074 67.95 0.174 −109.99 18.38 600 0.370 −172.70 6.96 91.41 0.086 69.26 0.149 −117.89 16.85 700 0.367 −178.98 6.01 88.83 0.098 70.37 0.130 −124.15 15.58 800 0.364 175.68 5.32 86.47 0.110 71.06 0.114 −129.15 14.52 900 0.365 170.51 4.77 84.51 0.123 71.31 0.102 −133.86 13.57 1000 0.363 165.94 4.30 82.50 0.136 71.64 0.092 −138.99 12.67 1100 0.362 162.06 3.96 80.56 0.148 71.54 0.083 −142.41 11.95 1200 0.356 158.37 3.66 78.86 0.162 71.29 0.074 −144.85 11.28 1300 0.354 154.54 3.42 77.07 0.174 71.27 0.067 −145.86 10.67 1400 0.347 150.55 3.19 75.49 0.188 70.88 0.059 −144.94 10.09 1500 0.344 147.06 3.02 73.43 0.201 70.44 0.053 −143.48 9.60 1600 0.341 143.15 2.85 72.09 0.214 70.07 0.046 −142.20 9.09 1700 0.334 140.08 2.73 70.46 0.229 69.53 0.042 −137.65 8.72 1800 0.329 136.43 2.61 68.56 0.242 68.74 0.042 −124.50 8.33 1900 0.323 133.53 2.49 67.10 0.256 67.93 0.043 −114.28 7.93 2000 0.320 131.09 2.40 65.14 0.269 66.91 0.044 −110.52 7.61 5 2007-11-01 MT3S03AT RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01