Preliminary SGL-0363Z Pb RoHS Compliant & Green Package Product Description Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is designed for 2.7 to 3.3V battery operation. The matching networks are implemented externally which allows for optimum narrow-band performance with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC uses the latest Silicon Germanium HBT process. 5-2000 MHz Low Noise Amplifier Silicon Germanium The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. Simplified Device Schematic Vpc RF Out Narrow-band Matching Network Gnd Active Bias Network RF In Product Features • Lead Free, RoHS Compliant & Green Package • Low Power Consumption, 5.7mA @ 3.3V • External Input Noise Match • High Gain and Low Noise, • • • Narrow-band Matching Network 20dB and 1.1dB respectively @ 900MHz Operates from 2.7 to 3.3V Power Shutdown Capability using VPC Small Package: SOT-363 Applications • Low Power LNA for ISM, Cellular and Mobile Communications Gnd Symbol S21 Parameters Units Small Signal Gain Output Power at 1dB Compression dBm IIP3 Input Third Order Intercept Point dBm NF Noise Figure dBm S11 Input Return Loss dBm S22 Output Return Loss dBm S12 Reverse Isolation dBm Device Operating Current Thermal Resistance (junction - lead) mA °C/W Test Conditions: Vcc = 3.3V TL = 25°C 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz 200 MHz 450 MHz 900 MHz dB P1dB ID RTH, j-l Frequency ID = 5.7mA Typ. ZS = ZL = 50 Ohms Min. 17 4.8 Typ. 21 20 20 1.1 2.2 2.5 -3.1 -3.1 -3.1 1.0 1.1 1.1 14 12 15 20 19 12 24 25 27 5.7 TBD Max. 23 6.6 IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm Different Application Circuit per Band The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Absolute Maximum Ratings Max Device Current (ID) 8mA 7 Max Device Voltage (VD) 4V 6 Max. RF Input Power -10 dBm 5 Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Id (mA) Absolute Limit 25C -40C 85C 4 3 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l DCIV over Temperature 8 Parameter 1 0 0 1 TL=TLEAD 2 Vd (V) 3 4 Typical Performance - De-embedded S-parameters Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The device was mounted on eval. board 125390-B and grounded like 900MHz application circuit. De-embedded S-parameters can be downloaded from our website (www.sirenza.com) S11 Vs. Frequency S22 Vs. Frequency 4 GHz 3 GHz .2 GHz .2 GHz 2 GHz .45 GHz .9 GHz .45 GHz 2 GHz .9 GHz 4 GHz 3 GHz Insertion Gain & Isolation 30 -5 25 -10 Gain (dB) Max Gain 20 -15 Gain 15 -20 10 -25 5 -30 0 Isolation (dB) Isolation -35 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 200 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency Gain vs. Frequency 24 2 1.8 1.6 22 85C Gain (dB) NF (dB) 1.4 1.2 1 0.8 20 S21_25C 18 S21_-40C 25C S21_85C 0.6 0.4 170 16 170 180 190 200 210 220 180 230 Frequency (MHz) 200 210 20 18 OIP3 (dBm) S11 S12 S22 -10 dB -15 -20 17 16 15 25C 14 -40C 13 -25 85C 12 180 190 200 210 220 11 170 230 180 Frequency (MHz) IM3 vs. Tone Power @200MHz 5 P1dB (dBm) IM3 (dBc) 4 -50 -60 25C -40C 85C -70 -13 -11 220 230 -9 220 230 25C -40C 85C 3 2 1 -1 -7 -5 -2 170 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 210 0 -80 -15 200 P1dB vs. Frequency 6 -40 -17 190 Frequency (MHz) -30 -19 230 19 -5 -30 170 220 OIP3 vs. Freq. (-15dBm Output Tones) Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 190 Frequency (MHz) 180 190 200 210 Frequency (MHz) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 450 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency S21_25C 85C 1.8 S21_-40C 22 1.6 Gain (dB) 1.4 NF (dB) Gain vs. Frequency 24 2 1.2 1 25C S21_85C 20 18 0.8 0.6 0.4 420 430 440 450 460 470 16 420 480 430 440 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 460 470 480 20 OIP3 vs. Freq. (-15dBm Output Tones) 19 S11 S12 S22 -10 18 OIP3 (dBm) -5 dB 450 Frequency (MHz) Frequency (MHz) -15 -20 -25 -30 420 430 440 450 460 470 17 16 15 14 -40C 12 85C 11 420 480 25C 13 430 Frequency (MHz) 440 450 460 470 480 470 480 Frequency (MHz) IM3 vs. Tone Power @450MHz P1dB vs. Frequency 6 -30 5 4 P1dB (dBm) IM3 (dBc) -40 -50 -60 -17 -15 -13 -11 -9 -7 1 -5 -2 420 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 25C -40C -1 -80 -19 2 0 25C -40C 85C -70 3 85C 430 440 450 460 Frequency (MHz) Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier 900 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA Note: Tuned for NF Noise Figure vs. Frequency 85C 1.8 22 1.6 Gain (dB) 1.4 NF (dB) Gain vs. Frequency 24 2 1.2 1 25C 0.8 20 S21_25C 18 S21_-40C 0.6 0.4 870 S21_85C 880 890 900 910 920 16 870 930 880 900 910 920 930 OIP3 vs. Freq. (-15dBm Output Tones) Input/Output Return Loss, Isolation vs. Frequency, T=25C 20 0 19 S11 S12 S22 OIP3 (dBm) -5 -10 dB 890 Frequency (MHz) Frequency (MHz) -15 -20 18 25C 17 -40C 85C 16 15 14 13 -25 12 -30 870 880 890 900 910 920 11 870 930 880 Frequency (MHz) 890 900 910 920 930 Frequency (MHz) P1dB vs. Frequency IM3 vs. Tone Power @900MHz -30 6 5 4 P1dB (dBm) IM3 (dBc) -40 -50 -60 25C -40C 85C -70 -17 -15 -13 -11 -9 -7 2 25C 1 -40C 0 85C -1 -80 -19 3 -5 -2 870 Pout per tone (dBm) 303 S. Technology Ct. Broomfield, CO 80021 880 890 900 910 920 930 Frequency (MHz) Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 200 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 5.1Ω Ζ=50Ω, 0.8° Ζ=50Ω, 7.5° Ζ=50Ω, 1.1° Ζ=50Ω, 0.6° 2ΚΩ Ζ=50Ω, 3.8° Evaluation Board Layout for 200 MHz Bill of Materials C1 C2 C3 C4 C5 1.0uF Tantalum capacitor 1200pF 0603 ceramic capacitor 12pF 0603 ceramic capacitor 1200pF 0603 ceramic capacitor .01uF 0603 ceramic capacitor L1 LL1608-FS56NJ Toko 56nH L2 LL1608-FS12NJ Toko 12nH R1 2KΩ 0603 res (5%) R2 56Ω 0603 res (5%) R3 5.1Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 450 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 6.8Ω Ζ=50Ω, 1.8° Ζ=50Ω, 2.5° Ζ=50Ω, 2.5° Ζ=50Ω, 3.3° 2.2ΚΩ Ζ=50Ω, 8.5° Evaluation Board Layout for 450 MHz Bill of Materials C1 C2 C3 C4 C5 C6 L1 R1 R2 R3 1.0uF Tantalum capacitor 1200pF ceramic 0603 capacitor 5.6pF ceramic 0603 capacitor 1200pF ceramic 0603 capacitor 1200pF ceramic 0603 capacitor 0.5pF ceramic 0603 capacitor LL1608-FS27NJ Toko 27nH 2.2KΩ 0603 res (5%) 56Ω 0603 res (5%) 6.8Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Application Schematic for 900 MHz Note: Electrical lengths are determined from the center of a shunt component and a cut on the center trace 56Ω 12Ω Ζ=50Ω, 3.6° Ζ=50Ω, 4.5° Ζ=50Ω, 5.1° Ζ=50Ω, 3.5° Evaluation Board Layout for 900 MHz Bill of Materials C1 C2 C3 C4 C5 L1 L2 R1 R2 1.0uF Tantalum capacitor 1200pF ceramic 0603 capacitor 2.2pF ceramic 0603 capacitor 100pF ceramic 0603 capacitor 47pF ceramic 0603 capacitor LL1608-FS10NJ Toko 10nH LL1608-FS18NJ Toko 18nH 12Ω 0603 res (5%) 56Ω 0603 res (5%) Connectors 2x PSF-S01-1mm GigaLane Co. Heat sink EEF-102059 PCB 125390-B 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-104341 Rev B Preliminary SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier Part Number Ordering Information Pin # Function 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor and matching components as shown in the application schematics. GND Connect to ground per application circuit drawing. Series feedback used to improve IRL Gnd Gnd for active bias tied internally to pin 2 & 5 2, 5 3 4 6 Description Part Number Reel Size Devices / Reel SGL-0363Z 7" 3000 RF OUT/ RF output and bias pin. Bias should be supplied to this pin VD through an external RF choke. (See application circuits) VPC is the bias control pin for the active bias network. VPC Part Identification Suggested Pad Layouts 6 5 4 L03Z 1 2 3 Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. MSL (Moisture Sensitivity Level) Rating: Level 1 900MHz Layout 200MHz & 400MHz Layout Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 303 S. Technology Ct. Broomfield, CO 80021 Phone: (800) SMI-MMIC 9 http://www.sirenza.com EDS-104341 Rev B