ETC SGL

Preliminary
SGL-0363Z
Pb
RoHS Compliant
& Green Package
Product Description
Sirenza Microdevices’ SGL-0363Z is a low power, low noise amplifier. It is
designed for 2.7 to 3.3V battery operation. The matching networks are
implemented externally which allows for optimum narrow-band performance
with 20dB typical gain and 1.1dB noise figure from 200-900MHz. This RFIC
uses the latest Silicon Germanium HBT process.
5-2000 MHz Low Noise Amplifier
Silicon Germanium
The matte tin finish on Sirenza’s lead-free package utilizes a post annealing
process to mitigate tin whisker formation and is RoHS compliant per EU
Directive 2002/95. This package is also manufactured with green molding
compounds that contain no antimony trioxide or halogenated fire retardants.
Simplified Device Schematic
Vpc
RF Out
Narrow-band
Matching
Network
Gnd
Active Bias
Network
RF In
Product Features
• Lead Free, RoHS Compliant & Green Package
• Low Power Consumption, 5.7mA @ 3.3V
• External Input Noise Match
• High Gain and Low Noise,
•
•
•
Narrow-band
Matching
Network
20dB and 1.1dB respectively @ 900MHz
Operates from 2.7 to 3.3V
Power Shutdown Capability using VPC
Small Package: SOT-363
Applications
• Low Power LNA for ISM,
Cellular and Mobile Communications
Gnd
Symbol
S21
Parameters
Units
Small Signal Gain
Output Power at 1dB Compression
dBm
IIP3
Input Third Order Intercept Point
dBm
NF
Noise Figure
dBm
S11
Input Return Loss
dBm
S22
Output Return Loss
dBm
S12
Reverse Isolation
dBm
Device Operating Current
Thermal Resistance (junction - lead)
mA
°C/W
Test Conditions:
Vcc = 3.3V
TL = 25°C
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
200 MHz
450 MHz
900 MHz
dB
P1dB
ID
RTH, j-l
Frequency
ID = 5.7mA Typ.
ZS = ZL = 50 Ohms
Min.
17
4.8
Typ.
21
20
20
1.1
2.2
2.5
-3.1
-3.1
-3.1
1.0
1.1
1.1
14
12
15
20
19
12
24
25
27
5.7
TBD
Max.
23
6.6
IIP3 Tone Spacing = 1MHz, Pout per tone = -15 dBm
Different Application Circuit per Band
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
Absolute Maximum Ratings
Max Device Current (ID)
8mA
7
Max Device Voltage (VD)
4V
6
Max. RF Input Power
-10 dBm
5
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Id (mA)
Absolute Limit
25C
-40C
85C
4
3
2
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
DCIV over Temperature
8
Parameter
1
0
0
1
TL=TLEAD
2
Vd (V)
3
4
Typical Performance - De-embedded S-parameters
Note: S-parameters are de-embedded to the device leads with ZS=ZL=50Ω. The device was mounted on eval. board 125390-B and grounded like 900MHz
application circuit. De-embedded S-parameters can be downloaded from our website (www.sirenza.com)
S11 Vs.
Frequency
S22 Vs.
Frequency
4 GHz
3 GHz
.2 GHz
.2 GHz
2 GHz
.45 GHz
.9 GHz
.45 GHz
2 GHz
.9 GHz
4 GHz
3 GHz
Insertion Gain & Isolation
30
-5
25
-10
Gain (dB)
Max Gain
20
-15
Gain
15
-20
10
-25
5
-30
0
Isolation (dB)
Isolation
-35
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
200 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA
Note: Tuned for NF
Noise Figure vs. Frequency
Gain vs. Frequency
24
2
1.8
1.6
22
85C
Gain (dB)
NF (dB)
1.4
1.2
1
0.8
20
S21_25C
18
S21_-40C
25C
S21_85C
0.6
0.4
170
16
170
180
190
200
210
220
180
230
Frequency (MHz)
200
210
20
18
OIP3 (dBm)
S11
S12
S22
-10
dB
-15
-20
17
16
15
25C
14
-40C
13
-25
85C
12
180
190
200
210
220
11
170
230
180
Frequency (MHz)
IM3 vs. Tone Power @200MHz
5
P1dB (dBm)
IM3 (dBc)
4
-50
-60
25C
-40C
85C
-70
-13
-11
220
230
-9
220
230
25C
-40C
85C
3
2
1
-1
-7
-5
-2
170
Pout per tone (dBm)
303 S. Technology Ct.
Broomfield, CO 80021
210
0
-80
-15
200
P1dB vs. Frequency
6
-40
-17
190
Frequency (MHz)
-30
-19
230
19
-5
-30
170
220
OIP3 vs. Freq. (-15dBm Output Tones)
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
0
190
Frequency (MHz)
180
190
200
210
Frequency (MHz)
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
450 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA
Note: Tuned for NF
Noise Figure vs. Frequency
S21_25C
85C
1.8
S21_-40C
22
1.6
Gain (dB)
1.4
NF (dB)
Gain vs. Frequency
24
2
1.2
1
25C
S21_85C
20
18
0.8
0.6
0.4
420
430
440
450
460
470
16
420
480
430
440
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
0
460
470
480
20
OIP3 vs. Freq. (-15dBm Output Tones)
19
S11
S12
S22
-10
18
OIP3 (dBm)
-5
dB
450
Frequency (MHz)
Frequency (MHz)
-15
-20
-25
-30
420
430
440
450
460
470
17
16
15
14
-40C
12
85C
11
420
480
25C
13
430
Frequency (MHz)
440
450
460
470
480
470
480
Frequency (MHz)
IM3 vs. Tone Power @450MHz
P1dB vs. Frequency
6
-30
5
4
P1dB (dBm)
IM3 (dBc)
-40
-50
-60
-17
-15
-13
-11
-9
-7
1
-5
-2
420
Pout per tone (dBm)
303 S. Technology Ct.
Broomfield, CO 80021
25C
-40C
-1
-80
-19
2
0
25C
-40C
85C
-70
3
85C
430
440
450
460
Frequency (MHz)
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
900 MHz Application Circuit Data, VCC= 3.3V, ID= 5.7mA
Note: Tuned for NF
Noise Figure vs. Frequency
85C
1.8
22
1.6
Gain (dB)
1.4
NF (dB)
Gain vs. Frequency
24
2
1.2
1
25C
0.8
20
S21_25C
18
S21_-40C
0.6
0.4
870
S21_85C
880
890
900
910
920
16
870
930
880
900
910
920
930
OIP3 vs. Freq. (-15dBm Output Tones)
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
20
0
19
S11
S12
S22
OIP3 (dBm)
-5
-10
dB
890
Frequency (MHz)
Frequency (MHz)
-15
-20
18
25C
17
-40C
85C
16
15
14
13
-25
12
-30
870
880
890
900
910
920
11
870
930
880
Frequency (MHz)
890
900
910
920
930
Frequency (MHz)
P1dB vs. Frequency
IM3 vs. Tone Power @900MHz
-30
6
5
4
P1dB (dBm)
IM3 (dBc)
-40
-50
-60
25C
-40C
85C
-70
-17
-15
-13
-11
-9
-7
2
25C
1
-40C
0
85C
-1
-80
-19
3
-5
-2
870
Pout per tone (dBm)
303 S. Technology Ct.
Broomfield, CO 80021
880
890
900
910
920
930
Frequency (MHz)
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
Application Schematic for 200 MHz
Note: Electrical lengths
are determined from
the center of a shunt component and a cut on
the center trace
56Ω
5.1Ω
Ζ=50Ω, 0.8°
Ζ=50Ω, 7.5°
Ζ=50Ω, 1.1°
Ζ=50Ω, 0.6°
2ΚΩ
Ζ=50Ω, 3.8°
Evaluation Board Layout for 200 MHz
Bill of Materials
C1
C2
C3
C4
C5
1.0uF Tantalum capacitor
1200pF 0603 ceramic capacitor
12pF 0603 ceramic capacitor
1200pF 0603 ceramic capacitor
.01uF 0603 ceramic capacitor
L1 LL1608-FS56NJ Toko 56nH
L2 LL1608-FS12NJ Toko 12nH
R1 2KΩ 0603 res (5%)
R2 56Ω 0603 res (5%)
R3 5.1Ω 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-102059
PCB
125390-B
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
6
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
Application Schematic for 450 MHz
Note: Electrical lengths
are determined from
the center of a shunt component and a cut on
the center trace
56Ω
6.8Ω
Ζ=50Ω, 1.8°
Ζ=50Ω, 2.5°
Ζ=50Ω, 2.5°
Ζ=50Ω, 3.3°
2.2ΚΩ
Ζ=50Ω, 8.5°
Evaluation Board Layout for 450 MHz
Bill of Materials
C1
C2
C3
C4
C5
C6
L1
R1
R2
R3
1.0uF Tantalum capacitor
1200pF ceramic 0603 capacitor
5.6pF ceramic 0603 capacitor
1200pF ceramic 0603 capacitor
1200pF ceramic 0603 capacitor
0.5pF ceramic 0603 capacitor
LL1608-FS27NJ Toko 27nH
2.2KΩ 0603 res (5%)
56Ω 0603 res (5%)
6.8Ω 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-102059
PCB
125390-B
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
Application Schematic for 900 MHz
Note: Electrical lengths
are determined from
the center of a shunt component and a cut on
the center trace
56Ω
12Ω
Ζ=50Ω, 3.6°
Ζ=50Ω, 4.5°
Ζ=50Ω, 5.1°
Ζ=50Ω, 3.5°
Evaluation Board Layout for 900 MHz
Bill of Materials
C1
C2
C3
C4
C5
L1
L2
R1
R2
1.0uF Tantalum capacitor
1200pF ceramic 0603 capacitor
2.2pF ceramic 0603 capacitor
100pF ceramic 0603 capacitor
47pF ceramic 0603 capacitor
LL1608-FS10NJ Toko 10nH
LL1608-FS18NJ Toko 18nH
12Ω 0603 res (5%)
56Ω 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-102059
PCB
125390-B
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
8
http://www.sirenza.com
EDS-104341 Rev B
Preliminary
SGL-0363Z 5-2000 MHz SiGe Low Noise Amplifier
Part Number Ordering Information
Pin #
Function
1
RF IN
RF input pin. This pin requires the use of an external DC
blocking capacitor and matching components as shown in the
application schematics.
GND
Connect to ground per application circuit drawing. Series
feedback used to improve IRL
Gnd
Gnd for active bias tied internally to pin 2 & 5
2, 5
3
4
6
Description
Part Number
Reel Size
Devices / Reel
SGL-0363Z
7"
3000
RF OUT/ RF output and bias pin. Bias should be supplied to this pin
VD
through an external RF choke. (See application circuits)
VPC is the bias control pin for the active bias network.
VPC
Part Identification
Suggested Pad Layouts
6 5 4
L03Z
1 2 3
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
MSL
(Moisture Sensitivity Level)
Rating: Level 1
900MHz Layout
200MHz & 400MHz Layout
Nominal Package Dimensions
Dimensions in inches [millimeters]
Refer to drawing posted at www.sirenza.com for tolerances.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
9
http://www.sirenza.com
EDS-104341 Rev B