ETC SXB-2089

Preliminary
SXB-2089Z
Product Description
Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/
GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a
low-cost, surface-mountable plastic package.
5-2500 MHz Medium Power InGaP/GaAs
HBT Amplifier
RoHS Compliant
Pb & Green Package
These amplifiers are specially designed for use as driver devices for
infrastructure equipment in the 5-2500 MHz Cellular, ISM, WLL, PCS &
W-CDMA applications. It’s high linearity makes it an ideal choice for
multi-carrier as well as digital applications.
Typical IP3, P1dB, Gain
50
45
40
35
30
25
20
15
10
5
0
IP3
IP3
P1dB Gain
Product Features
IP3
•
•
•
•
•
•
P1dB
P1dB
Gain
Gain
High OIP3: +43dBm at 1960 MHz
P1dB: 24dBm
High Linearity/ACP Performance
Robust 2000V ESD, Class 2
SOT-89 package
MSL 1 moisture rating
Applications
880 MHz
1960 MHz
Symbol
• PA Driver Amplifier
• IF Amplifier
• Cellular, PCS, ISM, WLL, W-CDMA
2140 MHz
Parameters
Units
Min.
Typ.
dBm
450 MHz
880 MHz
1960 MHz
2140 MHz
24.1
24.5
24.2
24.7
dBm
450 MHz
880 MHz
1960 MHz
2140 MHz
25
23
17
17
Input VSWR
450 MHz
880 MHz
1960 MHz
2140 MHz
1.1:1
1.3:1
1.4:1
1.3:1
Noise Figure
dB
450 MHz
880 MHz
1960 MHz
2140 MHz
4.9
4.3
4.3
4.2
OIP3
Third Order Intercept Point
(Pout/tone = +11dBm, Tone spacing = 1MHz)
dBm
450 MHz
880 MHz
1960 MHz
2140 MHz
40
41
43
43
ACP
Channel Power
IS-95 at 450/880/1960MHz, -55dBc ACP
WCDMA at 2140MHz, -50dBc ACP
dBm
450 MHz
880 MHz
1960 MHz
2140 MHz
16
16.3
15.5
15.6
P1dB
Output Power at 1 dB Compression
S21
Small Signal Gain
S11
NF
ID
Device Current
mA
Test Conditions:
RTH, j-l
Test Conditions:
Thermal Resistance @ 85C (junction - lead)
Ta = 25°C
Vs = 8V
Rbias = 20 Ohms
Vdevice = 5.2V
°C/W
120
135
Max.
150
51.3
ZO = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Absolute Maximum Ratings
Absolute Limit
Max Device Current (IDQ)
190mA
Max Device Voltage (VD)
6V
Max. RF Input Power
+20 dBm
Max. Operating Dissipated
Power (quiescent)
1.0 W
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
DCIV over Temperature (with App. Circuits)
250
200
Id (25C)
Id (mA)
Parameter
150
Id (-40C)
Id (85C)
100
50
0
Test
Conditions:
Operation
of this device beyond any one of these limits may cause
0
2
4
6
8
Noise Figure (with Application Circuits)
6
25C
85C
5
MSL (Moisture Sensitivity Level) Rating: Level 1
NF (dB)
ESD Class 2, 2000V HBM
Appropriate precautions in handling, packaging
and testing devices must be observed.
10
Voltage (V)
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating
values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=TLEAD
4
3
2
1
0
450 MHz
880 MHz
1960 MHz
2140 MHz
Simplified Device Schematic with ESD diodes
Narrowband
App. Ckt.
Vc/Output
Input
Narrowband
App. Ckt.
Gnd
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
880 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
P1dB vs. Frequency
26
26
-45
25
25C
-50
25
ACP (dB)
P1dB (dBm)
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 880MHz)
-40
24
24
-40C
85C
-55
-60
25C
23
23
22
850
-65
-40C
85C
860
870
880
-70
890
900
-75
910
10
Frequency (MHz)
11
12
13
14
15
16
17
18
19
Channel Power (dBm)
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
S21 over Temperature
28
0
26
S11
-5
S12
S22
24
-15
22
dB
Gain (dB)
-10
25C
-40C
20
860
870
880
-25
-30
85C
18
850
-20
-35
890
900
-40
850
910
860
870
Frequency (MHz)
OIP3 vs. Freq. (11dBm Output Tones)
900
910
OIP3 vs. Tone Power @880MHz
44
44
42
42
40
25C
38
-40C
85C
36
34
850
890
46
OIP3 (dBm)
OIP3 (dBm)
46
880
Frequency (MHz)
40
38
25C
36
-40C
85C
34
860
870
880
890
900
910
2
4
6
8
10
12
14
16
Pout per tone (dBm)
Frequency (MHz)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
1960 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
P1dB vs. Frequency
26
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 1960MHz)
-40
26
-45
25C
-50
25
ACP (dB)
P1dB (dBm)
25
24
24
25C
-60
-65
23
-40C
23
85C
22
1930
-40C
85C
-55
-70
-75
1940
1950
1960
1970
1980
10
1990
11
12
13
14
15
16
17
18
19
Channel Power (dBm)
Frequency (MHz)
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
S21 over Temperature
22
0
-5
20
-10
-15
-20
16
dB
Gain (dB)
18
25C
14
12
1930
1940
1950
-25
-40C
-30
85C
-35
1960
1970
1980
S11
S12
S22
-40
1930
1990
1940
44
44
42
42
IP3 (dBm)
OIP3 (dBm)
46
40
25C
-40C
34
1930
1970
1980
1990
40
25C
38
-40C
85C
36
1960
OIP3 vs. Tone Power @1960MHz
OIP3 vs. Freq. (11dBm Output Tones)
46
38
1950
Frequency (MHz)
Frequency (MHz)
36
85C
34
1940
1950
1960
1970
1980
1990
Frequency (MHz)
2
4
6
8
10
12
14
16
Pout per tone (dBm)
450 MHz & 2140MHz Application Circuits available in Application Note AN-078 at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Application Schematic & Assembly Drawing 880MHz Circuit
Note: Electrical lengths
50Ω, 4.6°
50Ω, 9.8°
50Ω, 3.1°
50Ω, 2.3°
50Ω, 6.7°
50Ω, 4.2°
50Ω, 2.9°
50Ω, 2.9°
50Ω, 4.2°
50Ω, 3.3°
50Ω, 3.9°
50Ω, 2.3°
50Ω, 9.1°
Ζ10
Ζ5
68Ω
3.3Ω
Ζ3
Ζ9
Ζ6
Ζ11
Ζ12
1.5nH
5.6pF
Ζ8
RF In
Ζ2
10nH
SXB-2089Z
Ζ7
Ζ1
1.0uF Tantalum
1200pF
82nH
22pF
20Ω
180Ω
Ζ4
Ζ1
Ζ2
Ζ3
Ζ4
Ζ5
Ζ6
Ζ7
Ζ8
Ζ9
Ζ10
Ζ11
Ζ12
Ζ13
are determined from
the center of a shunt component and a cut on
the center trace
Ζ13
1.8pF
68pF
RF Out
1ΚΩ
1200pF
+
Bill of Materials
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
C1
TAJB105KLRH Rohm 1.0uF
C2,C5 MCH185C122KK Rohm 1200pF
C3
MCH185A680JK Rohm 68pF
C4
MCH185A1R8CK Rohm 1.8pF
C6
MCH185A5R6DK Rohm 5.6pF
C7
MCH185A220JK Rohm 22pF
L1
LL1608-FS10NJ Toko 10nH
L2
LL1608-FS1N5S Toko 1.5nH
L3
LL1608-FSR82NJ Toko 82nH
R1
20Ω 2515 res (1%)
R2
180Ω 0603 res (5%)
R3
68Ω 0603 res (5%)
R4
3.3Ω 0603 res (5%)
R5
1KΩ 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-101407
PCB
ECB-102925-B
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Application Schematic & Assembly Drawing 1960MHz Circuit
Note: Electrical lengths
50Ω, 15.9°
50Ω, 7.0°
50Ω, 6.2°
50Ω, 6.8°
50Ω, 5.1°
50Ω, 14.9°
50Ω, 9.3°
50Ω, 6.4°
50Ω, 6.4°
50Ω, 9.3°
50Ω, 7.3°
50Ω, 8.6°
50Ω, 10.0°
50Ω, 15.4°
RF In
Ζ11
Ζ6
27nH
Ζ2
1.8pF
3.6Ω
Ζ3
Ζ4
10nH
SXB-2089Z
Ζ10
Ζ7
2.7pF
Ζ12
Ζ13
1.2nH
Ζ9
4.7pF
1.0uF Tantalum
1200pF
68Ω
Ζ8
Ζ1
20Ω
180Ω
Ζ5
Ζ1
Ζ2
Ζ3
Ζ4
Ζ5
Ζ6
Ζ7
Ζ8
Ζ9
Ζ10
Ζ11
Ζ12
Ζ13
Ζ14
are determined from
the center of a shunt component and a cut on
the center trace
1200pF
Ζ14
1.2pF
12pF
RF Out
1.5ΚΩ
+
Bill of Materials
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
6
C1
TAJB105KLRH Rohm 1.0uF
C2,C5 MCH185C122KK Rohm 1200pF
C3
MCH185A120JK Rohm 12pF
C4
MCH185A1R2CK Rohm 1.2pF
C6
MCH185A1R8CK Rohm 1.8pF
C7
MCH185A4R7CK Rohm 4.7pF
C8
MCH185A2R7CK Rohm 2.7pF
L1
LL1608-FS10NJ Toko 10nH
L2
LL1608-FS1N2S Toko 1.2nH
L3
LL1608-FS270JK Toko 27nH
R1
20Ω 2512 res (1%)
R2
180Ω 0603 res (5%)
R3
68Ω 0603 res (5%)
R4
3.6Ω 0603 res (5%)
R5
1.5KΩ 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-101407
PCB
ECB-102925-B
http://www.sirenza.com
EDS-104625 Rev B
Preliminary
SXB-2089Z 5-2500MHz InGaP/GaAs HBT Power Amplifier
Suggested PCB Pad Layout
Dimensions in inches [millimeters]
Pin #
Function
1
RF IN
RF input pin. This pin requires the use of an external DC blocking capacitor
and matching components chosen for the frequency of operation.
2,4
GND
Connection to ground. Use via holes for best performance to reduce lead
inductance as close to ground leads as possible.
3
Description
RF OUT/ RF output pin. This pin requires the use of an external DC blocking capacitor,
BIAS
choke and matching components as shown in the Application Schematic.
Package Marking
4
Devices / Reel
SXB-2089Z
7"
1000
1
2
3
Reel Size
1
Part Number
2
XB2Z
Part Number Ordering Information
3
Package Dimensions
(Refer to Application Note AN075 at www.sirenza.com)
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-104625 Rev B