Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 35V N-CH RDS(ON) 25m N-CH ID 7.0A P-CH BVDSS -35V N-CH RDS(ON) 40m N-CH ID -6.1A G S S 4 5 11 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4511 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Performance Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 3 ID @TA=25 Continuous Drain Current 3 ID @TA=70 Pulsed Drain Current 1 IDM PD @TA=25 Total Power Dissipation Linear Derating Factor 6.20 5.00 4.00 8 0.90 0.25 Ratings N-channel P-channel 35 -35 M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Unit V 20 V 7 -6.1 A 5.7 -5 A 30 -30 A 20 2.0 0.016 Operating Junction and Storage Temperature Range REF. Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS4511 3 Max. Unit /W Page: 1/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-Channel Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 35 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 9 - S VDS=10V, ID=7A IGSS - - 100 nA VGS= - - 1 uA VDS=35V, VGS=0 - - 25 uA VDS=28V, VGS=0 - 18 25 - 29 37 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 20V VGS=10V, ID=7A VGS=4.5V, ID=5A Total Gate Charge2 Qg - 11 18 Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 6 - Td(on) - 12 - Tr - 7 - Td(off) - 22 - Tf - 6 - Input Capacitance Ciss - 830 1330 Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 110 - Rg - 1.2 1.8 Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.7A, VGS=0V Reverse Recovery Time Trr - 18 - ns Reverse Recovery Charge Qrr - 12 - nC IS=7A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=7A VDS=28V VGS=4.5V ns VDS=18V ID=1A VGS=10V RG=3.3 RD=18 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS4511 Page: 2/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B P-Channel Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -35 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - -0.02 - Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 9 - S VDS=-10V, ID=-6A IGSS - - 100 nA VGS= - - -1 uA VDS=-35V, VGS=0 - - -25 uA VDS=-28V, VGS=0 - 32 40 - 50 60 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA 20V VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 10 16 Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 6 - Td(on) - 10 - Tr - 6 - Td(off) - 26 - Tf - 7 - Input Capacitance Ciss - 690 1100 Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 130 - Rg - 5.2 7.8 Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-1.7A, VGS=0V Reverse Recovery Time Trr - 20 - ns Reverse Recovery Charge Qrr - 12 - nC IS=-6A, VGS=0V dI/dt=100A/ s Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Gate Resistance nC ID=-6A VDS=-28V VGS=-4.5V ns VDS=-18V ID=-1A VGS=-10V RG=3.3 RD=18 pF VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage 2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS4511 Page: 3/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GSS4511 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics T A =25 Single Pulse Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics GSS4511 Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GSS4511 Page: 6/7 ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics T A =25 Single Pulse Fig 9. Maximum Safe Operating Area Fig 11. Transfer Characteristics Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS4511 Page: 7/7