Pb Free Plating Product ISSUED DATE :2006/04/27 REVISED DATE : N-CH BVDSS 30V N-CH RDS(ON) 33m N-CH ID 6A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GSS4501S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4501S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Low On-resistance *Schottky Diode Included Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage 6.20 5.00 4.00 8° 0.90 0.25 Ratings N-channel P-channel REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Unit VDS 30 -30 V VGS ±20 ±20 V Continuous Drain Current 3 ID @TA=25 6 -5.3 A Continuous Drain Current 3 ID @TA=70 4.8 -4.7 A 20 -20 A Pulsed Drain Current 1 IDM Total Power Dissipation PD @TA=25 Linear Derating Factor 2.0 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-a 62.5 W W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSS4501S 3 Max. Unit /W Page: 1/7 ISSUED DATE :2006/04/27 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 12 - S VDS=10V, ID=6A IGSS - - ±100 nA VGS= ±20V - - 100 uA VDS=30V, VGS=0 - - 1 mA VDS=24V, VGS=0 - - 33 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) IDSS Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 RDS(ON) 2 50 m Test Conditions VGS=10V, ID=6A VGS=4.5V, ID=5A Total Gate Charge Qg - 8.2 - Gate-Source Charge Qgs - 2 - Gate-Drain (“Miller”) Change Qgd - 4.3 - Td(on) - 6 - Tr - 5.2 - Td(off) - 18.8 - Tf - 4.4 - Ciss - 645 - Output Capacitance Coss - 150 - Reverse Transfer Capacitance Crss - 95 - Symbol Min. Typ. Max. Unit VSD - - 0.5 V IS=1.7A, VGS=0V Reverse Recovery Time Trr - 16 - ns Reverse Recovery Charge Qrr - 8 - nC IS=1.7A, VGS=0V dI/dt=100A/ s 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=6A VDS=24V VGS=4.5V ns VDS=15V ID=1A VGS=10 RG=3.3 RD=15 pF VGS=0V VDS=25V f=1.0MHz Source-Drain & Schottky Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS4501S Page: 2/7 ISSUED DATE :2006/04/27 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 8.5 - S VDS=-10V, ID=-5.3A IGSS - - ±100 nA VGS= ±20V - - -1 uA VDS=-30V, VGS=0 - - -25 uA VDS=-24V, VGS=0 - - 50 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 2 IDSS RDS(ON) 90 m Test Conditions VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A Total Gate Charge Qg - 20 - Gate-Source Charge Qgs - 3.5 - Gate-Drain (“Miller”) Change Qgd - 2 - Td(on) - 12 - Tr - 20 - Td(off) - 45 - Tf - 27 - Ciss - 790 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 120 - Symbol Min. Typ. Max. Unit VSD - - -1.2 V IS=-2.6A, VGS=0V Reverse Recovery Time Trr - 33.4 - ns Reverse Recovery Charge Qrr - 52 - nC IS=-2.6A, VGS=0V dI/dt=100A/ s 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance nC ID=-5.3A VDS=-15V VGS=-10V ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. GSS4501S Page: 3/7 ISSUED DATE :2006/04/27 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode GSS4501S Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/04/27 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit GSS4501S Page: 5/7 ISSUED DATE :2006/04/27 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature GSS4501S Page: 6/7 ISSUED DATE :2006/04/27 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS4501S Page: 7/7