ONSEMI NB4N507ADG

NB4N507A
3.3V/5V, 50 MHz to 200 MHz
PECL Clock Synthesizer
Description
The NB4N507A is a precision clock synthesizer which generates a
very low jitter differential PECL output clock. It produces a clock
output based on an integer multiple of an input reference frequency.
The NB4N507A accepts a standard fundamental mode crystal,
using Phase−Locked−Loop (PLL) techniques, will produce output
clocks up to 200 MHz. In addition, the PLL circuitry will produce a
50% duty cycle square−wave clock output.
The NB4N507A can be programmed to generate a selection of input
reference frequency multiples. An exact 155.52 MHz output clock can
be generated from a 19.44 MHz crystal and the x8 multiplier selection.
The NB4N507A is intended for low output jitter clock generation.
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SOIC−16
D SUFFIX
CASE 751B
Features
•
•
•
•
•
•
•
•
•
Input Crystal Frequency of 10 − 27 MHz
Enable Usage of Common Low−Cost Crystal
Differential PECL Output Clock Frequencies up to 200 MHz
Duty Cycle of 48%/52%
Operating Range: VCC = 3.0 V to 5.5 V
Ideal for SONET Applications and Oscillator Manufacturers
Available in Die Form
Packaged in 16−Pin Narrow SOIC
Pb−Free Packages are Available*
Osc
PD
CP
NB4N507AG
AWLYWW
CLKOUT
CLKOUT
PECL
VCO
MARKING DIAGRAM
OE
Mult
A
WL
Y
WW
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
S0 S1
Figure 1. Simplified Logic Block
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 2
1
Publication Order Number:
NB4N507A/D
NB4N507A
VDD
X1/CLK
Oscillator
Buffer
Crystal
Phase
Detector
X2
Charge
Pump
CLKOUT
PECL
Output
VCO
CLKOUT
Feedback
Multiplier
Select
OE
S0 S1
GND
Figure 2. NB4N507A Logic Diagram
Table 1. CLOCK MULTIPLIER SELECT TABLE
X1/CLK
1
16
X2
VDD
2
15
NC
VDD
3
14
S0
S1
4
13
OE
GND
5
12
NC
GND
6
11
NC
NC
7
10
NC
CLKOUT
8
9
CLKOUT
S1
S0
Multiplier
L
L
9.72X*
L
M
10X
L
H
12X
M
L
6.25X
M
M
8X
M
H
5X
H
L
NA
H
M
3X
H
H
4X
Table 2. OE, OUTPUT ENABLE FUNCTION
Figure 3. 16−Pin SOIC (Top View)
OE
Function
0
Disable
1
Enable
*Crystal = 16 MHz, fCLKOUT = 155.52 MHz
L = GND
H = VDD
M = OPEN
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NB4N507A
Table 3. PIN DESCRIPTION
Pin #
SOIC−16
Name
1
X1/CLK
Crystal Input
Crystal or Clock Input
2,3
VDD
Power Supply
Positive Supply Voltage (3.0 V to 5.5 V)
I/O
Description
4
S1
Tri−Level Input
Multiplier Select Pin; When Left Open, Defaults to VDD B 2
5,6
GND
Power Supply
Negative Supply Voltage
7,10,11,12,
15
NC
No Connect
8
CLKOUT
PECL Output
Non−inverted differential PECL clock output.
9
CLKOUT
PECL Output
Inverted differential PECL clock output.
13
OE
(LV)CMOS/(LV)TTL
Input
14
S0
Tri−Level Input
16
X2
Crystal Input
Output Enable for the CLKOUT/CLKOUT Outputs. Outputs are
enabled when HIGH or when left open; OE pin has internal pullup resistor. Disables
both outputs when LOW. CLKOUT goes LOW, CLKOUT goes HIGH.
Multiplier Select Pin; When Left Open, Defaults to VDD B 2
Crystal Input
Table 4. ATTRIBUTES
Characteristics
ESD Protection
Value
Human Body Model
Machine Model
Charged Device Model
> 1 kV
> 150 V
> 1 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
Transistor Count
1145 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 5. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
GND = 0 V
Rating
Unit
6
V
GND − 0.5 ≤ VI ≤ VDD + 0.5
V
VCC
Positive Power Supply
VI
Input Voltage
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−16
100
60
°C/W
°C/W
qJC
Thermal Resistance (Junction−to−Case)
(Note 2)
SOIC−16
33 to 36
°C/W
Tsol
Wave Solder
265
265
°C
Pb
Pb−Free
< 3 sec @ 248°C
< 3 sec @ 260°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
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NB4N507A
Table 6. DC CHARACTERISTICS (VDD = 3.0 V to 5.5 V, GND = 0 V, TA = −40°C to +85°C (Note 3))
Min
Typ
Max
Unit
IDD
Symbol
Power Supply Current
(does not include output load resistor current)
Characteristic
VDD = 5 V
VDD = 3.3 V
15
10
27
23
35
30
mA
mA
VOH
Output HIGH Voltage (Notes 5 & 6)
VDD = 5 V
VDD = 3.3 V
3.95
2.57
4.05
2.67
4.15
2.77
V
VOL
Output LOW Voltage (Notes 5 & 6)
VDD = 5 V
VDD = 3.3 V
3.12
1.90
3.20
2.00
3.30
2.10
V
VIH
Input HIGH Voltage (Note 4)
S0, S1, X1
OE
VDD – 0.5
2.0
VDD
V
VIL
Input LOW Voltage,(Note 4)
S0, S1, X1
OE
0
0.5
0.8
V
Cx
Internal Crystal Capacitance, X1 & X2
Cin
Input Capacitance, S0, S1, OE
0
pF
5.0
pF
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. PECL output parameters vary 1:1 with VDD.
4. S0 and S1 default to VDD B 2 when left open.
Table 7. AC CHARACTERISTICS (VDD = 3.0 V to 5.5 V, GND = 0 V, TA = −40°C to +85°C (Note 5))
Symbol
Characteristic
Min
Typ
Max
Unit
fXtal
Crystal Input Frequency
10
27
MHz
fCLK
Input Clock Frequency (Note 8)
5
52
MHz
fOUT
Output Frequency Range
50
200
MHz
Vout pk−pk
Output Amplitude
550
DC
Clock Output Duty Cycle (Note 8)
48
PLLBW
PLL Bandwidth (Note 8)
10
tjitter (pd)
Period Jitter (RMS, 1s, 10,000 Cycles)
tjitter (pd)
Period Jitter (Peak−to−Peak, 10,000 Cycles)
tr/tf
Output Rise and Fall Times (Note 8)
50
680
mV
52
%
kHz
270
10
ps
$20
ps
500
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
5. PECL outputs loaded with external resistors for proper operation (see Figure 4).
6. VOH and VOL can be set by the external resistors, which can be modified.
7. The crystal should be fundamental mode, parallel resonant. Do not use third overtone. For exact tuning when using a crystal, capacitors
should be connected from pins X1 to ground and X2 to ground. The value of these capacitors is given by the following equation, where CL
is the specified crystal load capacitance: Crystal caps (pF) = (CL−5) x 2. So, for a crystal with 16 pF load capacitance, use two 22 pF caps.
8. Guaranteed by design and characterization.
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NB4N507A
VDD
NB4N507
GND
z = 50 W
VDD
z = 50 W
D
62 W
VDD
PECL
Driver
62 W
PECL
Receiver
D
z = 50 W
z = 50 W
270 W
GND
GND
GND
Figure 4. Recommended PECL Output Loading for the NB4N507A
APPLICATIONS INFORMATION
High Frequency Differential PECL Oscillators: The
NB4N507A, along with a low frequency fundamental mode
crystal, can build a high frequency differential PECL output
oscillator. For example, a 10 MHz crystal connected to the
NB4N507A with the 12X output selected (S1 = 0, S0 = 1)
produces a 120 MHz PECL output clock.
High Frequency VCXO: The bandwidth of the PLL is
guaranteed to be greater than 10 kHz. This means that the
PLL will track any modulation on the input with a frequency
of less than 10 kHz. By using this property, a low frequency
VCXO can be built. The output can then be multiplied by the
NB4N507A, thereby producing a high frequency VCXO.
High Frequency TCXO: Extending the previous
application, an inexpensive, low frequency TCXO can be
built and the output frequency can be multiplied using the
NB4N507A. Since the output of the chip is phase−locked to
the input, the NB4N507A has no temperature dependence,
and the temperature coefficient of the combined system is
the same as that of the low frequency TCXO.
Decoupling and External Components
The NB4N507A requires a 0.01 mF decoupling capacitor
to be connected between VDD and GND on pins 2 and 5. It
must be connected close to the NB4N507A. Other VDD and
GND connections should be connected to those pins, or to the
VDD and GND planes on the board. Another four resistors are
needed for the PECL outputs as shown on the block diagram
in Figure 1. Suggested values of these resistors are shown in
the Block Diagram, but they can be varied to change the
differential pair output swing, and the DC level.
ORDERING INFORMATION
Package
Shipping †
NB4N507AD
SOIC−16
48 Units / Rail
NB4N507ADG
SOIC−16
(Pb−Free)
48 Units / Rail
NB4N507ADR2
SOIC−16
2500 / Tape & Reel
NB4N507ADR2G
SOIC−16
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NB4N507A
Resource Reference of Application Notes
AN1405/D
− ECL Clock Distribution Techniques
AN1406/D
− Designing with PECL (ECL at +5.0 V)
AN1503/D
− ECLinPSt I/O SPiCE Modeling Kit
AN1504/D
− Metastability and the ECLinPS Family
AN1568/D
− Interfacing Between LVDS and ECL
AN1672/D
− The ECL Translator Guide
AND8001/D
− Odd Number Counters Design
AND8002/D
− Marking and Date Codes
AND8020/D
− Termination of ECL Logic Devices
AND8066/D
− Interfacing with ECLinPS
AND8090/D
− AC Characteristics of ECL Devices
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NB4N507A
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
−A−
16
9
1
8
−B−
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
8 PL
0.25 (0.010)
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
ECLinPS is a trademark of Semiconductor Components INdustries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your local
Sales Representative
NB4N507A/D