SANKEN SML19416W

SEL1016/10016Series
5φ Round Standard Bicolor LED
SML1016/10016 Series
(Unit: mm)
External Dimensions
2.0±0.5
10.6
1.0 7.6±0.2
0.65max
3 – 0.5±0.1
ø5.8±0.2
(2.54)(2.54)
0.5±0.1
Directivity (Typical)
±0.5
B
ø5.0±0.2
1.0min 1.5min 17.0min
90°
100%
50
0
90°
100%
60°
50
0
90°
100%
50
0°
0° A
30°
A
60°
90°
100%
50
30°
Transparent
B
30°
30°
60°
Internal wiring
diagram 2
B
30°
60°
1.2
0.8
Tolerance: ±0.3
A
0°
30°
60°
Resin burr 0.3max
Resin heap 1.5max
Internal wiring
diagram 1
0° A
30°
90°
100%
B
60°
60°
50
0
90°
100%
50
30°
90°
100%
60°
50
0
50
90°
100%
Diffused white
Absolute maximum ratings (Ta=25°C)
Symbol
IF
∆IF
IFP
VR
Top
Tstg
Unit
mA
mA/°C
mA
V
°C
°C
Rating
30
−0.45
100
4
−30 to +85
−30 to +100
Condition
Above 25°C
f=1kHz, tw≤100µs
Absolute maximum ratings (Ta=25°C)
●Common cathode (Internal wiring diagram 1)
Emitting color
A
B
A
B
A
B
A
B
A
B
A
B
Deep red
Pure green
Deep red
Pure green
Red
Green
Red
Green
Amber
Green
Orange
Green
Part
Number
Lens color
SML11516C Clear
SML1516W Diffused white
SML1216C Clear
SML1216W Diffused white
SML1816W Diffused white
SML19416W Diffused white
Forward voltage
Reverse current
Intensity
Peak wavelength Spectrum half width
VF
Condition IR Condition IV Condition λP Condition ∆λ Condition Chip
material
(V)
IF
(µA)
VR (mcd)
IF
(nm)
IF
(nm)
IF
typ
max (mA) max
(V)
typ (mA) typ (mA)
typ (mA)
2.0
2.0
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.0
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
4
4
4
4
4
4
4
4
4
4
4
4
15
50
6.0
20
65
90
60
60
50
60
45
60
20
20
20
20
20
20
20
20
20
20
20
20
700
555
700
555
630
560
630
560
610
560
587
560
10
10
10
10
10
10
10
10
10
10
10
10
100
20
100
20
35
20
35
20
35
20
33
20
10
10
10
10
10
10
10
10
10
10
10
10
GaP
GaP
GaP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
GaAsP
GaP
●Common anode (Internal wiring diagram 2)
Emitting color
HighA intensity red
B
Yellow
A Highintensity red
B
44
Yellow
Part
Number
Lens color
SML16716CN Clear
SML16716WN Diffused white
Forward voltage
Reverse current
Intensity
Peak wavelength Spectrum half width
VF
Condition IR Condition IV Condition λP Condition ∆λ Condition Chip
material
(V)
IF
(µA)
VR (mcd)
IF
(nm)
IF
(nm)
IF
typ
max (mA) max
(V)
typ (mA) typ (mA)
typ (mA)
1.7
2.4
1.7
2.4
2.2
3.0
2.2
3.0
10
10
10
10
10
10
10
10
4
4
4
4
100
140
50
70
20
20
20
20
660
570
660
570
10
10
10
10
30
30
30
30
10
10
10
10
GaAIAs
GaP
GaAIAs
GaP