SID2010Series 3φ Round Infrared LED SID2010 Series (Unit: mm) Cathode 1.0min 25.8min (1.3) Directivity (Typical) (2.54) 1.7 0.65max 0.4±0.1 0.4 0° 30° 0.45±0.1 ø3.8 3.5±0.1 ø3.1±0.1 External Dimensions 30° Resin burr 0.3max Resin heap 1.5max 60° 90° 100% 60° 50 0 50 90° 100% Tolerance: ±0.3 Absolute maximum ratings (Ta=25°C) Symbol IF ∆IF IFP VR Top Tstg Unit mA mA/°C mA V °C °C Rating 150 −1.33 1000 5 −30 to +85 −30 to +100 Condition Above 25°C f=1kHz, tw≤10µ s Electrical Optical characteristics (Ta=25°C) Part Number Lens color SID2010C Clear SID2K10C Clear Reverse current Forward voltage Optical Power VF Condition IR Condition Ie (V) IF (µA) VR (mW/sr) Condition typ max (mA) max (V) typ 1.3 1.3 1.5 1.5 50 50 10 10 5 5 7.0 14 IF=50mA IF=50mA Peak wavelength Spectrum half width λP Condition ∆λ Condition Chip material (nm) IF (nm) IF typ (mA) typ (mA) 940 940 50 50 50 50 50 50 GaAs 57