AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier Product Features 60 – 2500 MHz +24 dBm P1dB +41 dBm Output IP3 19 dB Gain @ 900 MHz Product Description Functional Diagram The AH114 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOT-89 SMT package. All devices are 100% RF and DC tested. GND 4 14.5 dB Gain @ 1900 MHz +5V Single Positive Supply Lead-free / Green / RoHScompliant SOT-89 Package Applications The AH114 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH114 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. 1 2 3 RF IN GND RF OUT Function Input / Base Output / Collector Ground Pin No. 1 3 2, 4 Final stage amplifiers for Repeaters Mobile Infrastructure DBS / WLL / WLAN / WiBro Defense / Homeland Security Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Operating Current Range Device Voltage Typical Performance (1) Units Min MHz MHz dB dB dB dBm dBm 60 13.5 +39.5 Typ Parameters Units Typical 2500 Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Supply Bias MHz dB dB dB dBm dBm dB 900 1900 2140 19 14.5 14 -14 -10 -25 -10 -14 -20 +24 +23 +23 +40 +41 +40 5.0 5.0 6.0 +5 V @ 150 mA 1900 14.5 10 14 +23 +41 dBm +17 dB MHz dB dBm dBm mA V 5.0 2140 14 +23 +40 150 +5 130 Max 170 1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Junction Temperature -40 to +85 C -65 to +150 C +15 dBm +6 V 220 mA +250 C Ordering Information Part No. Description AH114-89G ¼ Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOT-89 Pkg) AH114-89PCB900 900 MHz Evaluation Board AH114-89PCB1900 1900 MHz Evaluation Board AH114-89PCB2140 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 6 November 2006 AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 C, unmatched 50 ohm system) 4 0. 8 6 0. 2. 0 4. 0 5. 0. 2 0 0 5. 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 .0 -2 -0.8 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 3 -0 .6 2.5 .4 -0 .0 -2 2 -0.8 1.5 Frequency (GHz) -1.0 1 -0 .6 0.5 0.4 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0 0.4 -3 .0 0 2 -0. -3 .0 0 -4 .0 -5. 0 .4 -0 0 -10. 2 -0. 5 0 10 10.0 0.2 10.0 15 -4 .0 -5. 0 Gain (dB) 0 3. 0 0. 2 20 2. 0 1.0 0. 8 6 0. 0 3. 4. Swp Max 3.075GHz -10. 0. 25 4 DB(GMax) * 0. DB(|S[2,1]|) * S22 Swp Max 3.075GHz 1.0 S11 Gain / Maximum Stable Gain 30 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -3.61 -3.31 -2.62 -2.62 -2.54 -2.39 -2.27 -2.21 -2.16 -2.05 -1.99 -1.84 -1.68 -1.46 -1.33 -1.20 -1.17 -169.14 -173.35 179.12 173.23 168.30 163.31 158.06 152.89 147.55 142.54 137.85 133.47 129.41 125.20 120.48 115.03 109.05 23.08 21.93 19.02 17.74 16.69 15.62 14.57 13.55 12.54 11.65 10.70 9.91 9.13 8.46 7.85 7.22 6.62 149.67 148.90 146.43 136.11 123.77 111.53 101.13 91.40 82.69 74.35 66.99 59.96 53.84 47.68 41.30 34.74 27.78 -30.46 -29.57 -27.97 -27.96 -27.96 -27.96 -26.02 -26.02 -26.02 -26.02 -25.08 -24.44 -24.44 -24.44 -23.27 -23.10 -23.10 17.14 14.05 9.40 10.86 10.86 10.62 9.88 8.87 7.57 5.95 4.22 2.37 0.24 -2.39 -5.53 -9.13 -12.86 -7.74 -7.80 -6.40 -6.33 -6.09 -5.86 -5.68 -5.58 -5.37 -5.20 -5.20 -5.05 -5.01 -4.89 -4.88 -4.73 -4.66 -128.38 -143.29 -169.43 -179.95 173.78 168.37 163.12 157.73 152.46 147.09 141.71 136.43 131.29 126.16 121.19 116.28 111.40 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning. Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 6 November 2006 AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH114-89PCB900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 900 MHz 19 dB -14 dB -10 dB Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C2 C=1000 pF size 0805 All passive components are of size 0603 unless otherwise noted. DIODE1 ID=D1 5.6 V RES ID=R1 R=2700 Ohm CAP ID=C4 C=56 pF PORT P=1 Z=50 Ohm +40 dBm (+11 dBm / tone, 1 MHz spacing) CAP ID=C3 C=100000 pF size 1206 Vcc = +5 V +24 dBm 5.0 dB +5 V 150 mA CAP ID=C1 C=56 pF IND ID=L1 L=33 nH RES ID=L2 R=0 Ohm CAP ID=C5 C=56 pF SUBCKT ID=U1 NET="AH114" CAP ID=C6 C=5.6 pF Measured parameters were taken at 25 C. PORT P=2 Z=50 Ohm CAP ID=C9 C=1.0 pF C6 should be placed at the silk screen marker "F" on the WJ evaluation board. C9 should be placed at the silk screen marker "8" on the WJ evaluation board. The capacitor should be placed 14° @ 0.9GHz from pin 1. The capacitor should be placed 19° @ 0.9GHz from pin 3. ACPR IS-95A vs. Channel Power Application Circuit: 900 MHz 20 IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset -40 15 freq = 0.9 GHz 5 DB(|S[1,1]|) * DB(|S[2,1]|) * ACPR (dBc) Magnitude (dB) 10 DB(|S[2,2]|) * 0 -5 -50 -60 -10 -15 -70 -20 13 0.7 0.8 0.9 Frequency (GHz) 1 14 15 16 17 18 1.1 Output Channel Power (dBm) 1900 MHz Application Circuit (AH114-89PCB1900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C3 C=100000 pF size 1206 CAP ID=C2 C=1000 pF size 0805 Vcc = +5 V 1900 MHz 14.5 dB -10 dB -14 dB All passive components are of size 0603 unless otherwise noted. DIODE1 ID=D1 5.6 V RES ID=R1 R=2700 Ohm CAP ID=C4 C=56 pF PORT P=1 Z=50 Ohm +41 dBm +23 dBm 5.0 dB +5 V 150 mA IND ID=L1 L=15 nH IND ID=L2 L=2.7 nH CAP ID=C5 C=56 pF SUBCKT ID=U1 NET="AH114" CAP ID=C7 C=2.4 pF Measured parameters were taken at 25 C. CAP ID=C1 C=56 pF PORT P=2 Z=50 Ohm CAP ID=C9 C=1.2 pF C7 should be placed at the silk screen marker "A" on the WJ evaluation board. C9 should be placed at the silk screen marker "7" on the WJ evaluation board. The capacitor should be placed 5° @ 1.9GHz from pin 1. The capacitor should be placed 34° @ 1.9GHz from pin 3. ACPR IS-95A vs. Channel Power IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset Application Circuit: 1900 MHz -40 20 freq = 1.9 GHz ACPR (dBc) 15 Magnitude (dB) 10 5 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * 0 -5 -50 -60 -10 -70 -15 13 -20 1.6 1.7 1.8 1.9 Frequency (GHz) 2 2.1 14 15 16 17 18 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 6 November 2006 AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH114-89PCB2140) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 2140 MHz 14 dB -25 dB -20 dB All passive components are of size 0603 unless otherwise noted. RES ID=R1 R=2700 Ohm Output P1dB Noise Figure Supply Voltage Supply Current DIODE1 ID=D1 CAP ID=C4 C=56 pF PORT P=1 Z=50 Ohm IND ID=L1 L=15 nH CAP ID=L2 C=1.5 pF +23 dBm 6.0 dB +5 V 150 mA CAP ID=C5 C=56 pF SUBCKT ID=U1 NET="AH114" CAP ID=C6 C=1.5 pF Measured parameters were taken at 25 C. CAP ID=C1 C=56 pF 5.6 V L2 should be placed 19.5° @ 2.14GHz from pin 1 of the AH114. +40 dBm (+11 dBm / tone, 1 MHz spacing) CAP ID=C3 C=100000 pF size 1206 CAP ID=C2 C=1000 pF size 0805 Vcc = +5 V PORT P=2 Z=50 Ohm CAP ID=C9 C=0.8 pF C6 should be placed at the silk screen marker "F" on the WJ evaluation board. C9 should be placed at the silk screen marker "6" on the WJ evaluation board. The capacitor should be placed 33° @ 2.14GHz from pin 1. The capacitor should be placed 39° @ 2.14GHz from pin 3. W-CDMA ACLR vs. Channel Power 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset -35 Application Circuit: 2140 MHz 15 freq = 2140 MHz -40 ACLR (dBc) 10 Magnitude (dB) 5 DB(|S[1,1]|) * 0 DB(|S[2,1]|) * DB(|S[2,2]|) * -5 -10 -45 -50 -55 -15 -60 -20 12 -25 1.9 2 2.1 Frequency (GHz) 2.2 13 2.3 14 15 16 Output Channel Power (dBm) 70 MHz Reference Design Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP C=1e7 pF Vcc = +5 V 70 MHz 23.4 dB -15 dB -14 dB CAP C=1000 pF CAP C=10 pF RES R=2700 Ohm PORT P=1 Z=50 Ohm +44.5 dBm IND L=56 nH CAP C=1000 pF +23.8 dBm 6.5 dB +5 V 150 mA IND L=33 nH RES R=3.9 Ohm CAP C=68 pF IND L=470 nH PORT P=2 Z=50 Ohm CAP C=1000 pF SUBCKT ID=U1 NET="AH114" Measured parameters were taken at 25 C. Measured Return Loss Measured Gain 0 26 DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|) Return Loss (dB) -5 Gain (dB) 24 22 -10 -15 -20 -25 20 40 50 60 70 Frequency (MHz) 80 90 100 40 50 60 70 Frequency (MHz) 80 90 100 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 6 November 2006 AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier 110 MHz Reference Design Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Output P1dB Noise Figure Supply Voltage Supply Current CAP C=1e7 pF Vcc = +5 V 110 MHz 21.9 dB -16 dB -12 dB CAP C=1000 pF CAP C=10 pF RES R=2700 Ohm +44 dBm PORT P=1 Z=50 Ohm +23.8 dBm 6.6 dB +5 V 150 mA CAP C=1000 pF IND L=33 nH IND L=18 nH RES R=3.9 Ohm CAP C=47 pF SUBCKT I D=U1 NET="AH114" IND L=470 nH PORT P=2 Z=50 Ohm CAP C=1000 pF Measured parameters were taken at 25 C. Measured Gain 24 DB(|S[2,1]|) Gain (dB) 22 20 18 80 90 100 110 120 Frequency (MHz) 130 140 Measured Return Loss 0 DB(|S[1,1]|) DB(|S[2,2]|) Return Loss (dB) -5 -10 -15 -20 -25 80 90 100 110 120 Frequency (MHz) 130 140 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 6 November 2006 AH114 The Communications Edge TM Product Information ¼ Watt, High Linearity InGaP HBT Amplifier AH114-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “AH114 G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tinlead package is marked with an “AH114” or “E009” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information Land Pattern ESD Rating: Class 1A Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 C 149 C / W 197 C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF vs. GND Tab Temperature 1000.0 MTTF (million hrs) Parameter 100.0 10.0 1.0 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 6 of 6 November 2006