AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier Product Features Product Description x 1800 – 2200 MHz Functional Diagram The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is housed in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. x 26 dB Gain x +30 dBm P1dB x +46 dBm Output IP3 x +5V Single Positive Supply x Internal Active Bias x Lead-free/green/RoHS-compliant The product is targeted for use as linear driver amplifier for various current and next generation wireless technologies SOIC-8 Package such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate directly off a +5 V supply. Applications x Mobile Infrastructure Units Min Typ Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure W-CDMA Channel Power MHz MHz dB dB dB dBm dBm dB dBm +21 Operating Current Range , Icc Device Voltage, Vcc mA V 400 5 @ -45 dBc ACLR 8 N/C Vbias1 2 7 Vcc2 / RF Out RF In 3 6 Vcc2 / RF Out 5 N/C Vbias2 4 AH212-S8G Function Vc1 Input Output Vbias1 Vbias2 Vcc2 GND N/C or GND Pin No. 1 3 6, 7 2 4 6, 7 Backside Paddle 5, 8 Typical Performance (1) Specifications (1) Parameters Vc1 1 1800 Max Parameters 2200 Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 IS-95A Channel Power MHz dB dB dB dBm dBm 1960 25.8 15 11 +30 +48.5 dBm +23.5 W-CDMA Channel Power dBm 2140 25 25 9 +29.5 +46 6.0 Units @ -45 dBc ACPR @ -45 dBc ACLR Noise Figure Supply Bias dB Typical 2140 25.0 25 9 +29.5 +46 +21 5.5 6.0 +5 V @ 400 mA 1. Test conditions unless otherwise noted: 25ºC, +5V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Ordering Information Rating -40 to +85 qC -65 to +150 qC +26 dBm +7 V 900 mA 6W +250 ºC Part No. Description AH212-S8G (lead-free/green/RoHS-compliant SOIC-8 Package) AH212-S8PCB1960 1960 MHz Evaluation Board AH212-S8PCB2140 2140 MHz Evaluation Board 1 Watt, High Gain InGaP HBT Amplifier Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 1 of 5 November 2005 AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier Typical Device Data S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, calibrated to device leads) 0.8 2. 0 2. 0 0.6 Swp Max 3GHz 6 0. 1.0 0.8 30 S22 Swp Max 3GHz 0. 4 DB(|S(2,1)|) AH212 1.0 S11 Gain 35 0. 4 0 3. 0 3. 0 4. 0 4. 5. 0 5. 0 0 .2 0 .2 15 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0 0.2 20 0.4 10 .0 -1 0. 0 -4 .0 -5 .0 -3 .0 .0 Swp Min 0.05GHz S(2,2) AH212 -2 S(1,1) AH212 .4 -0 Swp Min 0.05GHz -1.0 3 -0.8 2.55 -0 .6 2.05 .0 -2 1.55 Frequency (GHz) -1.0 1.05 -0.8 0.55 -0 .6 0.05 2 -3 .0 .4 -0 5 - 0. -4 .0 -5 .0 - 0.2 10 -10. 0 Gain (dB) 25 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a band specific tuned circuit, it is expected that actual gain will be higher. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increment. S-Parameters (VCC = +5 V, ICC = 400 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -9.19 -4.58 -0.92 -2.81 -4.10 -10.08 -14.20 -7.51 -6.58 -6.67 -7.87 -11.42 -18.51 -8.70 -4.43 -2.78 -2.44 -130.35 -125.96 -169.81 160.59 134.99 97.76 -174.16 146.36 101.88 65.24 37.31 19.84 69.85 105.38 93.47 84.89 81.11 17.61 21.86 27.39 26.96 26.35 30.19 31.30 29.49 27.14 25.02 23.35 22.01 20.56 18.40 15.61 12.91 10.51 65.80 69.36 14.98 -55.64 -69.83 -108.08 -167.40 141.86 99.61 63.05 28.87 -5.81 -44.21 -84.80 -122.39 -156.41 167.98 -64.44 -58.42 -55.39 -50.75 -49.90 -46.20 -49.63 -44.88 -45.19 -46.75 -47.96 -44.88 -40.54 -38.49 -38.94 -39.25 -38.27 122.93 -135.96 49.47 78.75 59.30 44.46 25.99 48.15 29.86 33.97 24.08 70.88 52.01 31.21 23.84 -2.01 0.70 -2.71 -2.92 -3.04 -1.13 -0.86 -0.93 -1.05 -1.97 -2.76 -2.82 -2.53 -2.08 -1.45 -1.02 -0.89 -1.16 -1.34 -145.39 -160.72 -166.12 -169.23 -179.36 172.84 164.98 159.52 156.95 154.08 150.05 143.86 134.91 123.57 113.66 106.71 101.38 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” FR4, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitor –C7. The markers and vias are spaced in 0.050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 2 of 5 November 2005 AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 1960 MHz Application Circuit (AH212-S8PCB1960) Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 Vcc = +5 V 1960 MHz 25.8 dB -15 dB -11 dB +30 dBm Channel Power +23.5 dBm (@-45 dBc ACPR, IS-95, 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current C AP ID=C9 C =47 p F IND ID=L1 L=18 nH RES ID=R2 R=0 O hm 5.5 dB +5 V 400 mA CAP ID=C2 C=47 pF CAP ID=C1 C=47 pF PORT P=1 Z=5 0 Ohm CAP ID=C10 C=1000 p F CAP ID=C6 C=1000 pF CAP ID=C5 C=1 000 p F +48.5 dBm (+15 dBm / tone, 1 MHz spacing) CAP ID=C11 C=4.7E6 pF SIZE 1210 IN D ID =L2 L=18 nH Size 0805 1 85 2 NET="AH212" 76 3 67 4 58 CA P ID=C8 C=47 p F RES ID=R3 R=75 Ohm All passive components are of size 0603 unless otherwise noted. CAP ID=C4 C=1000 pF PO RT P=2 Z=50 Ohm TLINP ID=TL1 Z0=50 Ohm L=125 m il Eeff=4.6 Lo ss=0 F0=0 M Hz RES ID=R1 R=10 Ohm CAP ID=C 7 C=2.7 pF C7 is placed bet ween silkscree n marke r "2" and "3 " on W J’s e val Board or @ 14 de gre es at 1.96G Hz away from pins 6 and 7. VBC = +5 V S21 vs. Frequency 28 S11 vs. Frequency 0 +25°C 25 23 1930 +25°C 1940 -40°C 1950 +85°C 1960 1970 1980 1990 -5 -10 -15 -20 -25 1930 -25 1930 1940 P1dBvs. Frequency OIP3 (dBm) P1dB (dBm) 50 1950 1960 1970 1980 45 40 +85°C 1990 Frequency(MHz) 40 35 1930 1940 45 40 35 -40 1990 -40 6 -45 5 4 35 17 18 -40°C +25°C -15 10 35 Temperature (°C) 60 85 ACPR vs. Channel Power 7 3 14 15 16 Output Power (dBm) 1980 ACPR (dBc) NF (dB) OIP3 (dBm) 50 13 1950 1960 1970 Frequency (MHz) Noise Figure vs. Frequency OIP3 vs. Output Power freq. = 1960 MHz, 1961 MHz, +25°C 55 1950 1960 1970 1980 1990 freq. = 1960 MHz, 1961 MHz, +15 dBm/tone 55 OIP3 (dBm) 1940 +25°C +85°C OIP3 vs. Temperature +25°C, +15 dBm/tone 45 28 -40°C 1940 -40°C Frequency (MHz) 50 29 12 1950 1960 1970 1980 1990 +25°C OIP3 vs. Frequency 55 30 27 -15 Frequency (MHz) Circuit boardsareoptimizedat 1960MHz 31 -10 -20 Frequency (MHz) 26 1930 +85°C S22 (dB) 26 24 -40°C -5 S11 (dB) S21 (dB) 27 S22 vs. Frequency 0 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz -50 -55 -60 -65 +85°C -40 C +25 C +85 C -70 2 1930 1940 1950 1960 1970 1980 18 1990 19 20 21 22 23 24 25 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 3 of 5 November 2005 AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier 2140 MHz Application Circuit (AH212-S8PCB2140) Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 2140 MHz 25 dB -25 dB -9 dB +29.5 dBm Vcc = + 5 V Channel Power Noise Figure Device / Supply Voltage Quiescent Current CAP ID=C9 C=47 p F IN D ID =L 1 L=18 nH RES ID=R2 R=0 Oh m C AP ID =C 2 C =47 pF CAP ID=C1 C=47 pF PORT P=1 Z=5 0 Ohm +21 dBm (@-45 dBc ACLR, W-CDMA, Test model 1 +64 DPCH, ± 5MHz offset) IND ID=L2 L=1 8 nH Size 0805 85 1 2 NET="AH 21 2" 7 6 3 6 7 4 6.0 dB +5 V 400 mA CAP ID =C 10 C=1000 pF CAP ID=C6 C=1000 p F CAP ID=C5 C=100 0 pF +46 dBm (+15 dBm / tone, 1 MHz spacing) CAP ID=C11 C=4.7 E6 pF SIZ E 1210 CAP ID=C4 C=1000 pF All passive components are of size 0603 unless otherwise noted. PORT P=2 Z=50 Ohm TLINP ID=TL 1 Z0=50 Oh m L=110 mi l Eeff=4.6 Loss=0 F0=0 MH z 58 RES ID=R1 R=1 0 Ohm RES ID=R3 R=75 Ohm CAP ID =C8 C=47 pF C AP ID=C 7 C =2 .4 p F C7 is placed at silkscreen marker "2" on WJ’s eval board or @ 12.2 deg at 2.14GHZ away fr om pins 6 and 7. VBC = +5 V S21 vs. Frequency 27 -15 -20 -25 +25°C 2120 -40°C 2130 2140 2150 2160 -35 2110 2170 2120 2130 2140 2150 2160 2170 Frequency (MHz) OIP3 (dBm) 50 45 40 35 2110 2120 2130 2140 2150 Frequency (MHz) 2160 35 -40 2170 Noise Figure vs. Frequency OIP3vs. Output Power freq. =2140MHz, 2141MHz, +25°C 55 6 5 4 13 14 15 16 Output Power (dBm) 17 18 60 85 ACLR vs. Channel Power ACLR (dBc) NF (dB) OIP3 (dBm) 40 10 35 Temperature (°C) -40 7 45 -15 3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz 8 50 2130 2140 2150 2160 2170 freq. = 2140 MHz, 2141 MHz, +15 dBm/tone 55 40 +85°C +85°C OIP3 vs. Temperature +25°C, +15 dBm/tone 45 27 2120 2120 -40°C Frequency (MHz) OIP3 (dBm) P1dB (dBm) 2130 2140 2150 2160 2170 50 28 +25°C +25°C -25 2110 OIP3 vs. Frequency 55 29 -40°C -15 Frequency (MHz) P1dB vs. Frequency 26 -10 -20 -30 +85°C Circuit boards are optimized at 2140 MHz 30 35 12 +85°C -5 Frequency (MHz) 25 2110 -40°C S22 (dB) S11 (dB) S21 (dB) 24 S22 vs. Frequency 0 -10 25 22 2110 +25°C -5 26 23 S11 vs. Frequency 0 -40°C +25°C -45 -50 -55 +85°C -40 C -60 3 2110 2120 2130 2140 2150 2160 18 2170 19 20 +25 C 21 +85 C 22 Output Channel Power (dBm) Frequency (MHz) Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 4 of 5 November 2005 AH212 The Communications Edge TM Product Information 1 Watt High Linearity, High Gain InGaP HBT Amplifier AH212-S8G (Lead-Free SOIC-8 Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260qC reflow temperature) and lead (maximum 245qC reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH212G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tjc -40 to +85q C 33 q C / W 156 q C Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage and the current applied. It can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 400 mA at an 85 C case temperature. Specifications and information are subject to change without notice. WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com Page 5 of 5 November 2005