SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • • • • Ultra Low Forward Voltage Drop Soft Reverse Recovery at Low and High Temperature Low Power Loss, High Efficiency Very High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 msec, sine pulse TJ = 25 °C, IAS = 3.7 A L = 6.5 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR - Max. 20 120 Units V A 1650 A 44.5 mJ 3.7 A -55 to + 150 -55 to + 150 °C °C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 VF3 IR1 IR2 IR3 Max. Junction Capacitance CT Condition @ 120A, Pulse, TJ = 25 °C @ 120A, Pulse, TJ = 125 °C @ 120A, Pulse, TJ = 150 °C @VR = 30V, Pulse, TJ = 25 °C @VR = 30V, Pulse, TJ = 125 °C @VR = 5V, Pulse, TJ = 100 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, ISIG = 50mV (p-p) Typ. 0.42 0.30 0.27 2.7 Max. 0.48 0.35 0.32 20.0 Units V V V mA 2240 3000 mA 100 180 mA 6684 8100 pF (1) in SHD package • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] • SD275SE30A/B/C SENSITRON TECHNICAL DATA DATA SHEET 4142, Rev A Typical Forward Characteristics Typical Reverse Characteristics (mA) 10 4 Instantaneous Reverse Current - I R 150 °C 150 °C (A) 102 100 °C 125 °C 100 °C 10 2 75 °C 10 1 50 °C 25 °C 10 0 10 -1 0 25 °C 101 5 10 15 20 Reverse Voltage - VR (V) 25 30 Typical Junction Capacitance 100 0.0 0.2 0.4 Forward Voltage Drop - V F (V) 0.6 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F 125 °C 10 3 9000 8000 7000 25 °C 6000 5000 4000 3000 0 5 10 15 20 25 Reverse Voltage - VR (V) 30 35 • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - [email protected] • SD275SE30A/B/C SENSITRON TECHNICAL DATA DATA SHEET 4142, Rev A Mechanical Dimensions: In Inches / mm D H B A Schottky Chip h Moly Attached Schottky Die Figure 1 Figure 2 Top side(Anode) metallization: A = Al - 25 kÅ minimum, Figure 1 B = Ag - 30 kÅ minimum, Figure 1 C = Au - 12 kÅ min, Figure 2 Bottom side (Cathode) metallization: A, B, C = Ti/Ni/Ag - 30 kÅ minimum. A 0.275±0.003 B 0.267±0.003 D 0.220±0.005 H 0.0155±0.001 h 0.011±0.002 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). 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