SHD126245 SHD126245D SHD126245N SHD126245P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4781, REV. A Applications: SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175C Operating Temperature Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Junction Temperature Max. Storage Temperature Thermal Resistance Symbol VRWM IF(AV) IF(AV) IFSM TJ Tstg R JC Condition 50% duty cycle, rectangular wave form (Single/Doubler) 50% duty cycle, rectangular wave form (Common Cathode/ Common Anode) 8.3 ms, half Sine wave - Max. Units 150 15 V A 16 A 280 A -65 to +175 -65 to +175 1.45 C C C/W Max. 0.97 0.81 0.5 Units V V mA 8 mA 500 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 16A, Pulse, TJ = 25 C @ 16A, Pulse, TJ = 125 C @VR = 150V, Pulse, TJ = 25 C @VR = 150V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-Mail Address - [email protected] SHD126245 SHD126245D SHD126245N SHD126245P TECHNICAL DATA DATA SHEET 4781, REV. A Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) 1 2 .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 DEVICE TYPE SINGLE RECTIFIER COMMON CATHODE (P) COMMON ANODE (N) DOUBLER (D) PIN 1 PIN 2 CATHODE ANODE 1 CATHODE 1 ANODE ANODE COMMON CATHODE COMMON ANODE CATHODE / ANODE 101 150 °C 125 °C 100 102 150 °C 1 125 °C 10 100 °C 100 75 °C 10-1 50 °C 10-2 25 °C 10-3 0 25 °C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics Instantaneous Reverse Current - IR (mA) Typical Forward Characteristics PIN 3 10-1 0.0 0.2 0.4 0.6 Forward Voltage Drop - VF (V) 0.8 10 20 30 40 50 Reverse Voltage - VR (V) 60 Typical Junction Capacitance 800 700 600 500 400 300 200 0 10 20 30 40 50 Reverse Voltage - VR (V) 60 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-Mail Address - [email protected] SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected] •