RN141TG PIN DIODE FEATURES • High Frequency Switching • Ultra Small mold type (EMD2) • High Frequency Resistance is Very Small • Silicon Epitaxial Planer • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOD-723, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Polarity: See Diagram Below Approx.Weight : 0.00077 gram Marking : BL ABSOLUTE MAXIMUM RATINGS ( TA = 25OC ) SYMBOL LIMITS UNITS Reverse Voltage (repetitive peak) VR 50 V Forward Current IF 100 mA TJ,TSTG -55 to 150 PARAMETER Operating Junction and Storage Temperature Range O C ELECTRICAL CHARACTERISTICS ( TA = 25OC ) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Forward Voltage V F1 I F = 10mA - - 1.0 V Reverse Current I R1 V R = 50V - - 0.1 µA Capacitance Between Terminals Ct VR = 1.0V,f=1MHz - - 0.8 pF Foreard Resistance Rf IF=3mA,f=100MHz - - 2 Ω STAD-MAY.21.2007 PAGE . 1 RN141TG zElectrical characteristic curves 100 Ta=150℃ 10 Ta=125℃ 10 f=1MH Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.1 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=150℃ Ta=75℃ 0.1 Ta=25℃ 0.01 Ta=-25℃ 0.001 0.0001 0 100 200 300 400 500 600 700 800 900 1000 1100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0.1 0.01 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 50 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 FORWARD OPERATING RESISTANCE:rf(Ω) 100 f=1MHz 10 f=10MHz 1 f=100MHz 0.1 0.1 STAD-MAY.21.2007 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 10 PAGE . 2 RN141TG MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 8K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-APR.26.2007 PAGE . 3