DATA SHEET BAS21A/C/S SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES VOLTAGE 250 Volts POWER SOT- 23 250mWatts Unit: inch (mm) FEATURES • High reverse bearkdown voltage. .103(2.60) • Galvanically isolated dual configurations to save board space. .086(2.20) .056(1.40) • Surface mount package ideally suited for automatic insertion. .047(1.20) • Low reverse leakage current. .007(.20)MIN .119(3.00) .110(2.80) • Fast switching speed. • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb .083(2.10) .066(1.70) .006(.15) .002(.05) .044(1.10) MECHANICAL DATA .006(.15)MAX .020(.50) .013(.35) Case: SOT-23, Plastic .035(0.90) Pb free: 98.5% Sn above Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram Marking : BAS21A:21A, BAS21C:21C, BAS21S:21S ABSOLUTE RATINGS PA RA M E TE R M a xi m um R e ve r s e V o l t a g e P e a k R e ve r s e V o l t a g e A v e r a g e R e c t i f i e d C u r r e n t a t Te m p = 2 5 O C N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 s S ym b o l Va l ue U ni t s VR 250 V V RRM 250 V 0 .2 A 2 .5 A I O IF S M THERMAL CHARACTERISTICS PA RA ME TE R S ym b o l Va lue Uni ts P o we r D i s s i p a ti o n P TOT 250 mW The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt R θJ A 357 J u n c t i o n Te m p e r a t u r e TJ 150 O C S t o r a g e Te m p e r a t u r e T S TG -55 to 150 O C COMMON ANODE BAS21A STAD-JUL.13.2004 COMMON CATHODE BAS21C O C /W SERIES BAS21S PAGE . 1 ELECTRICAL CHARACTERISTICS PARAMETER Symbol Reverse Breakdown Voltage V(BR) Test Condition MIN. TYP. MAX. Units IR=100 uA -- -- 250 V Reverse Current IR VR=200 V VR=200 V, TJ = 150OC -- -- 0.1 100 uA Forward Voltage VF IF=1.0mA IF=100mA -- -- 0.70 1.00 V Maximum Junction Capacitance CJ VR=0V, f=1.0MHZ -- -- 5.0 pF Reverse Recovery Time Trr IF=IR=30mA, RL=100Ω -- -- 50 ns ELECTRICAL CHARACTERISTICS CURVES 100 100 I R , LEAKAGE CURRENT, uA FORWARD CURRENT, mA 1000 TJ =25OC 10 1.0 0.1 0.01 0 1.0 10 1.0 0.1 0.01 2.0 FORWARD VOLTAGE, VOLTS Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATURE P D , POWER DISSIPATION (mW) DIODE CAPACITANCE, pF 4.5 3.0 1.5 2 4 6 REVERSE VOLTAGE, VOLTS FIG. 3 TYPICAL JUNCTION CAPACITANCE STAD-JUL.13.2004 200 O 6.0 0 100 T J , JUNCTION TEMPERATURE, C FIG. 1-TYPICAL FORWARD CHARACTERISTIC 0 0 8 500 400 300 200 100 0 50 100 150 200 AMBIENT TEMPERATURE( OC) FIG. 4 POWER DERATING CURVE PAGE . 2 MOUNTING PAD LAYOUT Unit: inch (mm) 0.078(2.0) 0.035(0.9) SOT-23 0.031(0.8) 0.037(0.95) ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3.0K per 7" plastic Reel LEGAL STATEMENT IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. The information will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and product characterization are constantly in process. Therefore, the factory should be consulted for the most recent information and for any special characteristics not described or specified. Copyright Pan Jit International Inc. 2003 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract. The information presented is believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. STAD-JUL.13.2004 PAGE . 3